| Nr. | Nome da parte | Descrição | Fabricante |
| 47881 | 2N5681 | TRANSISTOR DO SILICONE NPN | ST Microelectronics |
| 47882 | 2N5681 | Transistor de NPN | Microsemi |
| 47883 | 2N5681 | TRANSISTOR DO SILICONE NPN | SGS Thomson Microelectronics |
| 47884 | 2N5681 | TRANSISTOR DO SILICONE NPN | SGS Thomson Microelectronics |
| 47885 | 2N5681 | TRANSISTOR DE ALTA TENSÃO DO SILICONE DE PNP/NPN | Boca Semiconductor Corporation |
| 47886 | 2N5681 | TRANSISTOR DO SILICONE DE NPN | SemeLAB |
| 47887 | 2N5681 | Finalidade Geral Do Transistor Pequeno Leaded Do Sinal | Central Semiconductor |
| 47888 | 2N5681 | 10.000W High Voltage NPN metal pode transistor. 100V VCEO, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47889 | 2N5681 | 1.0 Amp 10 watts NPN-PNP poder complementar. | Fairchild Semiconductor |
| 47890 | 2N5681SMD | 100v Vce, IC 1A, 30MHz NPN transistor bipolar | SemeLAB |
| 47891 | 2N5682 | TRANSISTOR DO SILICONE NPN | ST Microelectronics |
| 47892 | 2N5682 | Transistor de NPN | Microsemi |
| 47893 | 2N5682 | TRANSISTOR DO SILICONE NPN | SGS Thomson Microelectronics |
| 47894 | 2N5682 | TRANSISTOR DO SILICONE NPN | SGS Thomson Microelectronics |
| 47895 | 2N5682 | TRANSISTOR DE ALTA TENSÃO DO SILICONE DE PNP/NPN | Boca Semiconductor Corporation |
| 47896 | 2N5682 | TRANSISTOR DO SILICONE DE NPN | SemeLAB |
| 47897 | 2N5682 | Finalidade Geral Do Transistor Pequeno Leaded Do Sinal | Central Semiconductor |
| 47898 | 2N5682 | 10.000W High Voltage NPN metal pode transistor. 120V VCEO, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47899 | 2N5682 | 1.0 Amp 10 watts NPN-PNP poder complementar. | Fairchild Semiconductor |
| 47900 | 2N5683 | Transistor de PNP | Microsemi |
| 47901 | 2N5683 | PODER TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47902 | 2N5684 | Transistor de PNP | Microsemi |
| 47903 | 2N5684 | PODER TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47904 | 2N5684 | Poder 50A 80V PNP Discreto | ON Semiconductor |
| 47905 | 2N5684-D | Transistor De Poder Complementares Elevado-Atuais Do Silicone | ON Semiconductor |
| 47906 | 2N5685 | Transistor de NPN | Microsemi |
| 47907 | 2N5685 | PODER TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47908 | 2N5686 | Transistor de NPN | Microsemi |
| 47909 | 2N5686 | PODER TRANSISTORS(50A, 300w) | MOSPEC Semiconductor |
| 47910 | 2N5686 | Poder 50A 80V NPN Discreto | ON Semiconductor |
| 47911 | 2N5743 | Dispositivo bipolar de PNP em um pacote hermetically selado do metal TO66 | SemeLAB |
| 47912 | 2N5743 | Dispositivo bipolar de PNP em um pacote hermetically selado do metal TO66 | SemeLAB |
| 47913 | 2N5745 | Transistor de PNP | Microsemi |
| 47914 | 2N5745 | PODER TRANSISTORS(200W) | MOSPEC Semiconductor |
| 47915 | 2N5745 | TRANSISTOR DO SILICONE HIGH-POWER DE PNP | Boca Semiconductor Corporation |
| 47916 | 2N5745 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 47917 | 2N5754 | 2.5-A triac silício. Tensão (típico) 100 V. | General Electric Solid State |
| 47918 | 2N5755 | 2.5-A triac silício. Tensão (típico) 200 V. | General Electric Solid State |
| 47919 | 2N5756 | 2.5-A triac silício. Tensão (típico) 400 V. | General Electric Solid State |
| 47920 | 2N5757 | 2.5-A triac silício. Tensão (típico) 600 V. | General Electric Solid State |
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