| Nr. | Teilname | Beschreibung | Hersteller |
| 201 | AS4C256K16F0-30JI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 30ns RAS-Zugriffszeit | Alliance Semiconductor |
| 202 | AS4C256K16F0-30TC | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 30ns RAS-Zugriffszeit | Alliance Semiconductor |
| 203 | AS4C256K16F0-30TI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 30ns RAS-Zugriffszeit | Alliance Semiconductor |
| 204 | AS4C256K16F0-35JC | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 205 | AS4C256K16F0-35JI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 206 | AS4C256K16F0-35TC | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 207 | AS4C256K16F0-35TI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 208 | AS4C256K16F0-50JC | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 50ns RAS-Zugriffszeit | Alliance Semiconductor |
| 209 | AS4C256K16F0-50JI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 50ns RAS-Zugriffszeit | Alliance Semiconductor |
| 210 | AS4C256K16F0-50TC | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 50ns RAS-Zugriffszeit | Alliance Semiconductor |
| 211 | AS4C256K16F0-50TI | 5V 256K x 16 CM0S DRAM (schnellen Seitenmodus), 50ns RAS-Zugriffszeit | Alliance Semiconductor |
| 212 | AS4C256K16FO | 5V 256K x 16 CMOS DRAM (schneller Seite Modus) | Alliance Semiconductor |
| 213 | AS4C4M4E1Q | 4M x 4 CMOS QuadCAS Familie des DRAM (EDO) | Alliance Semiconductor |
| 214 | AS4C4M4EOQ | 4M x 4 CMOS QuadCAS Familie des DRAM (EDO) | Alliance Semiconductor |
| 215 | AS4C4M4F0 | 5V 4M x 4 CMOS DRAM (schneller Seite Modus) | Alliance Semiconductor |
| 216 | AS4C4M4F1 | 5V 4M x 4 CMOS DRAM (schneller Seite Modus) | Alliance Semiconductor |
| 217 | AS4LC1M16E5 | 3V 1M x 16 CMOS DRAM (EDO) | Alliance Semiconductor |
| 218 | AS4LC1M16E5-50JC | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 219 | AS4LC1M16E5-50JI | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 220 | AS4LC1M16E5-50TC | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 221 | AS4LC1M16E5-50TI | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 222 | AS4LC1M16E5-60JC | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 223 | AS4LC1M16E5-60JI | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 224 | AS4LC1M16E5-60TC | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 225 | AS4LC1M16E5-60TI | 3V 1M X 6 Cmos DRAM (EDO) | Alliance Semiconductor |
| 226 | AS4LC1M16S1 | 3.3V 2Mx8/1Mx16 CMOS synchroner DRAM | Alliance Semiconductor |
| 227 | AS4LC256K16E0-35JC | 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 228 | AS4LC256K16E0-35TC | 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS-Zugriffszeit | Alliance Semiconductor |
| 229 | AS4LC256K16E0-45JC | 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS-Zugriffszeit | Alliance Semiconductor |
| 230 | AS4LC256K16E0-45TC | 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS-Zugriffszeit | Alliance Semiconductor |
| 231 | AS4LC256K16E0-60JC | 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS-Zugriffszeit | Alliance Semiconductor |
| 232 | AS4LC256K16E0-60TC | 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS-Zugriffszeit | Alliance Semiconductor |
| 233 | AS4LC256K16EO | 3.3V 256K x 16 CMOS DRAM (EDO) | Alliance Semiconductor |
| 234 | AS4LC2M8S1 | 3.3V 2Mx8/1Mx16 CMOS synchroner DRAM | Alliance Semiconductor |
| 235 | AS4LC4M16S0 | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 236 | AS4LC4M16S0 | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 237 | AS4LC4M16S0-10FTC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 238 | AS4LC4M16S0-10TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 239 | AS4LC4M16S0-75TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 240 | AS4LC4M16S0-8TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 241 | AS4LC4M4E0 | 4M x 4 CMOS DRAM (EDO) Familie | Alliance Semiconductor |
| 242 | AS4LC4M4E1 | 4M x 4 CMOS DRAM (EDO) Familie | Alliance Semiconductor |
| 243 | AS4LC8M8S0 | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 244 | AS4LC8M8S0 | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 245 | AS4LC8M8S0-10FTC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 246 | AS4LC8M8S0-10TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 247 | AS4LC8M8S0-75TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 248 | AS4LC8M8S0-8TC | 3.3V 4Mx16 und 8Mx8 CMOS synchroner DRAM | Alliance Semiconductor |
| 249 | AS6UA25616 | 2.3V zu 3.6V 256K x 16 Intelliwatt Niederleistungs-CMOS SRAM mit einem Span ermöglichen | Alliance Semiconductor |
| 250 | AS6UA25616-BC | 2.3V zu 3.6V 256K..16 Intelliwatt.?ow-power CMOS SRAM mit einem Span ermöglichen | Alliance Semiconductor |
| | | |
