Nr. | Teilname | Beschreibung | Hersteller |
250001 | BC32840BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250002 | BC32840TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250003 | BC328A | 0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.800A Ic, 100-400 hFE | Continental Device India Limited |
250004 | BC328BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250005 | BC328TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250006 | BC328TAR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250007 | BC328TF | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250008 | BC328TFR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
250009 | BC337 | NPN Zwecktransistor | Philips |
250010 | BC337 | Schaltung und Verstärker-Anwendungen | Fairchild Semiconductor |
250011 | BC337 | Universeller Transistor | Korea Electronics (KEC) |
250012 | BC337 | Kleine Signal-Transistoren (NPN) | Vishay |
250013 | BC337 | Kleine Signal-Transistoren (NPN) | General Semiconductor |
250014 | BC337 | NPN Silikon Af Transistor | Infineon |
250015 | BC337 | Tranzystor ma.ej cz?otliwo.ci ma.ej mocy | Ultra CEMI |
250016 | BC337 | NPN Silikon-Epitaxial- Planarer Transistor | Honey Technology |
250017 | BC337 | NPN SILIKONAF MITTLERE ENERGIE TRANSISTOREN | Micro Electronics |
250018 | BC337 | NPN Silikon AF Transistoren (hohe niedrige Spannung Sättigung Kollektor-Emitter des Stromverstärkung hohe Kollektorstroms) | Siemens |
250019 | BC337 | Verstärker-Transistor | Motorola |
250020 | BC337 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250021 | BC337 | Silikon-Epitaxial- PlanarTransistors | Diotec Elektronische |
250022 | BC337 | NPN Silikon-Epitaxial- planarer Transistor für Schaltung und Verstärkeranwendungen | Semtech |
250023 | BC337 | 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100-630 hFE | Continental Device India Limited |
250024 | BC337 | Transistor. Schalt- und ampplifier Anwendungen. Geeignet für AF-Fahrer stagees und Leistungsendstufen. Kollektor-Basis VCBO = 50V. Kollektor-Emitter-Vceo = 45V. Emitter-Basis Vebo = 5V. Kollektor-Verlust Pc = 625mW. Collector Curren | USHA India LTD |
250025 | BC337-016 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250026 | BC337-025 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250027 | BC337-040 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250028 | BC337-16 | NPN Zwecktransistor | Philips |
250029 | BC337-16 | NPN Zweck-Verstärker | Fairchild Semiconductor |
250030 | BC337-16 | NPN Silikon AF Transistoren (hohe niedrige Spannung Sättigung Kollektor-Emitter des Stromverstärkung hohe Kollektorstroms) | Siemens |
250031 | BC337-16 | Verstärker-Transistor | Motorola |
250032 | BC337-16 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250033 | BC337-16 | Transistoren, Rf U. Af | Vishay |
250034 | BC337-16 | Silikon-Epitaxial- PlanarTransistors | Diotec Elektronische |
250035 | BC337-16 | 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100-250 hFE | Continental Device India Limited |
250036 | BC337-16 | Kleiner Signal-Transistor (NPN) | General Semiconductor |
250037 | BC337-16RL1 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250038 | BC337-16ZL1 | Transistor-Silikon-Plastik NPN | ON Semiconductor |
250039 | BC337-25 | NPN Zwecktransistor | Philips |
250040 | BC337-25 | NPN Zweck-Verstärker | Fairchild Semiconductor |
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