| Nr. | Nome da parte | Descrição | Fabricante |
| 249841 | BC308BU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249842 | BC308C | Amplificador Transistors(PNP) | Motorola |
| 249843 | BC308C | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249844 | BC308C | Silicone De Transistors(PNP Do Amplificador) | ON Semiconductor |
| 249845 | BC308CBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249846 | BC308TA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249847 | BC308TAR | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249848 | BC309 | Aplicações do switching e do amplificador | Fairchild Semiconductor |
| 249849 | BC309 | Transistor Da Finalidade Geral | Korea Electronics (KEC) |
| 249850 | BC309 | Mocy de Tranzystor ma.ej cz?otliwo.ci ma.ej | Ultra CEMI |
| 249851 | BC309 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
| 249852 | BC309 | Transistor. Aplicações de comutação e amplificador. Tensão coletor-base de Vcbo = -30V. Tensão coletor-emissor VCEO = -25V. Tensão emissor-base Vebo = 5V. Dissipação Collector Pc (max) = 500mW. Coletor de corrente Ic = -100mA. | USHA India LTD |
| 249853 | BC309A | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
| 249854 | BC309A | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
| 249855 | BC309A | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 120-220 hFE | Continental Device India Limited |
| 249856 | BC309ABU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249857 | BC309ATA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249858 | BC309B | Amplificador Transistors(PNP) | Motorola |
| 249859 | BC309B | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 200-460 hFE | Continental Device India Limited |
| 249860 | BC309BBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249861 | BC309BTA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249862 | BC309C | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
| 249863 | BC309C | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
| 249864 | BC309C | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 420-800 hFE | Continental Device India Limited |
| 249865 | BC309CBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 249866 | BC313 | Mocy krzemowy do redniej de Tranzystor, ma.ej cz?otliwo.ci | Ultra CEMI |
| 249867 | BC313 | Mocy de Tranzystor ma.ej cz?otliwo.ci ma.ej | Ultra CEMI |
| 249868 | BC317 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
| 249869 | BC317 | 0.350W Uso Geral NPN plástico com chumbo Transistor. 45V VCEO, 0.150A Ic, 110-450 hFE | Continental Device India Limited |
| 249870 | BC317A | 0.350W Uso Geral NPN plástico com chumbo Transistor. 45V VCEO, 0.150A Ic, 110-220 hFE | Continental Device India Limited |
| 249871 | BC317B | 0.350W Uso Geral NPN plástico com chumbo Transistor. VCEO 45V, 0.150A Ic, 200-450 hFE | Continental Device India Limited |
| 249872 | BC318 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
| 249873 | BC319 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
| 249874 | BC320 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
| 249875 | BC3200 | Retificadores Da Silicone-Ponte | Diotec Elektronische |
| 249876 | BC321 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
| 249877 | BC322 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
| 249878 | BC327 | Transistor da finalidade geral de PNP | Philips |
| 249879 | BC327 | Aplicações do switching e do amplificador | Fairchild Semiconductor |
| 249880 | BC327 | Transistor Da Finalidade Geral | Korea Electronics (KEC) |
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