| Nr. | Nom de partie | Description | Fabricant |
| 1184441 | T2535-XXXG | TRIACS 2Ä | ST Microelectronics |
| 1184442 | T2535-XXXG-TR | TRIACS 2Ä | ST Microelectronics |
| 1184443 | T2550-12G | 1200V 25A circuit amortisseur ™ Triac | ST Microelectronics |
| 1184444 | T2550-12G-TR | 1200V 25A circuit amortisseur ™ Triac | ST Microelectronics |
| 1184445 | T2550-12T | 1200V 25A circuit amortisseur ™ Triac | ST Microelectronics |
| 1184446 | T2550H | TRIACS 2Ä | ST Microelectronics |
| 1184447 | T2550H-600T | TRIACS 2Ä | ST Microelectronics |
| 1184448 | T2550H-600T | TRIAC À HAUTES TEMPÉRATURES POUR LES APPAREILS CHAUDS | SGS Thomson Microelectronics |
| 1184449 | T2550H-600T | TRIACS 2Ä | SGS Thomson Microelectronics |
| 1184450 | T2550H-600TRG | TRIACS 2Ä | ST Microelectronics |
| 1184451 | T2551N | THYRISTORS DE COMMANDE DE PHASE | etc |
| 1184452 | T2601N | THYRISTORS DE COMMANDE DE PHASE | etc |
| 1184453 | T2700 | TRIACS À HAUTE TENSION DU SILICIUM 6-A | General Electric Solid State |
| 1184454 | T2700B | TRIACS À HAUTE TENSION DU SILICIUM 6-A | General Electric Solid State |
| 1184455 | T2700D | TRIACS À HAUTE TENSION DU SILICIUM 6-A | General Electric Solid State |
| 1184456 | T2700M | TRIACS À HAUTE TENSION DU SILICIUM 6-A | General Electric Solid State |
| 1184457 | T2700N | TRIACS À HAUTE TENSION DU SILICIUM 6-A | General Electric Solid State |
| 1184458 | T271N | THYRISTORS DE COMMANDE DE PHASE | etc |
| 1184459 | T2800 | Triacs 8 AMPÈRES de RMS 200 600 VOLTS | Motorola |
| 1184460 | T2800 | Triacs | ON Semiconductor |
| 1184461 | T2800-D | Triacs | ON Semiconductor |
| 1184462 | T2800A | Haute tension, 8-A triac de silicium. Vdrom 100 V. | General Electric Solid State |
| 1184463 | T2800B | Haute tension, 8-A triac de silicium. Vdrom 200 V. | General Electric Solid State |
| 1184464 | T2800B | Triac | Motorola |
| 1184465 | T2800C | Haute tension, 8-A triac de silicium. Vdrom 300 V. | General Electric Solid State |
| 1184466 | T2800D | TRIAC Å 400V | ON Semiconductor |
| 1184467 | T2800D | Haute tension, 8-A triac de silicium. Vdrom 400 V. | General Electric Solid State |
| 1184468 | T2800D | Triac | Motorola |
| 1184469 | T2800E | Haute tension, 8-A triac de silicium. Vdrom 500 V. | General Electric Solid State |
| 1184470 | T2800M | Haute tension, 8-A triac de silicium. Vdrom 600 V. | General Electric Solid State |
| 1184471 | T2800M | Triac | Motorola |
| 1184472 | T2800N | Haute tension, 8-A triac de silicium. Vdrom 800 V. | General Electric Solid State |
| 1184473 | T2801 | Émetteur récepteur À microplaquette unique de DECT | Atmel |
| 1184474 | T2801-PLH | Émetteur récepteur D'un seul morceau de DECT | Atmel |
| 1184475 | T2802 | 2,4 IC d'émetteur récepteur de gigahertz DECT avec VCO intégré | Atmel |
| 1184476 | T2802-PLQ | 2.4 ÉMETTEUR RÉCEPTEUR D'UN SEUL MORCEAU De GigahertzWDECT/ISM | Atmel |
| 1184477 | T2802A | Haute tension, 8-A triac de silicium. Vdrom 100 V. | General Electric Solid State |
| 1184478 | T2802B | Haute tension, 8-A triac de silicium. Vdrom 200 V. | General Electric Solid State |
| 1184479 | T2802C | Haute tension, 8-A triac de silicium. Vdrom 300 V. | General Electric Solid State |
| 1184480 | T2802D | Haute tension, 8-A triac de silicium. Vdrom 400 V. | General Electric Solid State |
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