| Nr. | Teilname | Beschreibung | Hersteller |
| 252681 | BC858BWT1 | FALL 419-02, STYLE 3 SOT-323/SC-70 | Motorola |
| 252682 | BC858BWT1 | Universelle Transistoren | ON Semiconductor |
| 252683 | BC858C | SOT23 NPN SILIKON-PLANARE UNIVERSELLE TRANSISTOREN | Zetex Semiconductors |
| 252684 | BC858C | Zweipolige Transistoren | Diodes |
| 252685 | BC858C | Kleine Signal-Transistoren (PNP) | General Semiconductor |
| 252686 | BC858C | Universelle Transistoren - Paket SOT23 | Infineon |
| 252687 | BC858C | PNP Silikon AF Transistoren (für AF Eingang Stadien und Treiberanwendungen hohe Stromverstärkung niedrige Kollektor-Emitter Sättigung Spannung) | Siemens |
| 252688 | BC858C | PNP Kleiner Signal-Transistor 310mW | Micro Commercial Components |
| 252689 | BC858C | SMD Kleine Niedrige Geräusche Des Signal-Transistor-PNP | Central Semiconductor |
| 252690 | BC858C | Transistoren, Rf U. Af | Vishay |
| 252691 | BC858C | 0.250W General Purpose PNP SMD-Transistor. 30V Vceo, 0.100A Ic, 420-800 hFE. Ergänzende BC848C | Continental Device India Limited |
| 252692 | BC858C | Oberflächenmontage Si-Epitaxial PlanarTransistors | Diotec Elektronische |
| 252693 | BC858C | hfe min 420 NF max. 10 dB Transistorpolung PNP Aktuelle Ic dauernd max 100 mA Spannungs Vceo 30 V Strom Ic (HFE) 2 mA Leistung Ptot 350 mW | Fairchild Semiconductor |
| 252694 | BC858C | PNP-Transistor für allgemeine und Schaltanwendungen | Korea Electronics (KEC) |
| 252695 | BC858C | Ic = 100mA, VCE = 5,0V Transistor | MCC |
| 252696 | BC858C | 30 V, PNP Oberflächenmontagekleinsignaltransistor | TRANSYS Electronics Limited |
| 252697 | BC858C | 30 V, PNP Oberflächenmontagekleinsignaltransistor | TRSYS |
| 252698 | BC858C(Z) | SOT23 NPN SILIKON-PLANARE Zwecktransistoren | Diodes |
| 252699 | BC858C-3L | SOT23 PNP SILIKON-PLANARE UNIVERSELLE TRANSISTOREN | Unknow |
| 252700 | BC858C-3L | SOT23 PNP SILIKON-PLANARE UNIVERSELLE TRANSISTOREN | Unknow |
| 252701 | BC858C-7 | PNP OBERFLÄCHE EINFASSUNG KLEINER SIGNAL-TRANSISTOR | Diodes |
| 252702 | BC858C-7 | PNP OBERFLÄCHE EINFASSUNG KLEINER SIGNAL-TRANSISTOR | Diodes |
| 252703 | BC858C-7-F | Bipolare Transistoren | Diodes |
| 252704 | BC858CDW1 | Universelle Verdoppelungtransistoren | ON Semiconductor |
| 252705 | BC858CDW1T1 | Universelles Verdoppelungtransistors(PNP Verdoppelt) | Leshan Radio Company |
| 252706 | BC858CDW1T1 | Universelle Verdoppelungtransistoren | ON Semiconductor |
| 252707 | BC858CDXV6 | Universeller PNP Transistor | ON Semiconductor |
| 252708 | BC858CDXV6T1 | Universeller PNP Transistor | ON Semiconductor |
| 252709 | BC858CDXV6T5 | Universeller PNP Transistor | ON Semiconductor |
| 252710 | BC858CF | PNP Zwecktransistoren | Philips |
| 252711 | BC858CL | Universeller Transistor | ON Semiconductor |
| 252712 | BC858CLT1 | Universelles Transistors(PNP Silikon) | Leshan Radio Company |
| 252713 | BC858CLT1 | FALL 318-08, STYLE 6 SOT-23 (TO-236AB) | Motorola |
| 252714 | BC858CLT1 | Universeller Transistor | ON Semiconductor |
| 252715 | BC858CLT1G | Universelle Transistoren | ON Semiconductor |
| 252716 | BC858CLT1G | Universelles Transistors(PNP Silikon) | ON Semiconductor |
| 252717 | BC858CLT1G | Universelle Transistoren | ON Semiconductor |
| 252718 | BC858CLT1G | Universelles Transistors(PNP Silikon) | ON Semiconductor |
| 252719 | BC858CLT3 | Universeller Transistor | ON Semiconductor |
| 252720 | BC858CLT3G | Universelle Transistoren | ON Semiconductor |
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