Nr. | Nom de partie | Description | Fabricant |
201 | 1N4751 | 30 V, W une diode Zener de silicium | BKC International Electronics |
202 | 1N4751A | 30 V, W une diode Zener de silicium | BKC International Electronics |
203 | 1N4752 | 33 V, W une diode Zener de silicium | BKC International Electronics |
204 | 1N4752A | 33 V, W une diode Zener de silicium | BKC International Electronics |
205 | 1N476 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
206 | 1N477 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
207 | 1N478 | 100 V, 500 mA, diode germanium or collé | BKC International Electronics |
208 | 1N479 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
209 | 1N480 | 60 V, 500 mA, diode germanium or collé | BKC International Electronics |
210 | 1N490 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
211 | 1N4933 | 50 V, 1 A diode redresseur au silicium rapide | BKC International Electronics |
212 | 1N4934 | 100 V, une Diode redresseur au silicium rapide | BKC International Electronics |
213 | 1N4935 | 200 V, une Diode redresseur au silicium rapide | BKC International Electronics |
214 | 1N4936 | 400 V, une Diode redresseur au silicium rapide | BKC International Electronics |
215 | 1N4938 | 200 V, la diode de silicium de 250 mW | BKC International Electronics |
216 | 1N4938-1 | 200 V, la diode de commutation de silicium de 500 mW | BKC International Electronics |
217 | 1N497 | 30 V, 500 mA, diode germanium or collé | BKC International Electronics |
218 | 1N498 | 60 V, 500 mA, diode germanium or collé | BKC International Electronics |
219 | 1N499 | 75 V, 500 mA, diode germanium or collé | BKC International Electronics |
220 | 1N500 | 80 V, 500 mA, diode germanium or collé | BKC International Electronics |
221 | 1N501 | 100 V, 500 mA, diode germanium or collé | BKC International Electronics |
222 | 1N502 | 120 V, 500 mA, diode germanium or collé | BKC International Electronics |
223 | 1N5186 | 100 V, 3 W diode de redresseur au silicium | BKC International Electronics |
224 | 1N5194 | 70 V, la diode de silicium de 500 mW | BKC International Electronics |
225 | 1N5195 | 180 V, la diode de silicium de 500 mW | BKC International Electronics |
226 | 1N5196 | 225 V, la diode de silicium de 500 mW | BKC International Electronics |
227 | 1N5231A | 5.1 V, 500 mW diode Zener de silicium | BKC International Electronics |
228 | 1N5231B | 5.1 V, 500 mW diode Zener de silicium | BKC International Electronics |
229 | 1N527 | 10 V, 500 mA, diode germanium or collé | BKC International Electronics |
230 | 1N541 | 45 V, 500 mA, diode germanium or collé | BKC International Electronics |
231 | 1N542 | 45 V, 500 mA, diode germanium or collé | BKC International Electronics |
232 | 1N567 | 100 V, 500 mA, diode germanium or collé | BKC International Electronics |
233 | 1N568 | 7 V, 500 mA, diode germanium or collé | BKC International Electronics |
234 | 1N571 | 12 V, 500 mA, diode germanium or collé | BKC International Electronics |
235 | 1N5818 | 30 V, une puissance Diode de redressement Schottky | BKC International Electronics |
236 | 1N5819 | 40 V, une puissance Diode de redressement Schottky | BKC International Electronics |
237 | 1N6099 | BASSES DIODES DE FUITE DE CONDUCTIBILITÉ ÉLEVÉE | BKC International Electronics |
238 | 1N6099 | BASSES DIODES DE FUITE DE CONDUCTIBILITÉ ÉLEVÉE | BKC International Electronics |
239 | 1N616 | 20 V, 500 mA, diode germanium or collé | BKC International Electronics |
240 | 1N617 | 115 V, 500 mA, diode germanium or collé | BKC International Electronics |
241 | 1N618 | 115 V, 500 mA, diode germanium or collé | BKC International Electronics |
242 | 1N625 | 20 V, 500 mW diode à usage général | BKC International Electronics |
243 | 1N626 | 35 V, 500 mW diode à usage général | BKC International Electronics |
244 | 1N6263 | , La diode de barrière de Schottky de silicium de 400 mW 60 V | BKC International Electronics |
245 | 1N627 | 75 V, 500 mW diode à usage général | BKC International Electronics |
246 | 1N628 | 125 V, 500 mW diode à usage général | BKC International Electronics |
247 | 1N629 | 175 V, 500 mW diode à usage général | BKC International Electronics |
248 | 1N631 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
249 | 1N632 | 90 V, 500 mA, diode germanium or collé | BKC International Electronics |
250 | 1N633 | 120 V, 500 mA, diode germanium or collé | BKC International Electronics |
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