| Nr. | Teilname | Beschreibung | Hersteller |
| 1166001 | STH16NA40FI | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1166002 | STH16NA40FI | N - FÜHRUNG 400V - 0.21W - 16A - ENERGIE TO-247/ISOWATT218 MOS TRANSISTOREN | SGS Thomson Microelectronics |
| 1166003 | STH16NA40FI | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1166004 | STH180N10F3-2 | N-Kanal 100 V, 3,9 mOhm, 180 A STripFET (TM) III Power MOSFET H2PAK-2 | ST Microelectronics |
| 1166005 | STH180N10F3-6 | N-Kanal 100 V, 3,9 mOhm, 180 A, H2PAK-6 STripFET (TM) III-Leistungs-MOSFET | ST Microelectronics |
| 1166006 | STH185N10F3-2 | Automotive-N-Kanal 100 V, 3,9 mOhm typ., 180 A STripFET (TM) III Power MOSFET H2PAK-2-Paket | ST Microelectronics |
| 1166007 | STH18NB40 | N-CHANNEL 400V 0.19 OHM18.4A TO-247/ISOWATT218 POWERMESH MOSFET | ST Microelectronics |
| 1166008 | STH18NB40FI | N-CHANNEL 400V 0.19 OHM18.4A TO-247/ISOWATT218 POWERMESH MOSFET | ST Microelectronics |
| 1166009 | STH18NB40FI | N-CHANNEL 400V - 0.19W - 18.4A TO-247/ISOWATT218 PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1166010 | STH18NB40FI | N-CHANNEL 400V 0.19 OHM18.4A TO-247/ISOWATT218 POWERMESH MOSFET | SGS Thomson Microelectronics |
| 1166011 | STH210N75F6-2 | N-Kanal-75 V, 0,0027 Ohm typ., 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166012 | STH240N10F7-2 | N-Kanal 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in einem H2PAK-2-Paket | ST Microelectronics |
| 1166013 | STH240N10F7-6 | N-Kanal 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in einem H2PAK-6-Paket | ST Microelectronics |
| 1166014 | STH240N75F3-2 | N-Kanal-75 V, 2,6 mOhm typ., 180 A STripFET (TM) III-Leistungs-MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166015 | STH240N75F3-6 | N-Kanal-75 V, 2,6 mOhm typ., 180 A STripFET (TM) III-Leistungs-MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166016 | STH245N75F3-6 | Automotive-N-Kanal-75 V, 2,6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166017 | STH250N55F3-6 | N-Kanal-55 V, 2,2 mOhm, 180 A, H2PAK, STripFET III-Leistungs-MOSFET | ST Microelectronics |
| 1166018 | STH260N6F6-2 | N-Kanal-60 V, 1,7 mOhm typ., 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166019 | STH260N6F6-6 | N-Kanal-60 V, 1,7 mOhm typ., 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166020 | STH270N4F3-2 | N-Kanal-40 V, 1,4 mOhm typ., 180 A STripFET (TM) III-Leistungs-MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166021 | STH270N4F3-6 | N-Kanal-40 V, 1,4 mOhm typ., 180 A STripFET (TM) III-Leistungs-MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166022 | STH270N8F7-2 | N-Kanal-80 V, 1,7 mOhm typ., 180 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166023 | STH270N8F7-6 | N-Kanal-80 V, 1,7 mOhm typ., 180 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166024 | STH300NH02L-6 | N-Kanal-24 V, 0,95 mOhm typ., 180 A STripFET (TM) Power MOSFET in einem H2PAK-6-Paket | ST Microelectronics |
| 1166025 | STH310N10F7-2 | N-Kanal 100 V, 1,9 mOhm typ., 180 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166026 | STH310N10F7-6 | N-Kanal 100 V, 1,9 mOhm typ., 180 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166027 | STH315N10F7-2 | Automotive-N-Kanal 100 V, 2,1 mOhm typ., 180 A STripFET F7 Power MOSFET | ST Microelectronics |
| 1166028 | STH315N10F7-6 | Automotive-N-Kanal 100 V, 2,1 mOhm typ., 180 A STripFET F7 Power MOSFET | ST Microelectronics |
| 1166029 | STH320N4F6-2 | N-Kanal-40 V, 1,1 mOhm typ., 200 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166030 | STH320N4F6-6 | N-Kanal-40 V, 1,1 mOhm typ., 200 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166031 | STH33N20 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1166032 | STH33N20 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1166033 | STH33N20FI | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1166034 | STH33N20FI | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1166035 | STH360N4F6-2 | N-Kanal-40 V, 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166036 | STH3N150-2 | N-Kanal 1500 V, 6 Ohm typ. 2,5 A PowerMESH (TM) Leistungs-MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166037 | STH400N4F6-2 | Automotive-N-Kanal-40 V, 0,85 mOhm typ., 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-2-Paket | ST Microelectronics |
| 1166038 | STH400N4F6-6 | Automotive-N-Kanal-40 V, 0,85 mOhm typ., 180 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in H2PAK-6-Paket | ST Microelectronics |
| 1166039 | STH4N90 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
| 1166040 | STH4N90 | N-CHANNEL VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | ST Microelectronics |
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