| Nr. | Teilname | Beschreibung | Hersteller |
| 1311161 | VNV20N07-E | OMNIFET: VOLL AUTOPROTECTED Leistungs-MOSFET | ST Microelectronics |
| 1311162 | VNV20N0713TR | OMNIFET VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311163 | VNV20N07TR-E | OMNIFET: VOLL AUTOPROTECTED Leistungs-MOSFET | ST Microelectronics |
| 1311164 | VNV28N04 | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311165 | VNV28N04 | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311166 | VNV35N07 | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311167 | VNV35N07 | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311168 | VNV35N0713TR | OMNIFET VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311169 | VNV35NV04 | "OMNIFET II": VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311170 | VNV35NV04-E | OMNIFET II: VOLL AUTOPROTECTED Leistungs-MOSFET | ST Microelectronics |
| 1311171 | VNV35NV0413TR | OMNIFET II: VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311172 | VNV35NV04TR-E | OMNIFET II: VOLL AUTOPROTECTED Leistungs-MOSFET | ST Microelectronics |
| 1311173 | VNV49N04 | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311174 | VNV49N04 | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311175 | VNV49N0413TR | OMNIFET VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311176 | VNW100N04 | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311177 | VNW100N04 | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311178 | VNW35NV04 | "OMNIFET II": VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311179 | VNW50N04 | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311180 | VNW50N04 | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311181 | VNW50N04A | "OMNIFET" VÖLLIG AUTOPROTECTED ENERGIE MOSFET | ST Microelectronics |
| 1311182 | VNW50N04A | ?NIFET?FULLY AUTOPROTECTED ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1311183 | VOICE SECURITY, VARIABLE SPLIT BAND SCRA | Das Aufgeteilte Kriechende Band Versorgt Sprachsicherheit | CONSUMER MICROCIRCUITS LIMITED |
| 1311184 | VOLTAGEREGULATOR | austriamicrosystems | Austria Mikro Systems |
| 1311185 | VOP0300B | P-Führung Verbesserung-Modus Mosfet Transistoren | Vishay |
| 1311186 | VOP0300LS | P-Führung Verbesserung-Modus Mosfet Transistoren | Vishay |
| 1311187 | VP-1000A | Digital Sprachprozessor | etc |
| 1311188 | VP-1000AF | Digital Sprachprozessor | etc |
| 1311189 | VP-1608F | Digital Sprachprozessor | etc |
| 1311190 | VP0104 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311191 | VP0104N3 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311192 | VP0104N3 | -40 V, 8 Ohm, P-Kanal-Anreicherungsmode-D-MOS-FET Leistungs | Topaz Semiconductor |
| 1311193 | VP0104ND | -40 V, 8 Ohm, P-Kanal-Anreicherungsmode-D-MOS-FET Leistungs | Topaz Semiconductor |
| 1311194 | VP0106 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311195 | VP0106N3 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311196 | VP0106N3 | -60 V, 8 Ohm, P-Kanal-Anreicherungsmode-D-MOS-FET Leistungs | Topaz Semiconductor |
| 1311197 | VP0106ND | -60 V, 8 Ohm, P-Kanal-Anreicherungsmode-D-MOS-FET Leistungs | Topaz Semiconductor |
| 1311198 | VP0109 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311199 | VP0109N3 | P-Führung Verbesserung-Modus Vertikale DMOS FETs | Supertex Inc |
| 1311200 | VP0109N3 | -90 V, 8 Ohm, P-Kanal-Anreicherungsmode-D-MOS-FET Leistungs | Topaz Semiconductor |
| | | |
