| 36511 | NTHS5404T1-D | Energie Mosfet N-Führung ChipFET 5.2 Ampere, 20 Volt | ON Semiconductor |
| 36512 | NTHS5404T1G | Energie Mosfet 20V, 5.2A, N-Führung ChipFET™ | ON Semiconductor |
| 36513 | NTHS5404T1G | Energie Mosfet 20V, 5.2A, N-Führung ChipFET™ | ON Semiconductor |
| 36514 | NTHS5441 | −20 V, −5.3 A, P−Channel ChipFET | ON Semiconductor |
| 36515 | NTHS5441T1 | Energie Mosfet P-Führung ChipFET™ -3.9 A, -20 V | ON Semiconductor |
| 36516 | NTHS5441T1 | Energie Mosfet P-Führung ChipFET™ -3.9 A, -20 V | ON Semiconductor |
| 36517 | NTHS5441T1-D | Energie Mosfet P-Führung ChipFET 3.9 Ampere, 20 Volt | ON Semiconductor |
| 36518 | NTHS5441T1G | Energie Mosfet P-Führung ChipFET™ -3.9 A, -20 V | ON Semiconductor |
| 36519 | NTHS5441T1G | Energie Mosfet P-Führung ChipFET™ -3.9 A, -20 V | ON Semiconductor |
| 36520 | NTHS5443 | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36521 | NTHS5443 | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36522 | NTHS5443T1 | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36523 | NTHS5443T1 | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36524 | NTHS5443T1-D | Energie Mosfet P-Führung ChipFET 3.6 Ampere, 20 Volt | ON Semiconductor |
| 36525 | NTHS5443T1G | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36526 | NTHS5443T1G | Energie Mosfet 20V, 3.6A, P-Führung ChipFET™ | ON Semiconductor |
| 36527 | NTHS5445 | Energie Mosfet 8 V, 5.2 A, P-Führung ChipFET™ | ON Semiconductor |
| 36528 | NTHS5445 | Energie Mosfet 8 V, 5.2 A, P-Führung ChipFET™ | ON Semiconductor |
| 36529 | NTHS5445T1 | VERALTET - Power MOSFET P-Kanal ChipFET ™ | ON Semiconductor |
| 36530 | NTHS5445T1-D | Energie Mosfet P-Führung ChipFET 5.2 Ampere, 8 Volt | ON Semiconductor |
| 36531 | NTJD1155L | Power MOSFET 8 V, ± 1,3 A, High-Side-Lastschalter mit Niveau-Shift P-Kanal-, SC-88 | ON Semiconductor |
| 36532 | NTJD2152P | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36533 | NTJD2152PT1 | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36534 | NTJD2152PT1G | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36535 | NTJD2152PT2 | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36536 | NTJD2152PT2G | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36537 | NTJD2152PT4 | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36538 | NTJD2152PT4G | Graben-Verdoppeln Kleiner Signal Mosfet 8 V P-Führung, ESD Schutz | ON Semiconductor |
| 36539 | NTJD3158C | Ergänzende Power MOSFETs | ON Semiconductor |
| 36540 | NTJD4001N | Kleiner Signal MOSFET 30 V, 250 MA, Doppeln - Führung, Sc - 88 | ON Semiconductor |
| 36541 | NTJD4001NT1 | Kleiner Signal MOSFET 30 V, 250 MA, Doppeln - Führung, Sc - 88 | ON Semiconductor |
| 36542 | NTJD4001NT1G | Kleiner Signal MOSFET 30 V, 250 MA, Doppeln - Führung, Sc - 88 | ON Semiconductor |
| 36543 | NTJD4105C | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36544 | NTJD4105CT1 | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36545 | NTJD4105CT1G | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36546 | NTJD4105CT2 | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36547 | NTJD4105CT2G | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36548 | NTJD4105CT4 | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36549 | NTJD4105CT4G | Kleiner Signal Mosfet 20V/-8V, Höfliches +0.63A/-0.775A SC-88 | ON Semiconductor |
| 36550 | NTJD4152P | Kleinsignal-MOSFET, 20 V, 0.88 A, Dual-P-Kanal, mit ESD-Schutz | ON Semiconductor |
| 36551 | NTJD4158C | Kleinsignal-MOSFET 30 V / -20 V, + 0,25 / -0,88 A, Komplementär, SC-88 | ON Semiconductor |
| 36552 | NTJD4401N | Kleinsignal-MOSFET 20 V Dual N-Channel, SC-88 ESD-Schutz | ON Semiconductor |
| 36553 | NTJD5121N | NTJD5121N Datenblatt | ON Semiconductor |
| 36554 | NTJS3151P | Trench Power MOSFET 12 V, 3,3 A, Single P-Kanal-ESD-Schutz SC-88 | ON Semiconductor |
| 36555 | NTJS3157N | Trench Power MOSFET, 20 V, 4,0 A, Single N-Kanal | ON Semiconductor |
| 36556 | NTJS4151P | Trench Power MOSFET -20 V, -4,2 A, Single P-Kanal-, SC-88 | ON Semiconductor |
| 36557 | NTJS4160N | Power MOSFET 30 V, 3,2 A, Single N-Channel-SC-88 | ON Semiconductor |
| 36558 | NTJS4405N | Kleinsignal-MOSFET 25 V, 1,2 A Single N-Channel-SC-88 | ON Semiconductor |
| 36559 | NTK3043N | Power MOSFET 20 V, 285 mA N-Kanal mit ESD-Schutz, SOT-723 | ON Semiconductor |
| 36560 | NTK3134N | Power MOSFET, 20 V, 890 mA, Single N-Channel, SOT-723-Paket, mit ESD-Schutz | ON Semiconductor |
| 36561 | NTK3139P | Power MOSFET 20 V, 780 mA, Single P-Kanal | ON Semiconductor |
| 36562 | NTK3142P | Kleines Signal Power MOSFET -20 V, -280 mA, P-Kanal mit ESD-Schutz, SOT-723 | ON Semiconductor |
| 36563 | NTL4502N | Energie Mosfet 24V N-Führung Viererkabel PInPAK | ON Semiconductor |
| 36564 | NTL4502NT1 | Energie Mosfet 24V N-Führung Viererkabel PInPAK | ON Semiconductor |
| 36565 | NTLGD3502N | Power MOSFET, 20 V-, Dual N-Channel | ON Semiconductor |
| 36566 | NTLGF3402P | Power MOSFET und Schottky Diode, -20 V, -3,9 A, P-Kanal | ON Semiconductor |
| 36567 | NTLJD2104P | Power MOSFET, 12V, 4.3A, 90mOhm Dual-Channel-P WDFN2x2 | ON Semiconductor |
| 36568 | NTLJD2105L | Power MOSFET, 8 V, 4,3 A, µCool ™ High-Side-Lastschalter mit Level Shift | ON Semiconductor |
| 36569 | NTLJD3115P | Power MOSFET -20 V, -4,1 A, µCool ¿Dual-P-Kanal, 2x2 mm WDFN Paket | ON Semiconductor |
| 36570 | NTLJD3119C | Power MOSFET µCool ¿20 V, 4,6 A | ON Semiconductor |
| 36571 | NTLJD3181PZ | Power MOSFET, -20 V, -4,0 A, UCOOL ™, Dual-P-Kanal, ESD, 2x2 mm WDFN Paket | ON Semiconductor |
| 36572 | NTLJD3182FZ | Power MOSFET und Schottky Diode, -20 V, -4,0 A, UCOOL ¿, Single P-Kanal-und Schottky-Diode, ESD | ON Semiconductor |
| 36573 | NTLJD3183CZ | Power MOSFET, 20 V/-20 V, 4,7 A A/-4.0, UCOOL ¿, Komplementär, 2x2 mm, WDFN Paket | ON Semiconductor |
| 36574 | NTLJD4116N | Power MOSFET, 30 V, 4,6 A, Dual-N-Channel | ON Semiconductor |
| 36575 | NTLJD4150P | Power MOSFET 30 V, 3,4 A, µCool ™ Dual-P-Kanal | ON Semiconductor |
| 36576 | NTLJF1103P | Power MOSFET und Schottky Diode -8 V, -4,3 A, µCool ¿P-Channel, mit 2,0 A Schottky-Diode, 2 x 2 mm, WDFN | ON Semiconductor |
| 36577 | NTLJF3117P | Power MOSFET und Schottky Diode, -20 V, -4,1 A, P-Kanal | ON Semiconductor |
| 36578 | NTLJF3118N | Power MOSFET und Schottky-Diode 20 V, 4,6 A, µCool ™ N-Channel, mit 2,0 A Schottky-Barrier Diode | ON Semiconductor |
| 36579 | NTLJF4156N | Power MOSFET und Schottky-Diode, 30 V, 4,6 A, N-Channel | ON Semiconductor |
| 36580 | NTLJS1102P | Power MOSFET 8V 8.1a 36 mOhm Single P-Kanal-WDFN2x2 | ON Semiconductor |
| 36581 | NTLJS2103P | NTLJS2103P | ON Semiconductor |
| 36582 | NTLJS3113P | Power MOSFET -20 V, -9,5 A, µCool ¿Single P-Kanal | ON Semiconductor |
| 36583 | NTLJS3A18PZ | Power MOSFET, -20 V, -8,2 A, UCOOL, Single P-Kanal, 2.0x2.0x0.8 mm WDFN Paket | ON Semiconductor |
| 36584 | NTLJS4114N | Power MOSFET, 30 V, 7,8 A, Single N-Kanal | ON Semiconductor |
| 36585 | NTLJS4149 | NTLJS4149P µCool ™ | ON Semiconductor |
| 36586 | NTLJS4159N | Power MOSFET 30 V, 7,8 A, µCool ™ Single N-Channel | ON Semiconductor |
| 36587 | NTLLD4901NF | Power MOSFET und integrierte Schottky Diode, 30 V, Dual-N-Channel | ON Semiconductor |
| 36588 | NTLMS4501N | Energie Mosfet 30 V, 14.7 A, N-Führung, SO-8 Leadless Paket | ON Semiconductor |
| 36589 | NTLMS4507N | Energie Mosfet 30 V, 24 A, N-Führung, SO-8 Leadless Paket | ON Semiconductor |
| 36590 | NTLTD7900N | Power MOSFET 8,5 A, 20 V Logik-Niveau N-Channel Micro8 ™ Leadless | ON Semiconductor |
| 36591 | NTLTD7900Z | 9A, 20V, 26mOhm, Zener Gatter-Schutz, 4000V HBM | ON Semiconductor |
| 36592 | NTLTD7900Z-D | Energie Mosfet 9 Ampere, 20 Volt, Logik Waagerecht ausgerichtete N-Führung Micro-8 Leadless | ON Semiconductor |
| 36593 | NTLTD7900ZR2 | 9A, 20V, 26mOhm, Zener Gatter-Schutz, 4000V HBM | ON Semiconductor |
| 36594 | NTLTS3107P | Power MOSFET -20 V, -8,3 A, Single P-Kanal-Micro-8 Leadless Package | ON Semiconductor |
| 36595 | NTLUD3191PZ | Dual-P-Kanal-MOSFET 20 V | ON Semiconductor |
| 36596 | NTLUD3A260PZ | Single P-Kanal-MOSFET 20 V | ON Semiconductor |
| 36597 | NTLUD3A50PZ | Power MOSFET, Dual-P-Kanal, -20 V, -5,6 A, 2.0x2.0x0.55 mm UDFN Paket | ON Semiconductor |
| 36598 | NTLUF4189NZ | Single N-Kanal-MOSFET-Plus 30 V-Schottky-Barrier Diode | ON Semiconductor |
| 36599 | NTLUS3192PZ | Single P-Kanal-MOSFET 20 V | ON Semiconductor |
| 36600 | NTLUS3A18PZ | Power MOSFET, -20 V, -8,2 A, Single P-Kanal-, ESD, 2.0x2.0x0.55 mm, UCOOL, UDFN Paket | ON Semiconductor |
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