| Nr. | Nombre de la Parte | Descripción | Fabricante |
| 926641 | ND471025 | Módulo aislado SCR/Diode dual del Prisionero de guerra-r-blok (250 amperios/hasta 1600 voltios) | Powerex Power Semiconductors |
| 926642 | ND471225 | Módulo aislado SCR/Diode dual del Prisionero de guerra-r-blok (250 amperios/hasta 1600 voltios) | Powerex Power Semiconductors |
| 926643 | ND471425 | Módulo aislado SCR/Diode dual del Prisionero de guerra-r-blok (250 amperios/hasta 1600 voltios) | Powerex Power Semiconductors |
| 926644 | ND471625 | Módulo aislado SCR/Diode dual del Prisionero de guerra-r-blok (250 amperios/hasta 1600 voltios) | Powerex Power Semiconductors |
| 926645 | ND471825 | 1800V, 250A propósito general diodo / scr diodo | Powerex Power Semiconductors |
| 926646 | ND4725 | Módulo aislado SCR/Diode dual del Prisionero de guerra-r-blok (250 amperios/hasta 1600 voltios) | Powerex Power Semiconductors |
| 926647 | ND487 | Diodos De Schottky Del Cuadrángulo | California Eastern Laboratories |
| 926648 | ND487C1-00 | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926649 | ND487C1-3P | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926650 | ND487C1-3R | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926651 | ND487C2-00 | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926652 | ND487C2-3P | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926653 | ND487C2-3R | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926654 | ND487R1-3P | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926655 | ND487R1-3R | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926656 | ND487R2-00 | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926657 | ND487R2-3P | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926658 | ND487R2-3R | 50 mA, Schottky del silicio barrera diodo | NEC |
| 926659 | ND487XX | diodo de barrera de Schottky de 50 mA/silicio | NEC |
| 926660 | ND5051-3A | 4 V, X para la banda K GaAs diodo Schottky mezclador barrera | NEC |
| 926661 | ND5051-3G | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926662 | ND5051-5E | 4 V, X para la banda K GaAs diodo Schottky mezclador barrera | NEC |
| 926663 | ND5052-3G | 6.5 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926664 | ND5111-3G | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926665 | ND5112-3G | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926666 | ND5112-5F | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926667 | ND5113-3G | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926668 | ND5113-5F | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926669 | ND5114-3G | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926670 | ND5114-5F | 4 V, GaAs Schottky barrera diodo epitaxial | NEC |
| 926671 | ND5558-00 | 4 V, GaAs plomo haz diodo de barrera Schottky | NEC |
| 926672 | ND587R-3C | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926673 | ND587R-3P | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926674 | ND587R-3R | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926675 | ND587T-3B | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926676 | ND587T-3P | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926677 | ND587T-3R | 4 V, gama GaAs Diodo de barrera Schottky | NEC |
| 926678 | ND6261-3F | 100 V, 10 mA, el diodo PIN de silicio microondas | NEC |
| 926679 | ND6271-5E | 100 V, 10 mA, el diodo PIN de silicio microondas | NEC |
| 926680 | ND6281-3A | 100 V, X-banda diodo PIN de silicio | NEC |
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