| Nr. | Nome da parte | Descrição | Fabricante |
| 201 | AS4C256K16F0-30JI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 30ns tempo de acesso RAS | Alliance Semiconductor |
| 202 | AS4C256K16F0-30TC | 5V 256K x 16 CM0S DRAM (modo de página rápida), 30ns tempo de acesso RAS | Alliance Semiconductor |
| 203 | AS4C256K16F0-30TI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 30ns tempo de acesso RAS | Alliance Semiconductor |
| 204 | AS4C256K16F0-35JC | 5V 256K x 16 CM0S DRAM (modo de página rápida), 35ns tempo de acesso RAS | Alliance Semiconductor |
| 205 | AS4C256K16F0-35JI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 35ns tempo de acesso RAS | Alliance Semiconductor |
| 206 | AS4C256K16F0-35TC | 5V 256K x 16 CM0S DRAM (modo de página rápida), 35ns tempo de acesso RAS | Alliance Semiconductor |
| 207 | AS4C256K16F0-35TI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 35ns tempo de acesso RAS | Alliance Semiconductor |
| 208 | AS4C256K16F0-50JC | 5V 256K x 16 CM0S DRAM (modo de página rápida), 50ns tempo de acesso RAS | Alliance Semiconductor |
| 209 | AS4C256K16F0-50JI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 50ns tempo de acesso RAS | Alliance Semiconductor |
| 210 | AS4C256K16F0-50TC | 5V 256K x 16 CM0S DRAM (modo de página rápida), 50ns tempo de acesso RAS | Alliance Semiconductor |
| 211 | AS4C256K16F0-50TI | 5V 256K x 16 CM0S DRAM (modo de página rápida), 50ns tempo de acesso RAS | Alliance Semiconductor |
| 212 | AS4C256K16FO | 5V 256K x DRAM de 16 CMOS (modalidade rápida da página) | Alliance Semiconductor |
| 213 | AS4C4M4E1Q | 4M x 4 família do DRAM do CMOS QuadCAS (EDO) | Alliance Semiconductor |
| 214 | AS4C4M4EOQ | 4M x 4 família do DRAM do CMOS QuadCAS (EDO) | Alliance Semiconductor |
| 215 | AS4C4M4F0 | DRAM do CMOS de 5V 4M x 4 (modalidade rápida da página) | Alliance Semiconductor |
| 216 | AS4C4M4F1 | DRAM do CMOS de 5V 4M x 4 (modalidade rápida da página) | Alliance Semiconductor |
| 217 | AS4LC1M16E5 | 3V 1M x DRAM de 16 CMOS (EDO) | Alliance Semiconductor |
| 218 | AS4LC1M16E5-50JC | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 219 | AS4LC1M16E5-50JI | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 220 | AS4LC1M16E5-50TC | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 221 | AS4LC1M16E5-50TI | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 222 | AS4LC1M16E5-60JC | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 223 | AS4LC1M16E5-60JI | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 224 | AS4LC1M16E5-60TC | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 225 | AS4LC1M16E5-60TI | 3V 1M X DRAM De 6 Cmos (EDO) | Alliance Semiconductor |
| 226 | AS4LC1M16S1 | DRAM synchronous de 3.3V 2Mx8/1Mx16 CMOS | Alliance Semiconductor |
| 227 | AS4LC256K16E0-35JC | 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS tempo de acesso | Alliance Semiconductor |
| 228 | AS4LC256K16E0-35TC | 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS tempo de acesso | Alliance Semiconductor |
| 229 | AS4LC256K16E0-45JC | 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS tempo de acesso | Alliance Semiconductor |
| 230 | AS4LC256K16E0-45TC | 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS tempo de acesso | Alliance Semiconductor |
| 231 | AS4LC256K16E0-60JC | 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS tempo de acesso | Alliance Semiconductor |
| 232 | AS4LC256K16E0-60TC | 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS tempo de acesso | Alliance Semiconductor |
| 233 | AS4LC256K16EO | 3.3V 256K x DRAM de 16 CMOS (EDO) | Alliance Semiconductor |
| 234 | AS4LC2M8S1 | DRAM synchronous de 3.3V 2Mx8/1Mx16 CMOS | Alliance Semiconductor |
| 235 | AS4LC4M16S0 | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 236 | AS4LC4M16S0 | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 237 | AS4LC4M16S0-10FTC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 238 | AS4LC4M16S0-10TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 239 | AS4LC4M16S0-75TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 240 | AS4LC4M16S0-8TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 241 | AS4LC4M4E0 | família do DRAM de 4M x 4 CMOS (EDO) | Alliance Semiconductor |
| 242 | AS4LC4M4E1 | família do DRAM de 4M x 4 CMOS (EDO) | Alliance Semiconductor |
| 243 | AS4LC8M8S0 | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 244 | AS4LC8M8S0 | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 245 | AS4LC8M8S0-10FTC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 246 | AS4LC8M8S0-10TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 247 | AS4LC8M8S0-75TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 248 | AS4LC8M8S0-8TC | DRAM synchronous de 3.3V 4Mx16 e de 8Mx8 CMOS | Alliance Semiconductor |
| 249 | AS6UA25616 | 2.3V a 3.6V 256K x 16 Intelliwatt CMOS low-power SRAM com uma microplaqueta permitem | Alliance Semiconductor |
| 250 | AS6UA25616-BC | 2.3V a 3.6V 256K..16 Intelliwatt.?ow-power CMOS SRAM com uma microplaqueta permitem | Alliance Semiconductor |
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