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Datenblaetter Gefunden :: 1351360Seite: << | 7774 | 7775 | 7776 | 7777 | 7778 | 7779 | 7780 | 7781 | 7782 | 7783 | 7784 | >>
Nr.TeilnameBeschreibungHersteller
311121CF5760DACmos Analoge Taktgeber ISNippon Precision Circuits Inc
311122CF5760EACmos Analoge Taktgeber ISNippon Precision Circuits Inc
311123CF5760FCCmos Analoge Taktgeber ISNippon Precision Circuits Inc
311124CF5760HACmos Analoge Taktgeber ISNippon Precision Circuits Inc
311125CF5760JACmos Analoge Taktgeber ISNippon Precision Circuits Inc
311126CF739GaAs FET (N-Führung dual-gate GaAs MES FET)Siemens
311127CF745EPROM/ROM-Based 8-Bit Cmos Mikrocontroller-ReiheMicrochip
311128CF750GaAs MMIC (Voreingenommener DoppelgattergaAs Fet)Siemens
311129CF8140AEL Treiber ISNippon Precision Circuits Inc
311130CF8141AEL Blatt-TreiberNippon Precision Circuits Inc
311131CF8141BEL Blatt-TreiberNippon Precision Circuits Inc
311132CF8223AFsk Decoder und DTMF Empfänger ISNippon Precision Circuits Inc
311133CFA010119 dBm, 12 GHz, Allzweck GaAs FETCELERITEK
311134CFA0103LOW-NOISE GaAs FETSCELERITEK
311135CFA0207Carbon-Film-Widerstände, StandardVishay
311136CFA101225.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70-240 hFE. Ergänzende CFC2562Continental Device India Limited
311137CFA1012O25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70-140 hFE. Ergänzende CFC2562OContinental Device India Limited
311138CFA1012Y25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120-240 hFE. Ergänzende CFC2562YContinental Device India Limited
311139CFA10462.000W Leistung PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100-300 hFE. Ergänzende CFC2026Continental Device India Limited
311140CFA1046GR2.000W Leistung PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150-300 hFE. Ergänzende CFC2026GRContinental Device India Limited



311141CFA1046Y2.000W Leistung PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100-200 hFE. Ergänzende CFC2026YContinental Device India Limited
311142CFA130150.000W Leistung PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55-200 hFE. Ergänzende CFC3280Continental Device India Limited
311143CFA1301O50.000W Leistung PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80-200 hFE. Ergänzende CFC3280OContinental Device India Limited
311144CFA1301R50.000W Leistung PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55-110 hFE. Ergänzende CFC3280RContinental Device India Limited
311145CFA153515.000W Leistung PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95-220 hFE. Ergänzende CFC3944Continental Device India Limited
311146CFA1535A15.000W Leistung PNP Plastic Leaded Transistor. 180V Vceo, 1.000A Ic, 95-220 hFE. Ergänzende CFC3944AContinental Device India Limited
311147CFA1535AQ15.000W Leistung PNP Plastic Leaded Transistor. 180V Vceo, 1.000A Ic, 95-155 hFE. Ergänzende CFC3944AQContinental Device India Limited
311148CFA1535AR15.000W Leistung PNP Plastic Leaded Transistor. 180V Vceo, 1.000A Ic, 130-220 hFE. Ergänzende CFC3944ARContinental Device India Limited
311149CFA1535Q15.000W Leistung PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95-155 hFE. Ergänzende CFC3944QContinental Device India Limited
311150CFA1535R15.000W Leistung PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 130-220 hFE. Ergänzende CFC3944RContinental Device India Limited
311151CFB0101UNIVERSELLE GAAS FETSCELERITEK
311152CFB01030,7 dB, 12 GHz, geräuscharme GaAs FETCELERITEK
311153CFB03010,6 dB, High Dynamic Range rauscharmen GaAs FETCELERITEK
311154CFB0303Hoher Dynamikwerte Niedrig-Geräusche GaAs FetCELERITEK
311155CFB10632.000W Leistung PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60-200 hFE. Ergänzende CFD1499Continental Device India Limited
311156CFB1063P2.000W Leistung PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100-200 hFE. Ergänzende CFD1499PContinental Device India Limited
311157CFB1063Q2.000W Leistung PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60-120 hFE. Ergänzende CFD1499QContinental Device India Limited
311158CFB134260.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 500 hFE.Continental Device India Limited
311159CFB1370PNP Silikon-Epitaxial- Energie TransistorContinental Device India Limited
311160CFB15482.000W Leistung PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70-250 hFE. Ergänzende CFD2374Continental Device India Limited
Datenblaetter Gefunden :: 1351360Seite: << | 7774 | 7775 | 7776 | 7777 | 7778 | 7779 | 7780 | 7781 | 7782 | 7783 | 7784 | >>
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