| Nr. | Teilname | Beschreibung | Hersteller |
| 1005081 | PMV56XN | uTrenchmos (tm) extrem niedriges Niveau FET | Philips |
| 1005082 | PMV56XN | PMV56XN; uTrenchmos (tm) extrem niedriges Niveau FET | Philips |
| 1005083 | PMV60EN | uTrenchMOS tm erhöhte Logikniveau FET | Philips |
| 1005084 | PMV65XP | P-Führung TrenchMOS(tm) extrem niedriges Niveau FET | Philips |
| 1005085 | PMV65XP | P-Führung TrenchMOS(tm) extrem niedriges Niveau FET | Philips |
| 1005086 | PMV65XP | PMV65XP; P-Führung TrenchMOS(tm) extrem niedriges Niveau FET | Philips |
| 1005087 | PMV65XP | 20 V, Single P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005088 | PMV65XPE | 20 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005089 | PMV75UP | 20 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005090 | PMV90EN | 30 V, Single N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005091 | PMWD15UN | DoppeluTrenchMOS(tm). ultra niedriges Niveau FET | Philips |
| 1005092 | PMWD16UN | DoppeluTrenchMOS(TM) ultra niedriges Niveau FET | Philips |
| 1005093 | PMWD18UN | DoppeluTrenchMOS(tm) ultra niedriges Niveau FET | Philips |
| 1005094 | PMWD19UN | DoppeluTrenchMOS(TM) ultra niedriges Niveau FET | Philips |
| 1005095 | PMWD20XN | DoppelN-führung microTrenchMOS(tm) extrem niedriges Niveau FET | Philips |
| 1005096 | PMWD20XN | DoppelN-führung microTrenchMOS(tm) extrem niedriges Niveau FET | Philips |
| 1005097 | PMWD20XN | PMWD20XN; DoppelN-führung uTrenchmos (tm) extremniedriges Niveau FET | Philips |
| 1005098 | PMWD26UN | DoppeluTrenchMOS(TM) ultra niedriges Niveau FET | Philips |
| 1005099 | PMWD30UN | DoppeluTrenchMOS(TM) ultra niedriges Niveau FET | Philips |
| 1005100 | PMXB120EPE | 30 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005101 | PMXB350UPE | 20 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005102 | PMXB360ENEA | 80 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005103 | PMXB40UNE | 12 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005104 | PMXB43UNE | 20 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005105 | PMXB56EN | 30 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005106 | PMXB65ENE | 30 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005107 | PMXB65UPE | 12 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005108 | PMXB75UPE | 20 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005109 | PMZ1000UN | N-Kanal-FET TrenchMOS Standardniveau | NXP Semiconductors |
| 1005110 | PMZ250UN | N-Kanal-TrenchMOS extrem niedrigen Niveau FET | NXP Semiconductors |
| 1005111 | PMZ270XN | N-Kanal-TrenchMOS extrem niedrigen Niveau FET | NXP Semiconductors |
| 1005112 | PMZ290UN | 20 V, Single N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005113 | PMZ290UNE | 20 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005114 | PMZ350UPE | 20 V, P-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005115 | PMZ350XN | N-Kanal-FET TrenchMOS Standardniveau | NXP Semiconductors |
| 1005116 | PMZ370UNE | 30 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005117 | PMZ390UN | N-Kanal-FET TrenchMOS Standardniveau | NXP Semiconductors |
| 1005118 | PMZ600UNE | 20 V, N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 1005119 | PMZ760SN | PMZ760SN; uTrenchMOS (tm) Standardniveau FET | Philips |
| 1005120 | PMZ760SN | N-Kanal-FET TrenchMOS Standardniveau | NXP Semiconductors |
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