| Nr. | Teilname | Beschreibung | Hersteller |
| 250961 | BC637 | Universeller Transistor | Korea Electronics (KEC) |
| 250962 | BC637 | NPN Silikon Af Transistor | Infineon |
| 250963 | BC637 | SILIKON-TRANSISTOREN | Micro Electronics |
| 250964 | BC637 | NPN Silikon AF Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250965 | BC637 | Hohe Gegenwärtige Transistoren | Motorola |
| 250966 | BC637 | Hoher Gegenwärtiger Transistor | ON Semiconductor |
| 250967 | BC637 | 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40-160 hFE | Continental Device India Limited |
| 250968 | BC637 | Transistor. Schalt- und Verstärkeranwendungen. Vcer = 60V, Vces = 60V, Vceo = 60V, Vebo = 5V, Pc = 1W, Ic = 1A. | USHA India LTD |
| 250969 | BC637-16 | NPN mittlere Energie Transistoren | Philips |
| 250970 | BC637-16 | 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE | Continental Device India Limited |
| 250971 | BC637_D26Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250972 | BC637_D27Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250973 | BC637_D75Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250974 | BC637_L34Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250975 | BC638 | PNP mittlere Energie Transistoren | Philips |
| 250976 | BC638 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250977 | BC638 | Universeller Transistor | Korea Electronics (KEC) |
| 250978 | BC638 | PNP Silikon Af Transistor | Infineon |
| 250979 | BC638 | SILIKON-TRANSISTOREN | Micro Electronics |
| 250980 | BC638 | PNP Silikon AF Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 250981 | BC638 | Hohe Gegenwärtige Transistoren | Motorola |
| 250982 | BC638 | Transistor-Silikon-Plastik PNP | ON Semiconductor |
| 250983 | BC638 | 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40-160 hFE | Continental Device India Limited |
| 250984 | BC638 | Transistor. Schalt- und Verstärkeranwendungen. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. | USHA India LTD |
| 250985 | BC638-10 | 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE | Continental Device India Limited |
| 250986 | BC638-10 | PNP mittlere Leistungstransistoren | Philips |
| 250987 | BC638-16 | PNP mittlere Energie Transistoren | Philips |
| 250988 | BC638-16 | 0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE | Continental Device India Limited |
| 250989 | BC638BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250990 | BC638TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250991 | BC638TF | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250992 | BC638TFR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250993 | BC638ZL1 | Transistor-Silikon-Plastik PNP | ON Semiconductor |
| 250994 | BC639 | NPN mittlere Energie Transistoren | Philips |
| 250995 | BC639 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 250996 | BC639 | NPN SILIKON-PLANARER MITTLERER ENERGIE TRANSISTOR | Zetex Semiconductors |
| 250997 | BC639 | NPN Silikon Af Transistor | Infineon |
| 250998 | BC639 | SILIKON-TRANSISTOREN | Micro Electronics |
| 250999 | BC639 | NPN Silikon AF Transistoren (hoher Stromverstärkung hoher Kollektorstrom) | Siemens |
| 251000 | BC639 | Hohe Gegenwärtige Transistoren | Motorola |
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