| Nr. | Teilname | Beschreibung | Hersteller |
| 48161 | 2N6032 | Hochstrom, High-Power, High-Speed-Silizium-NPN-Transistor. | General Electric Solid State |
| 48162 | 2N6033 | NPN Transistor | Microsemi |
| 48163 | 2N6033 | Zweipolige NPN Vorrichtung | SemeLAB |
| 48164 | 2N6033 | Hochstrom, High-Power, High-Speed-Silizium-NPN-Transistor. | General Electric Solid State |
| 48165 | 2N6034 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48166 | 2N6034 | MIDIUM ENERGIE DAR;OMGTONS | ST Microelectronics |
| 48167 | 2N6034 | W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. | Continental Device India Limited |
| 48168 | 2N6034 | PNP mittlerer Leistung Darlington-Transistor, 4A, 40V | SGS Thomson Microelectronics |
| 48169 | 2N6035 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48170 | 2N6035 | Plastikdarlington Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 48171 | 2N6035 | MIDIUM ENERGIE DAR;OMGTONS | ST Microelectronics |
| 48172 | 2N6035 | PNP mittlerer Leistung Darlington-Transistor, 4A, 60V | SGS Thomson Microelectronics |
| 48173 | 2N6035-D | Plastikdarlington Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 48174 | 2N6036 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | ST Microelectronics |
| 48175 | 2N6036 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
| 48176 | 2N6036 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
| 48177 | 2N6036 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48178 | 2N6036 | Energie 4A 80V PNPD | ON Semiconductor |
| 48179 | 2N6036 | 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. | Continental Device India Limited |
| 48180 | 2N6037 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48181 | 2N6037 | MIDIUM ENERGIE DAR;OMGTONS | ST Microelectronics |
| 48182 | 2N6037 | 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750-15.000 hFE. | Continental Device India Limited |
| 48183 | 2N6037 | NPN mittlerer Leistung Darlington-Transistor, 4A, 40V | SGS Thomson Microelectronics |
| 48184 | 2N6038 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48185 | 2N6038 | Plastikdarlington Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 48186 | 2N6038 | MIDIUM ENERGIE DAR;OMGTONS | ST Microelectronics |
| 48187 | 2N6038 | 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750-15.000 hFE. | Continental Device India Limited |
| 48188 | 2N6038 | NPN mittlerer Leistung Darlington-Transistor, 4A, 60V | SGS Thomson Microelectronics |
| 48189 | 2N6039 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | ST Microelectronics |
| 48190 | 2N6039 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
| 48191 | 2N6039 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
| 48192 | 2N6039 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48193 | 2N6039 | Energie 4A 80V NPND | ON Semiconductor |
| 48194 | 2N6039 | W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. | Continental Device India Limited |
| 48195 | 2N6040 | ENERGIE TRANSISTORS(10A, 80w) | MOSPEC Semiconductor |
| 48196 | 2N6040 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48197 | 2N6040 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48198 | 2N6040 | Energie 8A 60V Darlington PNP | ON Semiconductor |
| 48199 | 2N6040-D | PlastikMittel-energie Ergänzende Silikon-Transistoren | ON Semiconductor |
| 48200 | 2N6041 | ENERGIE TRANSISTORS(10A, 80w) | MOSPEC Semiconductor |
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