| Nr. | Teilname | Beschreibung | Hersteller |
| 256561 | BD435 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
| 256562 | BD435 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256563 | BD435 | 36.000W Schalt NPN Plastic Leaded Transistor. 32V Vceo, 4.000A Ic, 50 hFE. | Continental Device India Limited |
| 256564 | BD435 | Plastic mittlerer Leistung Silizium NPN-Transistor. 4 A, 32 V. | Motorola |
| 256565 | BD435S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256566 | BD435STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256567 | BD436 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256568 | BD436 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256569 | BD436 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256570 | BD436 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256571 | BD436 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
| 256572 | BD436 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256573 | BD436 | 36.000W Schalt PNP Plastic Leaded Transistor. 32V Vceo, 4.000A Ic, 50 hFE. | Continental Device India Limited |
| 256574 | BD436 | Plastic mittlerer Leistung Silizium PNP-Transistor. 4 A, 32 V. | Motorola |
| 256575 | BD436S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256576 | BD436STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256577 | BD437 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256578 | BD437 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256579 | BD437 | SILIKON-EPITAXIAL- UNTERSEITE NPN ENERGIE TRANSISTOR | Micro Electronics |
| 256580 | BD437 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256581 | BD437 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256582 | BD437 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
| 256583 | BD437 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
| 256584 | BD437 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256585 | BD437 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
| 256586 | BD437 | 36.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 40 hFE. | Continental Device India Limited |
| 256587 | BD437-D | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
| 256588 | BD437S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256589 | BD437T | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
| 256590 | BD438 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256591 | BD438 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256592 | BD438 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256593 | BD438 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256594 | BD438 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
| 256595 | BD438 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
| 256596 | BD438 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256597 | BD438 | Energie 4A 45V PNP | ON Semiconductor |
| 256598 | BD438 | 36.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 40 hFE. | Continental Device India Limited |
| 256599 | BD438-D | Mittlerer Plastiktransistor Des Energie Silikon-PNP | ON Semiconductor |
| 256600 | BD438S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
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