| Nr. | Teilname | Beschreibung | Hersteller |
| 47881 | 2N5681 | TRANSISTOREN DES SILIKON-NPN | ST Microelectronics |
| 47882 | 2N5681 | NPN Transistor | Microsemi |
| 47883 | 2N5681 | TRANSISTOREN DES SILIKON-NPN | SGS Thomson Microelectronics |
| 47884 | 2N5681 | TRANSISTOREN DES SILIKON-NPN | SGS Thomson Microelectronics |
| 47885 | 2N5681 | PNP/NPN HOCHSPANNUNGSSILIKON-TRANSISTOREN | Boca Semiconductor Corporation |
| 47886 | 2N5681 | NPN SILIKON-TRANSISTOREN | SemeLAB |
| 47887 | 2N5681 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47888 | 2N5681 | 10.000W High Voltage NPN Metall kann der Transistor. 100V Vceo, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47889 | 2N5681 | 1,0 Amp 10 Watt NPN-PNP komplementären Macht. | Fairchild Semiconductor |
| 47890 | 2N5681SMD | 100v Vce, IC 1A, 30MHz NPN-Bipolartransistor | SemeLAB |
| 47891 | 2N5682 | TRANSISTOREN DES SILIKON-NPN | ST Microelectronics |
| 47892 | 2N5682 | NPN Transistor | Microsemi |
| 47893 | 2N5682 | TRANSISTOREN DES SILIKON-NPN | SGS Thomson Microelectronics |
| 47894 | 2N5682 | TRANSISTOREN DES SILIKON-NPN | SGS Thomson Microelectronics |
| 47895 | 2N5682 | PNP/NPN HOCHSPANNUNGSSILIKON-TRANSISTOREN | Boca Semiconductor Corporation |
| 47896 | 2N5682 | NPN SILIKON-TRANSISTOREN | SemeLAB |
| 47897 | 2N5682 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47898 | 2N5682 | 10.000W High Voltage NPN Metall kann der Transistor. 120V Vceo, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47899 | 2N5682 | 1,0 Amp 10 Watt NPN-PNP komplementären Macht. | Fairchild Semiconductor |
| 47900 | 2N5683 | PNP Transistor | Microsemi |
| 47901 | 2N5683 | ENERGIE TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47902 | 2N5684 | PNP Transistor | Microsemi |
| 47903 | 2N5684 | ENERGIE TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47904 | 2N5684 | Energie 50A 80V Getrenntes PNP | ON Semiconductor |
| 47905 | 2N5684-D | Hoch-Gegenwärtige Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 47906 | 2N5685 | NPN Transistor | Microsemi |
| 47907 | 2N5685 | ENERGIE TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47908 | 2N5686 | NPN Transistor | Microsemi |
| 47909 | 2N5686 | ENERGIE TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47910 | 2N5686 | Energie 50A 80V Getrenntes NPN | ON Semiconductor |
| 47911 | 2N5743 | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto66 | SemeLAB |
| 47912 | 2N5743 | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto66 | SemeLAB |
| 47913 | 2N5745 | PNP Transistor | Microsemi |
| 47914 | 2N5745 | ENERGIE TRANSISTORS(200W) | MOSPEC Semiconductor |
| 47915 | 2N5745 | TRANSISTOREN DES PNP SILIKON-HIGH-POWER | Boca Semiconductor Corporation |
| 47916 | 2N5745 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47917 | 2N5754 | 2,5-A Silizium Triac. Spannung (typ) 100 V. | General Electric Solid State |
| 47918 | 2N5755 | 2,5-A Silizium Triac. Spannung (typ) 200 V. | General Electric Solid State |
| 47919 | 2N5756 | 2,5-A Silizium Triac. Spannung (typ) 400 V. | General Electric Solid State |
| 47920 | 2N5757 | 2,5-A Silizium Triac. Spannung (typ) 600 V. | General Electric Solid State |
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