| Nr. | Teilname | Beschreibung | Hersteller |
| 1172281 | STK795 | Zerhacker-Art Spannung Regler | SANYO |
| 1172282 | STK8250 | 50W MINIMALE AF ENERGIE AMPERE | SANYO |
| 1172283 | STK830F | Vorgerückter Energie Mosfet | AUK Corp |
| 1172284 | STK830FC | Vorgerückter Energie Mosfet | AUK Corp |
| 1172285 | STK85C161 | 2,5-3,5 V, die LCD-Controller | Syntek Semiconductor |
| 1172286 | STK88C2441 | 2,5-5,5 V, Voice-Controller | Syntek Semiconductor |
| 1172287 | STK88C4050 | 2,5-5,5 V, Voice-Controller | Syntek Semiconductor |
| 1172288 | STK88C4831 | 2,5-3,5 V, Voice-Controller | Syntek Semiconductor |
| 1172289 | STKM2000 | MISCHANALOG-DIGITAL STANDARD-ZELLEN Des 2m/2 POLY/2 METALLBICMOS | ST Microelectronics |
| 1172290 | STKM2000 | MISCHANALOG-DIGITAL STANDARD-ZELLEN Des 2m/2 POLY/2 METALLBICMOS | SGS Thomson Microelectronics |
| 1172291 | STKM2000-SERIES | 2 m/2 POLY/2 METALL BiCMOS, MISCHANALOG-DIGITAL STANDARD-ZELLEN | SGS Thomson Microelectronics |
| 1172292 | STL100N10F7 | N-Kanal 100 V, 0,0062 Ohm typ. 19 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172293 | STL100N1VH5 | N-Kanal-12 V, 0,0022 Ohm typ. 25 A STripFET (TM) V-Leistungs-MOSFETs in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172294 | STL100N6LF6 | N-Kanal-60 V, 0,0038 Ohm typ. 22 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172295 | STL105NS3LLH7 | N-Kanal-30 V, 0,0032 Ohm typ. 27 A STripFET (TM) VII DeepGATE (TM) Leistungs-MOSFETs und Schottky monolithische in einer Powerflat (TM) 5x6 | ST Microelectronics |
| 1172296 | STL10DN15F3 | N-Kanal 150 V, 0,20 Ohm typ. 2,8 A STripFET (TM) III-Leistungs-MOSFET in einem Powerflat (TM) 5x6 Doppel Insel-Paket | ST Microelectronics |
| 1172297 | STL10N3LLH5 | N-Kanal-30 V, 0,015 Ohm, 9 A, Powerflat (TM) 3.3x3.3 STripFET (TM) V-Leistungs-MOSFET | ST Microelectronics |
| 1172298 | STL10N60M2 | N-Kanal 600 V, 0,58 Ohm typ. 5,5 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in einem Powerflat (TM) 5x6 HV-Paket | ST Microelectronics |
| 1172299 | STL110N10F7 | N-Kanal 100 V, 0,0063 Ohm typ., 100 A STripFET (TM) VII DeepGATE (TM) Power MOSFET in einem Powerflat 5x6-Paket | ST Microelectronics |
| 1172300 | STL110NS3LLH7 | N-Kanal-30 V, 0,0027 Ohm typ. 28 A STripFET (TM) VII DeepGATE (TM) Leistungs-MOSFETs und Schottky monolithische in einer Powerflat (TM) 5x6 | ST Microelectronics |
| 1172301 | STL11N3LLH6 | N-Kanal-30 V, 0,006 Ohm typ. 11 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 3.3 x 3.3 Paket | ST Microelectronics |
| 1172302 | STL11N4LLF5 | N-Kanal-40 V, 9,1 mOhm typ. 15 A STripFET (TM) V in einer Powerflat (TM) 3.3x3.3 Paket | ST Microelectronics |
| 1172303 | STL120N2VH5 | N-Kanal-20 V, 0,002 Ohm, 28 A STripFET (TM) V-Leistungs-MOSFETs in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172304 | STL128D | Hochspannungs schnelle Schalt NPN-Leistungstransistor | ST Microelectronics |
| 1172305 | STL128DN | Hochspannung schnell schaltende NPN-Leistungstransistor | ST Microelectronics |
| 1172306 | STL128DNFP | Hochspannung schnell schaltende NPN-Leistungstransistor | ST Microelectronics |
| 1172307 | STL12N65M5 | N-Kanal 650 V, 0.475 Ohm typ. 8,5 A MDmesh (TM) V-Leistungs-MOSFETs in einer Powerflat (TM) 5x6 HV-Paket | ST Microelectronics |
| 1172308 | STL12P6F6 | P-Kanal 60 V, 0,13 Ohm typ. 3 A STripFET F6 Power MOSFET in einem Powerflat 5x6-Paket | ST Microelectronics |
| 1172309 | STL130N8F7 | N-Kanal-80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in einem Powerflat 5x6-Paket | ST Microelectronics |
| 1172310 | STL13DP10F6 | Dual-P-Kanal 100 V, 0.136 Ohm typ. 3,3 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in einem Powerflat (TM) 5x6 Doppelinsel | ST Microelectronics |
| 1172311 | STL13N60M2 | N-Kanal 600 V, 0,39 Ohm typ., 7 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in einem Powerflat 5x6 HV-Paket | ST Microelectronics |
| 1172312 | STL13NM60N | N-Kanal 600 V, 0,320 Ohm typ., 10 A MDmesh (TM) II Power MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
| 1172313 | STL140N4LLF5 | N-Kanal-40 V, 0,00275 Ohm, 32 A, Powerflat (TM) 5x6 STripFET (TM) V-Leistungs-MOSFET | ST Microelectronics |
| 1172314 | STL150N3LLH5 | N-Kanal-30 V, 0,0014 Ohm typ. 35 A STripFET (TM) V-Leistungs-MOSFETs in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172315 | STL150N3LLH6 | N-Kanal-30 V, 0,0016 Ohm typ. 33 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172316 | STL15DN4F5 | Automotive-Dual-N-Kanal-40 V, 8 mOhm typ. 15 A STripFET F5 Power MOSFET in Powerflat 5x6 Doppel Insel-Paket | ST Microelectronics |
| 1172317 | STL15N65M5 | N-Kanal 650 V, 0.335 Ohm typ., 10 A MDmesh (TM) V-Leistungs-MOSFETs in einer Powerflat (TM) 5x6 HV-Paket | ST Microelectronics |
| 1172318 | STL160N3LLH6 | N-Kanal-30 V, 0,0011 Ohm typ. 45 A STripFET (TM) H6 Power MOSFET in einem Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172319 | STL160NS3LLH7 | N-Kanal-30 V, 0,0016 Ohm typ., 160 A STripFET H7-Leistungs-MOSFETs und Schottky monolithische in einer Powerflat (TM) 5x6-Paket | ST Microelectronics |
| 1172320 | STL16N65M5 | N-Kanal 650 V, 0,27 Ohm typ., 2 A MDmesh (TM) V-Leistungs-MOSFET in Powerflat (TM) 8x8 HV-Paket | ST Microelectronics |
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