| Nr. | Nombre de la Parte | Descripción | Fabricante |
| 1088681 | SFS9644 | Mosfet Avanzado De la Energía | Fairchild Semiconductor |
| 1088682 | SFS9Z14 | Mosfet de la ENERGÍA Del P-canal | Fairchild Semiconductor |
| 1088683 | SFS9Z24 | Mosfet de la ENERGÍA Del P-canal | Fairchild Semiconductor |
| 1088684 | SFS9Z34 | Mosfet de la ENERGÍA Del P-canal | Fairchild Semiconductor |
| 1088685 | SFT1 | DIODOS DE RECTIFICADOR RÁPIDOS ESTUPENDOS | EIC discrete Semiconductors |
| 1088686 | SFT1001 | 250 V, 100 A PNP transistor de alta velocidad | Solid State Devices Inc |
| 1088687 | SFT1002 | 250 V, 100 A NPN transistor de alta velocidad | Solid State Devices Inc |
| 1088688 | SFT1003 | 250 V, 100 A PNP transistor de alta velocidad | Solid State Devices Inc |
| 1088689 | SFT1004 | 250 V, 100 A NPN transistor de alta velocidad | Solid State Devices Inc |
| 1088690 | SFT1010 | 100 V, 100 A alta energía transistor NPN | Solid State Devices Inc |
| 1088691 | SFT1012 | 120 V, 100 A de alta potencia transistor NPN | Solid State Devices Inc |
| 1088692 | SFT1014 | 140 V, 100 A de alta potencia NPN transistor | Solid State Devices Inc |
| 1088693 | SFT1016 | 160 V, 100 A de alta potencia NPN transistor | Solid State Devices Inc |
| 1088694 | SFT1018 | 180 V, 100 A de alta potencia NPN transistor | Solid State Devices Inc |
| 1088695 | SFT102 | 450 V, 0,5 A High Voltage transistor NPN | Solid State Devices Inc |
| 1088696 | SFT1020 | 200 V, 100 A alta energía transistor NPN | Solid State Devices Inc |
| 1088697 | SFT11 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088698 | SFT11G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088699 | SFT12 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088700 | SFT12G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088701 | SFT13 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088702 | SFT1305 | P-Channel MOSFET para Uso General usos de la conmutación | ON Semiconductor |
| 1088703 | SFT1341 | P-Channel MOSFET,-40V,-10A, 112mOhm, Soltero TP / TP-FA | ON Semiconductor |
| 1088704 | SFT1342 | P-Channel MOSFET,-60V,-12A, 62mOhm, Soltero TP / TP-FA | ON Semiconductor |
| 1088705 | SFT1350 | P-Channel MOSFET,-40V,-19A, 59mOhm, Soltero TP / TP-FA | ON Semiconductor |
| 1088706 | SFT13G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088707 | SFT14 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088708 | SFT1431 | Energía del canal N MOSFET, 35V, 11A, 25mOhm, Soltero TP / TP-FA | ON Semiconductor |
| 1088709 | SFT1440 | Energía del canal N MOSFET, 600V, 1.5A, 8.1Ohm, Soltero TP / TP-FA | ON Semiconductor |
| 1088710 | SFT1446 | Energía del canal N MOSFET, 60V, 20A, 51mOhm, Soltero TP / TP-FA | ON Semiconductor |
| 1088711 | SFT14G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088712 | SFT15 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088713 | SFT15G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088714 | SFT16 | Rectificador: Superfast | Taiwan Semiconductor |
| 1088715 | SFT16G | Rectificador: Superfast | Taiwan Semiconductor |
| 1088716 | SFT2 | DIODOS DE RECTIFICADOR RÁPIDOS ESTUPENDOS | EIC discrete Semiconductors |
| 1088717 | SFT2010 | 100 V, 200 A de alta energía transistor NPN | Solid State Devices Inc |
| 1088718 | SFT2012 | 120 V, 200 A de alta potencia transistor NPN | Solid State Devices Inc |
| 1088719 | SFT2014 | 140 V, 200 A de alta potencia NPN transistor | Solid State Devices Inc |
| 1088720 | SFT3 | DIODOS DE RECTIFICADOR RÁPIDOS ESTUPENDOS | EIC discrete Semiconductors |
| | | |
