| Nr. | Teilname | Beschreibung | Hersteller |
| 1162641 | STB36NF02L | N-CHANNEL 20V - 0.016 W - 36A D 2 PAK NIEDRIGER GATTER-AUFLADUNG STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162642 | STB36NF03L | N-CHANNEL 30V - 0.015 OHM - 36A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162643 | STB36NF03L | N-CHANNEL 30V - 0.015 OHM - 36A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162644 | STB36NF03L | N - FÜHRUNG 30V - 0.015 Ohm - 36A D 2 PAK NIEDRIGER GATTER-AUFLADUNG STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162645 | STB36NF03LT4 | N-CHANNEL 30V - 0.015 OHM - 36A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162646 | STB36NF06L | N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1162647 | STB36NF06LT4 | N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1162648 | STB36NM60N | Automotive-N-Kanal 600 V, 0.092 Ohm typ. 29 A MDmesh (TM) II Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162649 | STB36NM60ND | Automotive-N-Kanal 600 V, 0.097 Ohm typ. 29 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK Verpackung | ST Microelectronics |
| 1162650 | STB38N65M5 | N-Kanal 650 V, 0.073 Ohm typ. 30 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162651 | STB3N60-1 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162652 | STB3N60-1 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162653 | STB3NA60-1 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162654 | STB3NA80 | N-CHANNEL VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1162655 | STB3NA80 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162656 | STB3NB60 | N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH Mosfet | ST Microelectronics |
| 1162657 | STB3NB60 | N - FÜHRUNG 600V - 3.3 Ohm - 3.3A - D 2 PAK/I 2 PAK PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1162658 | STB3NB60T4 | N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH Mosfet | ST Microelectronics |
| 1162659 | STB3NC60 | N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFET | ST Microelectronics |
| 1162660 | STB3NC60 | N - FÜHRUNG 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II Mosfet | SGS Thomson Microelectronics |
| 1162661 | STB3NC60T4 | N-CHANNEL 600V - 3.3 OHM - 3A - D2PAK/I2PAK POWERMESH II MOSFET | ST Microelectronics |
| 1162662 | STB3NC90 | N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Schützte PowerMESH¢âIIIMosfet | ST Microelectronics |
| 1162663 | STB3NC90 | N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Schützte PowerMESH¢âIIIMosfet | ST Microelectronics |
| 1162664 | STB3NC90Z | N-CHANNEL 900V 3.2 OHM3.5A D2PAK ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162665 | STB3NC90Z | N-CHANNEL 900V 3.2 OHM3.5A D2PAK ZENER-PROTECTED POWERMESH III MOSFET | SGS Thomson Microelectronics |
| 1162666 | STB3NC90Z-1 | N-CHANNEL 900V 3.2 OHM3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET | ST Microelectronics |
| 1162667 | STB3NC90Z-1 | N-CHANNEL 900V 3.2 OHM3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET | SGS Thomson Microelectronics |
| 1162668 | STB3NK60Z | N-CHANNEL 600V - 3.3 OHM - 2.4A TO-220/TO-220FP/D2PAK/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1162669 | STB3NK60ZT4 | N-CHANNEL 600V - 3.3 OHM - 2.4A TO-220/TO-220FP/D2PAK/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1162670 | STB40N20 | N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK NIEDRIGERGATTER-AUFLADUNG STripFET Mosfet | ST Microelectronics |
| 1162671 | STB40N20 | N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK NIEDRIGERGATTER-AUFLADUNG STripFET Mosfet | ST Microelectronics |
| 1162672 | STB40N60M2 | N-Kanal 600 V, 0.078 Ohm typ. 34 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in TO-220FP-Paket | ST Microelectronics |
| 1162673 | STB40NE03L-20 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162674 | STB40NE03L-20 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162675 | STB40NE03L-20 | N - EIGENSCHAFT GRÖSSE ] Des FÜHRUNG VERBESSERUNG MODUS-?INGLE?OWER Mosfet | SGS Thomson Microelectronics |
| 1162676 | STB40NF03L | N-CHANNEL 30V - 0.020 OHM - 40A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162677 | STB40NF03L | N-CHANNEL 30V - 0.020 OHM - 40A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162678 | STB40NF03L | N - FÜHRUNG 30V - 0.020 Ohm - 40A D 2 PAK STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162679 | STB40NF10 | N-CHANNEL 100V - 0.024 OHM - 50A TO-220/D2PAK/I2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1162680 | STB40NF10 | N-CHANNEL 100V - 0.025 OHM - 40A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
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