| Nr. | Nome da parte | Descrição | Fabricante |
| 49521 | 2N7002 | TRANSISTOR DE EFEITO DE CAMPO DA MODALIDADE DO REALCE DE N-CHANNEL | Panjit International Inc |
| 49522 | 2N7002 | Transistor De Efeito De Campo Da Modalidade Do Realce Da N-Canaleta | Chino-Excel Technology |
| 49523 | 2N7002 | FETs Verticais Da Realce-Modalidade DMOS Da N-Canaleta | Supertex Inc |
| 49524 | 2N7002 | N-CHANNEL 60V - 1.8 Ohm - 0.35A SOT23-3L - Mosfet de TO-92™STripFET II | ST Microelectronics |
| 49525 | 2N7002 | 60 V, 300 mA N-channel MOSFET Trench | NXP Semiconductors |
| 49526 | 2N7002 | N-canal de transístor. Escorra-sourse tensão de 60 V. | Comchip Technology |
| 49527 | 2N7002 | 0.2W de potência MOSFET, Vdss 60V, 0.115A Id, 7.5Om Rds | SemiWell Semiconductor |
| 49528 | 2N7002(Z) | 60V SOT23 N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49529 | 2N7002-01 | TRANSISTOR DE EFEITO DE CAMPO DA MODALIDADE DO REALCE DE N-CHANNEL | Diodes |
| 49530 | 2N7002-13-F | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49531 | 2N7002-7-02 | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49532 | 2N7002-7-F | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49533 | 2N7002-G | MOSFET, V DS = 60V, I D = 0.25A, P D = 350mW | Comchip Technology |
| 49534 | 2N7002-HF | Halogênio MOSFET, V DS = 60V, I D = 0.25A, P D = 350mW | Comchip Technology |
| 49535 | 2N7002A | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49536 | 2N7002A-7 | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49537 | 2N7002AQ | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49538 | 2N7002AX | N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49539 | 2N7002BK | 60 V, 350 mA N-channel MOSFET Trench | NXP Semiconductors |
| 49540 | 2N7002BKM | 60 V, 450 mA N-channel MOSFET Trench | NXP Semiconductors |
| 49541 | 2N7002BKMB | 60 V, único MOSFET Trench N-channel | NXP Semiconductors |
| 49542 | 2N7002BKS | 60 V, 300 mA dupla N-channel MOSFET Trench | NXP Semiconductors |
| 49543 | 2N7002BKT | 60 V, 290 mA N-channel MOSFET Trench | NXP Semiconductors |
| 49544 | 2N7002BKV | 60 V, 340 mA dupla N-channel MOSFET Trench | NXP Semiconductors |
| 49545 | 2N7002BKW | 60 V, 310 mA N-channel MOSFET Trench | NXP Semiconductors |
| 49546 | 2N7002CK | 60 V, 0.3 A MOSFET Trench N-channel | NXP Semiconductors |
| 49547 | 2N7002CSM | TRANSISTOR DO MOS DA MODALIDADE DO REALCE DE N-CHANNEL | SemeLAB |
| 49548 | 2N7002DW | MOSFETS | Diodes |
| 49549 | 2N7002DW | N-Channel Enhancement Modo de Efeito de Campo Transistor | Fairchild Semiconductor |
| 49550 | 2N7002DW-7-F | DUAL N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49551 | 2N7002DWA | DUAL N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49552 | 2N7002DWA-13 | DUAL N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49553 | 2N7002DWA-7 | DUAL N-CHANNEL ENHANCEMENT MODO MOSFET | Diodes |
| 49554 | 2N7002E | Fet Do Nível Da Lógica De TrenchMOS(tm) | Philips |
| 49555 | 2N7002E | Mosfet Da N-Canaleta 60-V | Vishay |
| 49556 | 2N7002E | MOSFETS | Diodes |
| 49557 | 2N7002E | Sinal Pequeno de MOSFET 60V 310mA 2,5 Ohm Single N-Channel SOT-23 | ON Semiconductor |
| 49558 | 2N7002E | N-channel nível lógico TrenchMOS FET | NXP Semiconductors |
| 49559 | 2N7002E | 60V; 0.25A; N-canal de efeito de campo de modo enchanced transistor | SamHop Microelectronics Corp. |
| 49560 | 2N7002E | MOSFETs de pequenos sinais | Panasonic |
| | | |
