| Nr. | Nom de partie | Description | Fabricant |
| 498881 | HM5164405FLTT-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498882 | HM5164405FLTT-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498883 | HM5164405FTT-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498884 | HM5164405FTT-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498885 | HM5165165F | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498886 | HM5165165FJ-5 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498887 | HM5165165FJ-6 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498888 | HM5165165FLJ-5 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498889 | HM5165165FLJ-6 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498890 | HM5165165FLTT-5 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498891 | HM5165165FLTT-6 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498892 | HM5165165FTT-5 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498893 | HM5165165FTT-6 | la DRACHME d'EDO de 64M (4-Mword x de 16 bits) 8k refresh/4k régénèrent | Hitachi Semiconductor |
| 498894 | HM5165165J-5 | 64M EDO DRAM (4 Mword x 16 bits), 50ns | Hitachi Semiconductor |
| 498895 | HM5165165J-6 | 64M EDO DRAM (4 Mword x 16 bits), 60ns | Hitachi Semiconductor |
| 498896 | HM5165165LJ-5 | 64M EDO DRAM (4 Mword x 16 bits), 50ns | Hitachi Semiconductor |
| 498897 | HM5165165LJ-6 | 64M EDO DRAM (4 Mword x 16 bits), 60ns | Hitachi Semiconductor |
| 498898 | HM5165165LTT-5 | 64M EDO DRAM (4 Mword x 16 bits), 50ns | Hitachi Semiconductor |
| 498899 | HM5165165LTT-6 | 64M EDO DRAM (4 Mword x 16 bits), 60ns | Hitachi Semiconductor |
| 498900 | HM5165165TT-5 | 64M EDO DRAM (4 Mword x 16 bits), 50ns | Hitachi Semiconductor |
| 498901 | HM5165165TT-6 | 64M EDO DRAM (4 Mword x 16 bits), 60ns | Hitachi Semiconductor |
| 498902 | HM5165405FJ-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498903 | HM5165405FJ-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498904 | HM5165405FLJ-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498905 | HM5165405FLJ-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498906 | HM5165405FLTT-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498907 | HM5165405FLTT-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498908 | HM5165405FTT-5 | 16M x 4 bits EDO DRAM, 50ns | Hitachi Semiconductor |
| 498909 | HM5165405FTT-6 | 16M x 4 bits EDO DRAM, 60ns | Hitachi Semiconductor |
| 498910 | HM51S4260AJ-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÖ mémoire vive | Hitachi Semiconductor |
| 498911 | HM51S4260AJ-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiß mémoire vive | Hitachi Semiconductor |
| 498912 | HM51S4260AJ-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiú mémoire vive | Hitachi Semiconductor |
| 498913 | HM51S4260ALJ-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÐ mémoire vive | Hitachi Semiconductor |
| 498914 | HM51S4260ALJ-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÖ mémoire vive | Hitachi Semiconductor |
| 498915 | HM51S4260ALJ-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiæ mémoire vive | Hitachi Semiconductor |
| 498916 | HM51S4260ALRR-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiú mémoire vive | Hitachi Semiconductor |
| 498917 | HM51S4260ALRR-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiæ mémoire vive | Hitachi Semiconductor |
| 498918 | HM51S4260ALRR-8 | 80 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiÖ mémoire vive | Hitachi Semiconductor |
| 498919 | HM51S4260ALTT-10 | 100 ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamiß mémoire vive | Hitachi Semiconductor |
| 498920 | HM51S4260ALTT-7 | 70ns; V (cc): -1,0 à + 7,0 V; 50mA; 1W; 262.144 mot x 16 bits dynamie mémoire vive | Hitachi Semiconductor |
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