| Nr. | Nome da parte | Descrição | Fabricante |
| 882081 | MJE702T | PODER TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882082 | MJE702T | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882083 | MJE703 | Transistor Epitaxial De Darlington Do Silicone de PNP | Fairchild Semiconductor |
| 882084 | MJE703 | SILICONE COMPLEMENTAR DE 4.0 TRANSISTOR DE PODER DO AMPÈRE DARLINGTON 40 WATTS 50 WATTS | Motorola |
| 882085 | MJE703 | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882086 | MJE703 | -60 V, -4 A, epitaxial de silício NPN Darlington transistor | Samsung Electronic |
| 882087 | MJE703STU | Transistor Epitaxial De Darlington Do Silicone de PNP | Fairchild Semiconductor |
| 882088 | MJE703T | PODER TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882089 | MJE703T | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882090 | MJE710 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882091 | MJE710 | TRANSISTOR DE PODER PLÁSTICOS DO SILICONE COMPLEMENTAR | Central Semiconductor |
| 882092 | MJE711 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882093 | MJE711 | TRANSISTOR DE PODER PLÁSTICOS DO SILICONE COMPLEMENTAR | Central Semiconductor |
| 882094 | MJE712 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882095 | MJE712 | TRANSISTOR DE PODER PLÁSTICOS DO SILICONE COMPLEMENTAR | Central Semiconductor |
| 882096 | MJE720 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882097 | MJE720 | TRANSISTOR DE PODER PLÁSTICOS DO SILICONE COMPLEMENTAR | Central Semiconductor |
| 882098 | MJE721 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882099 | MJE721 | TRANSISTOR DE PODER PLÁSTICOS DO SILICONE COMPLEMENTAR | Central Semiconductor |
| 882100 | MJE722 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 882101 | MJE800 | Transistor Epitaxial De Darlington Do Silicone de NPN | Fairchild Semiconductor |
| 882102 | MJE800 | SILICONE COMPLEMENTAR DE 4.0 TRANSISTOR DE PODER DO AMPÈRE DARLINGTON 40 WATTS 50 WATTS | Motorola |
| 882103 | MJE800 | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882104 | MJE800 | Poder 4A 60V NPND | ON Semiconductor |
| 882105 | MJE800 | 60 V, 5 A, silício epitaxial transistor NPN Darlington | Samsung Electronic |
| 882106 | MJE800STU | Transistor Epitaxial De Darlington Do Silicone de NPN | Fairchild Semiconductor |
| 882107 | MJE800T | PODER TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882108 | MJE800T | SILICONE COMPLEMENTAR DE 4.0 TRANSISTOR DE PODER DO AMPÈRE DARLINGTON 40 WATTS 50 WATTS | Motorola |
| 882109 | MJE800T | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882110 | MJE801 | Transistor Epitaxial De Darlington Do Silicone de NPN | Fairchild Semiconductor |
| 882111 | MJE801 | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882112 | MJE801 | 60 V, 5 A, silício epitaxial transistor NPN Darlington | Samsung Electronic |
| 882113 | MJE801STU | Transistor Epitaxial De Darlington Do Silicone de NPN | Fairchild Semiconductor |
| 882114 | MJE801T | PODER TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882115 | MJE801T | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882116 | MJE802 | TRANSISTOR DO PODER DARLINGTON DO SILICONE NPN | ST Microelectronics |
| 882117 | MJE802 | TRANSISTOR DO PODER DARLINGTON DO SILICONE NPN | SGS Thomson Microelectronics |
| 882118 | MJE802 | SILICONE COMPLEMENTAR DE 4.0 TRANSISTOR DE PODER DO AMPÈRE DARLINGTON 40 WATTS 50 WATTS | Motorola |
| 882119 | MJE802 | Transistor De Poder Leaded Darlington | Central Semiconductor |
| 882120 | MJE802 | Transistor Epitaxial De Darlington Do Silicone de NPN | Fairchild Semiconductor |
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