| Nr. | Nome della parte | Descrizione | Fabbricatore |
| 6001 | HM5164165TT-5 | 64M EDO DRAM (4 Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 6002 | HM5164165TT-6 | 64M EDO DRAM (4 Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 6003 | HM5164405FJ-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6004 | HM5164405FJ-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6005 | HM5164405FLJ-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6006 | HM5164405FLJ-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6007 | HM5164405FLTT-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6008 | HM5164405FLTT-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6009 | HM5164405FTT-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6010 | HM5164405FTT-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6011 | HM5165165F | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6012 | HM5165165FJ-5 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6013 | HM5165165FJ-6 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6014 | HM5165165FLJ-5 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6015 | HM5165165FLJ-6 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6016 | HM5165165FLTT-5 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6017 | HM5165165FLTT-6 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6018 | HM5165165FTT-5 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6019 | HM5165165FTT-6 | IL DRAM de EDO di 64M (4-Mword x a 16 bit) 8k refresh/4k rinfresca | Hitachi Semiconductor |
| 6020 | HM5165165J-5 | 64M EDO DRAM (4 Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 6021 | HM5165165J-6 | 64M EDO DRAM (4 Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 6022 | HM5165165LJ-5 | 64M EDO DRAM (4 Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 6023 | HM5165165LJ-6 | 64M EDO DRAM (4 Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 6024 | HM5165165LTT-5 | 64M EDO DRAM (4 Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 6025 | HM5165165LTT-6 | 64M EDO DRAM (4 Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 6026 | HM5165165TT-5 | 64M EDO DRAM (4 Mword x 16-bit), 50ns | Hitachi Semiconductor |
| 6027 | HM5165165TT-6 | 64M EDO DRAM (4 Mword x 16-bit), 60ns | Hitachi Semiconductor |
| 6028 | HM5165405FJ-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6029 | HM5165405FJ-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6030 | HM5165405FLJ-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6031 | HM5165405FLJ-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6032 | HM5165405FLTT-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6033 | HM5165405FLTT-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6034 | HM5165405FTT-5 | 16M x 4 bit EDO DRAM, 50ns | Hitachi Semiconductor |
| 6035 | HM5165405FTT-6 | 16M x 4 bit EDO DRAM, 60ns | Hitachi Semiconductor |
| 6036 | HM51S4260AJ-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÖ memoria ad accesso casuale | Hitachi Semiconductor |
| 6037 | HM51S4260AJ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiß memoria ad accesso casuale | Hitachi Semiconductor |
| 6038 | HM51S4260AJ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiú memoria ad accesso casuale | Hitachi Semiconductor |
| 6039 | HM51S4260ALJ-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÐ memoria ad accesso casuale | Hitachi Semiconductor |
| 6040 | HM51S4260ALJ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÖ memoria ad accesso casuale | Hitachi Semiconductor |
| 6041 | HM51S4260ALJ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiæ memoria ad accesso casuale | Hitachi Semiconductor |
| 6042 | HM51S4260ALRR-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiú memoria ad accesso casuale | Hitachi Semiconductor |
| 6043 | HM51S4260ALRR-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiæ memoria ad accesso casuale | Hitachi Semiconductor |
| 6044 | HM51S4260ALRR-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÖ memoria ad accesso casuale | Hitachi Semiconductor |
| 6045 | HM51S4260ALTT-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiß memoria ad accesso casuale | Hitachi Semiconductor |
| 6046 | HM51S4260ALTT-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6047 | HM51S4260ALTT-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiõ memoria ad accesso casuale | Hitachi Semiconductor |
| 6048 | HM51S4260ALZ-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiï memoria ad accesso casuale | Hitachi Semiconductor |
| 6049 | HM51S4260ALZ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6050 | HM51S4260ALZ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÌ memoria ad accesso casuale | Hitachi Semiconductor |
| 6051 | HM51S4260ARR-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiõ memoria ad accesso casuale | Hitachi Semiconductor |
| 6052 | HM51S4260ARR-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiú memoria ad accesso casuale | Hitachi Semiconductor |
| 6053 | HM51S4260ARR-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiß memoria ad accesso casuale | Hitachi Semiconductor |
| 6054 | HM51S4260ATT-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6055 | HM51S4260ATT-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÌ memoria ad accesso casuale | Hitachi Semiconductor |
| 6056 | HM51S4260ATT-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6057 | HM51S4260AZ-10 | 100ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiæ memoria ad accesso casuale | Hitachi Semiconductor |
| 6058 | HM51S4260AZ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiï memoria ad accesso casuale | Hitachi Semiconductor |
| 6059 | HM51S4260AZ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÐ memoria ad accesso casuale | Hitachi Semiconductor |
| 6060 | HM51S4260CJ-6 | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiú memoria ad accesso casuale | Hitachi Semiconductor |
| 6061 | HM51S4260CJ-6R | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dinamiche memoria ad accesso casuale | Hitachi Semiconductor |
| 6062 | HM51S4260CJ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiß memoria ad accesso casuale | Hitachi Semiconductor |
| 6063 | HM51S4260CJ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamin memoria ad accesso casuale | Hitachi Semiconductor |
| 6064 | HM51S4260CLJ-6 | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6065 | HM51S4260CLJ-6R | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6066 | HM51S4260CLJ-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiõ memoria ad accesso casuale | Hitachi Semiconductor |
| 6067 | HM51S4260CLJ-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÓ memoria ad accesso casuale | Hitachi Semiconductor |
| 6068 | HM51S4260CLTT-6 | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6069 | HM51S4260CLTT-6R | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÌ memoria ad accesso casuale | Hitachi Semiconductor |
| 6070 | HM51S4260CLTT-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6071 | HM51S4260CLTT-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit Dynamie memoria ad accesso casuale | Hitachi Semiconductor |
| 6072 | HM51S4260CTT-6 | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiÎ memoria ad accesso casuale | Hitachi Semiconductor |
| 6073 | HM51S4260CTT-6R | 60ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamií memoria ad accesso casuale | Hitachi Semiconductor |
| 6074 | HM51S4260CTT-7 | 70ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiï memoria ad accesso casuale | Hitachi Semiconductor |
| 6075 | HM51S4260CTT-8 | 80ns; V (cc): da -1,0 a + 7,0 V; 50mA; 1W; 262.144 parole x 16-bit dynamiò memoria ad accesso casuale | Hitachi Semiconductor |
| 6076 | HM51S4800AJ-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6077 | HM51S4800AJ-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6078 | HM51S4800ALJ-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6079 | HM51S4800ALJ-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6080 | HM51S4800ALRR-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6081 | HM51S4800ALRR-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6082 | HM51S4800ALTT-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6083 | HM51S4800ALTT-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6084 | HM51S4800ARR-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6085 | HM51S4800ARR-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6086 | HM51S4800ATT-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6087 | HM51S4800ATT-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6088 | HM51S4800CJ-6 | 60ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6089 | HM51S4800CJ-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6090 | HM51S4800CJ-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6091 | HM51S4800CJI-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6092 | HM51S4800CJI-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6093 | HM51S4800CLJ-6 | 60ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6094 | HM51S4800CLJ-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6095 | HM51S4800CLJ-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6096 | HM51S4800CLJI-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6097 | HM51S4800CLJI-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6098 | HM51S4800CLTT-6 | 60ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6099 | HM51S4800CLTT-7 | 70ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| 6100 | HM51S4800CLTT-8 | 80ns; V (cc): da -1 a + 7V; 50mA; 1W; Memoria ad accesso casuale 524.288 parole x 8 bit dinamica | Hitachi Semiconductor |
| | | |
