| Nr. | Nom de partie | Description | Fabricant |
| 501 | BS616UV2011DC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 502 | BS616UV2011DI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 503 | BS616UV2011EC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 504 | BS616UV2011EI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 505 | BS616UV2011TC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 506 | BS616UV2011TI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 128K X | Brilliance Semiconductor |
| 507 | BS616UV2019 | 2M(128Kx16) RAM asynchrone de charge statique de bits | Brilliance Semiconductor |
| 508 | BS616UV2021 | Bit ultra bas 8 de Power/Voltage CMOS SRAM 128K X 16 ou de 256K X permutable | Brilliance Semiconductor |
| 509 | BS616UV2021AC | Bit ultra bas 8 de Power/Voltage CMOS SRAM 128K X 16 ou de 256K X permutable | Brilliance Semiconductor |
| 510 | BS616UV2021AC10 | 10ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 511 | BS616UV2021AC70 | 70ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 512 | BS616UV2021AI | Bit ultra bas 8 de Power/Voltage CMOS SRAM 128K X 16 ou de 256K X permutable | Brilliance Semiconductor |
| 513 | BS616UV2021AI10 | 10ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 514 | BS616UV2021AI70 | 70ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 515 | BS616UV2021DC | Bit ultra bas 8 de Power/Voltage CMOS SRAM 128K X 16 ou de 256K X permutable | Brilliance Semiconductor |
| 516 | BS616UV2021DC10 | 10ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 517 | BS616UV2021DC70 | 70ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 518 | BS616UV2021DI | Bit ultra bas 8 de Power/Voltage CMOS SRAM 128K X 16 ou de 256K X permutable | Brilliance Semiconductor |
| 519 | BS616UV2021DI10 | 10ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 520 | BS616UV2021DI70 | 70ns ultra faible puissance / tension SRAM CMOS 128K x 16 ou 256 K x 8 bits commutable | Brilliance Semiconductor |
| 521 | BS616UV4010 | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 522 | BS616UV4010BC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 523 | BS616UV4010BI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 524 | BS616UV4010DC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 525 | BS616UV4010DI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 526 | BS616UV4010EC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 527 | BS616UV4010EI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 256K X | Brilliance Semiconductor |
| 528 | BS616UV4016 | 4M(256Kx16) RAM asynchrone de charge statique de bits | Brilliance Semiconductor |
| 529 | BS616UV4020 | Bit ultra bas 8 de Power/Voltage CMOS SRAM 256K X 16 ou de 512K X permutable | Brilliance Semiconductor |
| 530 | BS616UV4020BC | Bit ultra bas 8 de Power/Voltage CMOS SRAM 256K X 16 ou de 512K X permutable | Brilliance Semiconductor |
| 531 | BS616UV4020BI | Bit ultra bas 8 de Power/Voltage CMOS SRAM 256K X 16 ou de 512K X permutable | Brilliance Semiconductor |
| 532 | BS616UV4020DC | Bit ultra bas 8 de Power/Voltage CMOS SRAM 256K X 16 ou de 512K X permutable | Brilliance Semiconductor |
| 533 | BS616UV4020DI | Bit ultra bas 8 de Power/Voltage CMOS SRAM 256K X 16 ou de 512K X permutable | Brilliance Semiconductor |
| 534 | BS616UV8010 | Bit Ultra Bas 16 De Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 535 | BS616UV8010BC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 536 | BS616UV8010BI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 537 | BS616UV8011 | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 538 | BS616UV8011BC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 539 | BS616UV8011BI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 540 | BS616UV8011DC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 541 | BS616UV8011DI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 542 | BS616UV8011FC | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 543 | BS616UV8011FI | Bit ultra bas 16 de Power/Voltage CMOS SRAM 512K X | Brilliance Semiconductor |
| 544 | BS616UV8020 | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 545 | BS616UV8020BC | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 546 | BS616UV8020BI | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 547 | BS616UV8021 | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 548 | BS616UV8021BC | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 549 | BS616UV8021BI | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
| 550 | BS616UV8021DC | Power/Voltage ultra bas CMOS SRAM 512K X 16 ou bit 8 du 1M X permutable | Brilliance Semiconductor |
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