| Nr. | Teilname | Beschreibung | Hersteller |
| 441561 | GM71V17403CLJ-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns, geringer Strom | Hynix Semiconductor |
| 441562 | GM71V17403CLJ-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns, geringer Strom | Hynix Semiconductor |
| 441563 | GM71V17403CLJ-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns, geringer Strom | Hynix Semiconductor |
| 441564 | GM71V17403CLT-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns, geringer Strom | Hynix Semiconductor |
| 441565 | GM71V17403CLT-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns, geringer Strom | Hynix Semiconductor |
| 441566 | GM71V17403CLT-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns, geringer Strom | Hynix Semiconductor |
| 441567 | GM71V17403CT-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns | Hynix Semiconductor |
| 441568 | GM71V17403CT-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns | Hynix Semiconductor |
| 441569 | GM71V17403CT-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns | Hynix Semiconductor |
| 441570 | GM71V18163C | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441571 | GM71V18163C-5 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441572 | GM71V18163C-6 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441573 | GM71V18163C-7 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441574 | GM71V18163CJ-5 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 441575 | GM71V18163CJ-6 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 441576 | GM71V18163CJ-7 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 70 ns | Hynix Semiconductor |
| 441577 | GM71V18163CL-5 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441578 | GM71V18163CL-6 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441579 | GM71V18163CL-7 | 1.048.576 WÖRTER x 16 BITCMOS DYNAMISCHES RAM | Hynix Semiconductor |
| 441580 | GM71V18163CLJ-5 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 441581 | GM71V18163CLJ-6 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 441582 | GM71V18163CLJ-7 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 70 ns | Hynix Semiconductor |
| 441583 | GM71VS17403CJ-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns | Hynix Semiconductor |
| 441584 | GM71VS17403CJ-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns | Hynix Semiconductor |
| 441585 | GM71VS17403CJ-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns | Hynix Semiconductor |
| 441586 | GM71VS17403CLJ-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns, geringer Strom | Hynix Semiconductor |
| 441587 | GM71VS17403CLJ-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns, geringer Strom | Hynix Semiconductor |
| 441588 | GM71VS17403CLJ-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns, geringer Strom | Hynix Semiconductor |
| 441589 | GM71VS17403CLT-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns, geringer Strom | Hynix Semiconductor |
| 441590 | GM71VS17403CLT-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns, geringer Strom | Hynix Semiconductor |
| 441591 | GM71VS17403CLT-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns, geringer Strom | Hynix Semiconductor |
| 441592 | GM71VS17403CT-5 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 50ns | Hynix Semiconductor |
| 441593 | GM71VS17403CT-6 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 60ns | Hynix Semiconductor |
| 441594 | GM71VS17403CT-7 | CMOS DRAM 4.194.304 Wörter x 4 bit, 3,3V, 70ns | Hynix Semiconductor |
| 441595 | GM71VS18163CJ-5 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 441596 | GM71VS18163CJ-6 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 441597 | GM71VS18163CJ-7 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 70 ns | Hynix Semiconductor |
| 441598 | GM71VS18163CLJ-5 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 50ns | Hynix Semiconductor |
| 441599 | GM71VS18163CLJ-6 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 60ns | Hynix Semiconductor |
| 441600 | GM71VS18163CLJ-7 | 1M Worte x 16 Bit CMOS dynamischen RAM, 3,3 V, 70 ns | Hynix Semiconductor |
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