| Nr. | Teilname | Beschreibung | Hersteller |
| 1162841 | STB6N65M2 | N-Kanal 650 V, 1,2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162842 | STB6N80K5 | N-Kanal 800 V, 1,3 Ohm typ. 4,5 A Zener-geschützt SuperMESH (TM) 5 Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162843 | STB6NA60 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162844 | STB6NA60 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162845 | STB6NA60 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162846 | STB6NA80 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162847 | STB6NA80 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162848 | STB6NA80 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162849 | STB6NB50 | N-CHANNEL VERBESSERUNG MODUSPOWERMESH MOSFET | ST Microelectronics |
| 1162850 | STB6NB50 | N - FÜHRUNG 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1162851 | STB6NB50T4 | N-CHANNEL VERBESSERUNG MODUSPOWERMESH MOSFET | ST Microelectronics |
| 1162852 | STB6NB90 | N - FÜHRUNG 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1162853 | STB6NB90 | N-CHANNEL Energie Mosfet | ST Microelectronics |
| 1162854 | STB6NC60 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK ENERGIE INEINANDERGREIFENCII MOSFET | ST Microelectronics |
| 1162855 | STB6NC60-1 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK ENERGIE INEINANDERGREIFENCII MOSFET | ST Microelectronics |
| 1162856 | STB6NC60-1 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK ENERGIE INEINANDERGREIFENCII MOSFET | SGS Thomson Microelectronics |
| 1162857 | STB6NC60T4 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK ENERGIE INEINANDERGREIFENCII MOSFET | ST Microelectronics |
| 1162858 | STB6NC80 | N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D©÷PAK/I©÷PAKZener-Schützte PowerMESH¢âIII Mosfet | ST Microelectronics |
| 1162859 | STB6NC80 | N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D©÷PAK/I©÷PAKZener-Schützte PowerMESH¢âIII Mosfet | ST Microelectronics |
| 1162860 | STB6NC80Z | N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162861 | STB6NC80Z-1 | N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162862 | STB6NC80Z-1 | N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET | SGS Thomson Microelectronics |
| 1162863 | STB6NC80ZT4 | N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162864 | STB6NC90Z | N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162865 | STB6NC90Z-1 | N-CHANNEL 900V - 1.55 OHM - 5.4A TO-220/FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162866 | STB6NC90Z-1 | N-CHANNEL 900V 1.55 OHM5.4A TO-220/TO-200FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET | SGS Thomson Microelectronics |
| 1162867 | STB6NK60Z | N-CHANNEL 600V 1 ENERGIE MOSFET DES OHM-6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH | ST Microelectronics |
| 1162868 | STB6NK60Z | N-CHANNEL 600V 1 ENERGIE MOSFET DES OHM-6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH | SGS Thomson Microelectronics |
| 1162869 | STB6NK60Z-1 | N-CHANNEL 600V 1 ENERGIE MOSFET DES OHM-6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH | ST Microelectronics |
| 1162870 | STB6NK60ZT4 | N-CHANNEL 600V 1 ENERGIE MOSFET DES OHM-6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH | ST Microelectronics |
| 1162871 | STB6NK90Z | N-CHANNEL 900V 1.75 ENERGIE MOSFET DES OHM-5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH | ST Microelectronics |
| 1162872 | STB6NK90ZT4 | N-CHANNEL 900V - 1.56W - 5.8A TO-220/FP/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1162873 | STB7001 | 900 MHZ DREI GEWINN-NIVEAU LNA | ST Microelectronics |
| 1162874 | STB7001 | 900 MHZ DREI GEWINN-NIVEAU LNA | SGS Thomson Microelectronics |
| 1162875 | STB7002 | 1.8 GIGAHERTZ DREI GEWINN-NIVEAU LNA | ST Microelectronics |
| 1162876 | STB7002 | 1.8 GIGAHERTZ DREI GEWINN-NIVEAU LNA | SGS Thomson Microelectronics |
| 1162877 | STB7002TR | 1.8 GIGAHERTZ DREI GEWINN-NIVEAU LNA | ST Microelectronics |
| 1162878 | STB7002TR | 1,8 GHZ DREI GAIN LEVEL LNA | SGS Thomson Microelectronics |
| 1162879 | STB7003 | TRI-BAND GSM/DCS/PCS LNA | ST Microelectronics |
| 1162880 | STB7003 | TRI-BAND GSM/DCS/PCS LNA | SGS Thomson Microelectronics |
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