| Nr. | Nom de partie | Description | Fabricant |
| 1201 | HY51V65163HGJ-5 | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1202 | HY51V65163HGJ-6 | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1203 | HY51V65163HGLJ-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, de faible puissance | Hynix Semiconductor |
| 1204 | HY51V65163HGLJ-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, de faible puissance | Hynix Semiconductor |
| 1205 | HY51V65163HGLJ-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, de faible puissance | Hynix Semiconductor |
| 1206 | HY51V65163HGLT-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, de faible puissance | Hynix Semiconductor |
| 1207 | HY51V65163HGLT-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, de faible puissance | Hynix Semiconductor |
| 1208 | HY51V65163HGLT-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, de faible puissance | Hynix Semiconductor |
| 1209 | HY51V65163HGT-45 | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1210 | HY51V65163HGT-5 | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1211 | HY51V65163HGT-6 | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1212 | HY51V7403HG | DRACHME de 4M x 4Bit EDO | Hynix Semiconductor |
| 1213 | HY51VS17403HG | DRACHME de 4M x 4Bit EDO | Hynix Semiconductor |
| 1214 | HY51VS17403HGJ-5 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 1215 | HY51VS17403HGJ-6 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 1216 | HY51VS17403HGJ-7 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 70ns | Hynix Semiconductor |
| 1217 | HY51VS17403HGLJ-5 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 50 ns, de faible puissance | Hynix Semiconductor |
| 1218 | HY51VS17403HGLJ-6 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 60ns, de faible puissance | Hynix Semiconductor |
| 1219 | HY51VS17403HGLJ-7 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 70 ns, de faible puissance | Hynix Semiconductor |
| 1220 | HY51VS17403HGLT-5 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 50 ns, de faible puissance | Hynix Semiconductor |
| 1221 | HY51VS17403HGLT-6 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 60ns, de faible puissance | Hynix Semiconductor |
| 1222 | HY51VS17403HGLT-7 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 70 ns, de faible puissance | Hynix Semiconductor |
| 1223 | HY51VS17403HGT-5 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 1224 | HY51VS17403HGT-6 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 1225 | HY51VS17403HGT-7 | 4.194.304 mots x 4 bits EDO RAM, 3,3 V, 70ns | Hynix Semiconductor |
| 1226 | HY51VS18163HG | DRACHME du 1M X 16Bit EDO | Hynix Semiconductor |
| 1227 | HY51VS18163HGJ-5 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 50ns | Hynix Semiconductor |
| 1228 | HY51VS18163HGJ-6 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 60ns | Hynix Semiconductor |
| 1229 | HY51VS18163HGJ-7 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 70ns | Hynix Semiconductor |
| 1230 | HY51VS18163HGLJ-5 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 50ns, de faible puissance | Hynix Semiconductor |
| 1231 | HY51VS18163HGLJ-6 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 60ns, de faible puissance | Hynix Semiconductor |
| 1232 | HY51VS18163HGLJ-7 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 70ns, de faible puissance | Hynix Semiconductor |
| 1233 | HY51VS18163HGLT-5 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 50ns, de faible puissance | Hynix Semiconductor |
| 1234 | HY51VS18163HGLT-6 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 60ns, de faible puissance | Hynix Semiconductor |
| 1235 | HY51VS18163HGLT-7 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 70ns, de faible puissance | Hynix Semiconductor |
| 1236 | HY51VS18163HGT-5 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 50ns | Hynix Semiconductor |
| 1237 | HY51VS18163HGT-6 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 60ns | Hynix Semiconductor |
| 1238 | HY51VS18163HGT-7 | Dynamic RAM organisé 1.048.576 mots x 16 bits, auto rafraîchissement, 70ns | Hynix Semiconductor |
| 1239 | HY51VS65163HG | DRACHME de 4M x 16Bit EDO | Hynix Semiconductor |
| 1240 | HY51VS65163HGJ-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns | Hynix Semiconductor |
| 1241 | HY51VS65163HGJ-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns | Hynix Semiconductor |
| 1242 | HY51VS65163HGJ-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns | Hynix Semiconductor |
| 1243 | HY51VS65163HGLJ-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, de faible puissance | Hynix Semiconductor |
| 1244 | HY51VS65163HGLJ-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, de faible puissance | Hynix Semiconductor |
| 1245 | HY51VS65163HGLJ-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, de faible puissance | Hynix Semiconductor |
| 1246 | HY51VS65163HGLT-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, de faible puissance | Hynix Semiconductor |
| 1247 | HY51VS65163HGLT-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, de faible puissance | Hynix Semiconductor |
| 1248 | HY51VS65163HGLT-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, de faible puissance | Hynix Semiconductor |
| 1249 | HY51VS65163HGT-45 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns | Hynix Semiconductor |
| 1250 | HY51VS65163HGT-5 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns | Hynix Semiconductor |
| 1251 | HY51VS65163HGT-6 | 4m x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns | Hynix Semiconductor |
| 1252 | HY534256A | DRACHME de 256K x de 4-bit CMOS | Hynix Semiconductor |
| 1253 | HY534256AJ | DRACHME de 256K x de 4-bit CMOS | Hynix Semiconductor |
| 1254 | HY534256AJ-45 | 256K x 4 bits CMOS DRAM, 45ns | Hynix Semiconductor |
| 1255 | HY534256AJ-50 | 256K x 4 bits CMOS DRAM, 50ns | Hynix Semiconductor |
| 1256 | HY534256AJ-60 | 256K x 4 bits CMOS DRAM, 60ns | Hynix Semiconductor |
| 1257 | HY534256AJ-70 | 256K x 4 bits CMOS DRAM, 70ns | Hynix Semiconductor |
| 1258 | HY534256AJ-80 | 256K x 4 bits CMOS DRAM, 80ns | Hynix Semiconductor |
| 1259 | HY534256ALJ | DRACHME de 256K x de 4-bit CMOS | Hynix Semiconductor |
| 1260 | HY534256ALJ-45 | 256K x 4-bit CMOS DRAM, 45ns, de faible puissance | Hynix Semiconductor |
| 1261 | HY534256ALJ-50 | 256K x 4-bit CMOS DRAM, 50ns, de faible puissance | Hynix Semiconductor |
| 1262 | HY534256ALJ-60 | 256K x 4-bit CMOS DRAM, 60ns, de faible puissance | Hynix Semiconductor |
| 1263 | HY534256ALJ-70 | 256K x 4-bit CMOS DRAM, 70ns, de faible puissance | Hynix Semiconductor |
| 1264 | HY534256ALJ-80 | 256K x 4-bit CMOS DRAM, 80 ns, de faible puissance | Hynix Semiconductor |
| 1265 | HY534256ALS | DRACHME de 256K x de 4-bit CMOS | Hynix Semiconductor |
| 1266 | HY534256ALS-60 | 256K x 4-bit CMOS DRAM, 60ns, de faible puissance | Hynix Semiconductor |
| 1267 | HY534256ALS-70 | 256K x 4-bit CMOS DRAM, 70ns, de faible puissance | Hynix Semiconductor |
| 1268 | HY534256ALS-80 | 256K x 4-bit CMOS DRAM, 80 ns, de faible puissance | Hynix Semiconductor |
| 1269 | HY534256AS | DRACHME de 256K x de 4-bit CMOS | Hynix Semiconductor |
| 1270 | HY534256AS-60 | 256K x 4 bits CMOS DRAM, 60ns | Hynix Semiconductor |
| 1271 | HY534256AS-70 | 256K x 4 bits CMOS DRAM, 70ns | Hynix Semiconductor |
| 1272 | HY534256AS-80 | 256K x 4 bits CMOS DRAM, 80ns | Hynix Semiconductor |
| 1273 | HY57V161610D | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1274 | HY57V161610D-I | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1275 | HY57V161610DTC | SDRAM - 16Mb | Hynix Semiconductor |
| 1276 | HY57V161610DTC | SDRAM - 16Mb | Hynix Semiconductor |
| 1277 | HY57V161610DTC-10 | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1278 | HY57V161610DTC-10(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1279 | HY57V161610DTC-10(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1280 | HY57V161610DTC-10I | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1281 | HY57V161610DTC-15 | SDRAM - 16Mb | Hynix Semiconductor |
| 1282 | HY57V161610DTC-15 | SDRAM - 16Mb | Hynix Semiconductor |
| 1283 | HY57V161610DTC-5 | SDRAM - 16Mb | Hynix Semiconductor |
| 1284 | HY57V161610DTC-5 | SDRAM - 16Mb | Hynix Semiconductor |
| 1285 | HY57V161610DTC-55 | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1286 | HY57V161610DTC-55(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1287 | HY57V161610DTC-55(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1288 | HY57V161610DTC-55I | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1289 | HY57V161610DTC-6 | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1290 | HY57V161610DTC-6(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1291 | HY57V161610DTC-6(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1292 | HY57V161610DTC-6I | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1293 | HY57V161610DTC-7 | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1294 | HY57V161610DTC-7(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1295 | HY57V161610DTC-7(I) | SDRAM - 16Mb | Hynix Semiconductor |
| 1296 | HY57V161610DTC-7I | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1297 | HY57V161610DTC-8 | SDRAM - 16Mb | Hynix Semiconductor |
| 1298 | HY57V161610DTC-8 | SDRAM - 16Mb | Hynix Semiconductor |
| 1299 | HY57V161610E | 2 banques X 512K X DRACHME synchrone de 16 bits | Hynix Semiconductor |
| 1300 | HY57V161610ET | SDRAM - 16Mb | Hynix Semiconductor |
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