| Nr. | Teilname | Beschreibung | Hersteller |
| 1172321 | STL17N3LLH6 | N-Kanal-30 V, 0,0038 Ohm typ. 17 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 3.3 x 3.3 Paket | ST Microelectronics |
| 1172322 | STL17N65M5 | N-Kanal 650 V, 0.338 Ohm typ., 10 A MDmesh (TM) V-Leistungs-MOSFETs in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172323 | STL18N3LLH7 | N-Kanal-30 V, 0,0034 Ohm typ. 18 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 3.3 x 3.3 Paket | ST Microelectronics |
| 1172324 | STL18N55M5 | N-Kanal 550 V, 0.205 Ohm typ. 13 A MDmesh (TM) V-Leistungs-MOSFETs in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172325 | STL18N60M2 | N-Kanal 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in Powerflat 5x6 HV-Paket | ST Microelectronics |
| 1172326 | STL18N65M5 | N-Kanal 650 V, 0.215 Ohm typ, 15 A MDmesh (TM) V-Leistungs-MOSFETs in Powerflat (TM) 5x6 HV-Paket | ST Microelectronics |
| 1172327 | STL18NM60N | N-Kanal 600 V, 0,260 Ohm typ., 6 A MDmesh (TM) II Power MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172328 | STL19N65M5 | N-Kanal 650 V, 0.215 Ohm typ. 12,5 A MDmesh (TM) V-Leistungs-MOSFET in einem Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172329 | STL20DN10F7 | Dual-N-Kanal 100 V, 0.065 Ohm typ., 5 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6 Doppelinsel | ST Microelectronics |
| 1172330 | STL20NM20N | N-CHANNEL 200V 0.11 GATTER-AUFLADUNG MDMESH II DES OHM-20A POWERFLAT ULTRA NIEDRIGER MOSFET | ST Microelectronics |
| 1172331 | STL21N65M5 | N-Kanal 650 V, 0.175 Ohm, 2,7 A Powerflat (TM) 8x8 HV MDmesh (TM) V-Leistungs-MOSFET | ST Microelectronics |
| 1172332 | STL220N3LLH7 | N-Kanal-30 V, 0,00085 Ohm typ. 50 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172333 | STL22N65M5 | N-Kanal 650 V, 0.198 Ohm typ. 15 A MDmesh (TM) V-Leistungs-MOSFETs in Powerflat 8x8 HV-Paket | ST Microelectronics |
| 1172334 | STL22NF10 | N-CHANNEL 100V 0.055 GATTER-AUFLADUNG STRIPFET II DES OHM-22A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172335 | STL22NF10 | N-CHANNEL 100V 0.065 GATTER-AUFLADUNG STRIPFET II DES OHM-22A POWERFLAT NIEDRIGER MOSFET | SGS Thomson Microelectronics |
| 1172336 | STL23NM50N | N-Kanal 500 V, 0,170 Ohm typ. 14 A MDmesh (TM) II Power MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172337 | STL23NM60ND | N-Kanal 600 V, 0.175 Ohm, 19,5 A, FDmesh (TM) II Power MOSFET (mit schnellen Diode) in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172338 | STL23NS3LLH7 | N-Kanal-30 V, 0,0027 Ohm typ. 23 A STripFET (TM) VII DeepGATE (TM) Power MOSFET sowie monolithische Schottky in einer Powerflat (TM) 3.3 x 3.3 | ST Microelectronics |
| 1172339 | STL24N60M2 | N-Kanal 600 V, 0,186 Ohm typ. 18 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in einem Powerflat 8x8 HV-Paket | ST Microelectronics |
| 1172340 | STL24NM60N | N-Kanal 600 V, 0.200 Ohm typ. 16 A MDmesh (TM) II Power MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172341 | STL25DN10F7 | Dual-N-Kanal 100 V, 0.068 Ohm typ., 5 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6 Doppel Insel-Paket | ST Microelectronics |
| 1172342 | STL260N3LLH6 | N-Kanal-30 V, 0,0011 Ohm typ., 260 A STripFET H6 Power MOSFET in einem Powerflat 5x6-Paket | ST Microelectronics |
| 1172343 | STL26NM60N | N-Kanal 600 V, 0.160 Ohm typ. 19 A MDmesh (TM) II Power MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172344 | STL27N15 | N-CHANNEL 150V - 0.045 OHM - 27A POWERFLAT NIEDRIGER GATTER-AUFLADUNG STRIPFET MOSFET | ST Microelectronics |
| 1172345 | STL28NF3LL | N-CHANNEL 30V 0.0055 GATTER-AUFLADUNG STRIPFET II DES OHM-28A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172346 | STL28NF3LL | N-CHANNEL 30V 0.0055 GATTER-AUFLADUNG STRIPFET II DES OHM-28A POWERFLAT NIEDRIGER MOSFET | SGS Thomson Microelectronics |
| 1172347 | STL2N80K5 | N-Kanal 800 V, 3,7 Ohm typ., 2 A MDmesh K5 Power MOSFET in einem Powerflat 5x6 VHV-Paket | ST Microelectronics |
| 1172348 | STL30N10F7 | N-Kanal 100 V, 0.027 Ohm typ. 8 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172349 | STL30NF3LL | N-CHANNEL 30V 0.006 GATTER-AUFLADUNG STRIPFET II DES OHM-30A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172350 | STL30NF3LL | N-CHANNEL 30V 0.006 GATTER-AUFLADUNG STRIPFET II DES OHM-30A POWERFLAT NIEDRIGER MOSFET | SGS Thomson Microelectronics |
| 1172351 | STL30P3LLH6 | P-Kanal 30 V, 0,024 Ohm typ. 30 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172352 | STL31N65M5 | N-Kanal 650 V, 0.135 Ohm typ. 15 A MDmesh (TM) V-Leistungs-MOSFETs in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172353 | STL33N60M2 | N-Kanal 600 V, 0.115 Ohm typ. 21,5 A MDmesh M2 Power MOSFET in einem Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172354 | STL34N65M5 | N-Kanal 650 V, 0,99 Ohm typ. 22,5 A, MDmesh (TM) V-Leistungs-MOSFETs in einer Powerflat 8x8 HV | ST Microelectronics |
| 1172355 | STL34NF06 | N-CHANNEL 60V 0.024 GATTER-AUFLADUNG STRIPFET II DES OHM-34A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172356 | STL35N6F3 | N-Kanal-60 V, 0,019 Ohm, 10 A STripFET (TM) III-Leistungs-MOSFET in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172357 | STL35NF10 | N-CHANNEL 100V 0.025 GATTER-AUFLADUNG STRIPFET II DES OHM-35A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172358 | STL35NF10 | N-CHANNEL 100V 0.025 GATTER-AUFLADUNG STRIPFET II DES OHM-35A POWERFLAT NIEDRIGER MOSFET | SGS Thomson Microelectronics |
| 1172359 | STL35NF3LL | N-CHANNEL 30V 0.0055 GATTER-AUFLADUNG STRIPFET DES OHM-35A POWERFLAT NIEDRIGER MOSFET | ST Microelectronics |
| 1172360 | STL35NF3LL | N-CHANNEL 30V 0.0055 GATTER-AUFLADUNG STRIPFET DES OHM-35A POWERFLAT NIEDRIGER MOSFET | SGS Thomson Microelectronics |
| | | |
