| Nr. | Teilname | Beschreibung | Hersteller |
| 31361 | 1N756A | 1N43 1N7 REIHE ZENER DIODEN | Leshan Radio Company |
| 31362 | 1N756A | Verbleiter Zener Diode Universeller Zweck | Central Semiconductor |
| 31363 | 1N756A | 8,2 V, 400 mW Siliziumdioden | BKC International Electronics |
| 31364 | 1N756A | 8.2V Professional Grade 400 mW Axial Zener Diode | Continental Device India Limited |
| 31365 | 1N756A | 500 mW, Silizium Zenerdiode. Zenerspannung 8.2 V. Teststrom 20 mA. + -5% Toleranz. | Jinan Gude Electronic Device |
| 31366 | 1N756A | 500 Milliwatt Glas Silizium Zenerdiode | Motorola |
| 31367 | 1N756A (DO7) | Zener Spannung Regler-Diode | Microsemi |
| 31368 | 1N756A-1 | 8,2 V, 400 mW Silizium Zenerdiode | BKC International Electronics |
| 31369 | 1N756A-1 | Zener Voltage Regulator Diode | Microsemi |
| 31370 | 1N756ATR | 8.2V, 0.5W Zener Diode | Fairchild Semiconductor |
| 31371 | 1N756AUR-1 | Zener Voltage Regulator Diode | Microsemi |
| 31372 | 1N756A_T50A | 8.2V, 0.5W Zener Diode | Fairchild Semiconductor |
| 31373 | 1N756A_T50R | 8.2V, 0.5W Zener Diode | Fairchild Semiconductor |
| 31374 | 1N756B | 8.2 V, 20 mA, Zenerdiode | Leshan Radio Company |
| 31375 | 1N756C | 500 mW, Silizium Zenerdiode. Zenerspannung 8.2 V. Teststrom 20 mA. + -2% Toleranz. | Jinan Gude Electronic Device |
| 31376 | 1N756C | 8.2 V, 20 mA, Zenerdiode | Leshan Radio Company |
| 31377 | 1N756D | 500 mW, Silizium Zenerdiode. Zenerspannung 8.2 V. Teststrom 20 mA. + -1% Toleranz. | Jinan Gude Electronic Device |
| 31378 | 1N756D | 8.2 V, 20 mA, Zenerdiode | Leshan Radio Company |
| 31379 | 1N757 | Zener Spannung Regler-Diode | Microsemi |
| 31380 | 1N757 | Zener Spannung Regler-Diode | Microsemi |
| 31381 | 1N757 | DIODEN DES SILIKON-0.5W PLANARE ZENER | Chenyi Electronics |
| 31382 | 1N757 | PLANARE ZENER DIODEN DES SILIKON- | GOOD-ARK Electronics |
| 31383 | 1N757 | 500MW DIODEN DES SILIKON-ZENER | Jinan Gude Electronic Device |
| 31384 | 1N757 | Silikon 0.5W Planare Zener Dioden | Micro Commercial Components |
| 31385 | 1N757 | DIODEN DES SILIKON-0.5W PLANARE ZENER | Shanghai Sunrise Electronics |
| 31386 | 1N757 | 9,1 V, 400 mW Siliziumdioden | BKC International Electronics |
| 31387 | 1N757 | 9.1V Professional Grade 400 mW Axial Zener Diode | Continental Device India Limited |
| 31388 | 1N757 | 500 mW Siliziumdioden. Max Zener-Impedanz 10,0 Ohm, max Zenerspannung 9.1 V (Iz 20mA). | Fairchild Semiconductor |
| 31389 | 1N757 (DO7) | Zener Spannung Regler-Diode | Microsemi |
| 31390 | 1N757A | Halbes Watt Zeners | National Semiconductor |
| 31391 | 1N757A | Zeners | Fairchild Semiconductor |
| 31392 | 1N757A | Zener Dioden | Vishay |
| 31393 | 1N757A | Zener Spannung Regler-Diode | Microsemi |
| 31394 | 1N757A | Zener Spannung Regler-Diode | Microsemi |
| 31395 | 1N757A | ZENER DIODEN | General Semiconductor |
| 31396 | 1N757A | DOPPELTER STECKER-AUFBAU | Compensated Devices Incorporated |
| 31397 | 1N757A | 1N43 1N7 REIHE ZENER DIODEN | Leshan Radio Company |
| 31398 | 1N757A | Verbleiter Zener Diode Universeller Zweck | Central Semiconductor |
| 31399 | 1N757A | 9,1 V, 400 mW Siliziumdioden | BKC International Electronics |
| 31400 | 1N757A | 9.1V Professional Grade 400 mW Axial Zener Diode | Continental Device India Limited |
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