| Nr. | Teilname | Beschreibung | Hersteller |
| 499321 | HM51S4260AZ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiï Random Access Memory | Hitachi Semiconductor |
| 499322 | HM51S4260AZ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit Dynamid Random Access Memory | Hitachi Semiconductor |
| 499323 | HM51S4260CJ-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiú Random Access Memory | Hitachi Semiconductor |
| 499324 | HM51S4260CJ-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144 Wörtern x 16 Bit Dynamic Random Access Memory | Hitachi Semiconductor |
| 499325 | HM51S4260CJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiß Random Access Memory | Hitachi Semiconductor |
| 499326 | HM51S4260CJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit-Dynamin-Lese-Speicher | Hitachi Semiconductor |
| 499327 | HM51S4260CLJ-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499328 | HM51S4260CLJ-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499329 | HM51S4260CLJ-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiõ Random Access Memory | Hitachi Semiconductor |
| 499330 | HM51S4260CLJ-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÓ Random Access Memory | Hitachi Semiconductor |
| 499331 | HM51S4260CLTT-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499332 | HM51S4260CLTT-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÌ Random Access Memory | Hitachi Semiconductor |
| 499333 | HM51S4260CLTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499334 | HM51S4260CLTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamie Random Access Memory | Hitachi Semiconductor |
| 499335 | HM51S4260CTT-6 | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiÎ Random Access Memory | Hitachi Semiconductor |
| 499336 | HM51S4260CTT-6R | 60ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamií Random Access Memory | Hitachi Semiconductor |
| 499337 | HM51S4260CTT-7 | 70ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiï Random Access Memory | Hitachi Semiconductor |
| 499338 | HM51S4260CTT-8 | 80ns; V (cc): -1,0 bis + 7,0 V; 50mA; 1W; 262.144-Wort x 16-Bit dynamiò Random Access Memory | Hitachi Semiconductor |
| 499339 | HM51S4800AJ-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499340 | HM51S4800AJ-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499341 | HM51S4800ALJ-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499342 | HM51S4800ALJ-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499343 | HM51S4800ALRR-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499344 | HM51S4800ALRR-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499345 | HM51S4800ALTT-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499346 | HM51S4800ALTT-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499347 | HM51S4800ARR-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499348 | HM51S4800ARR-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499349 | HM51S4800ATT-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499350 | HM51S4800ATT-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499351 | HM51S4800CJ-6 | 60ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499352 | HM51S4800CJ-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499353 | HM51S4800CJ-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499354 | HM51S4800CJI-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499355 | HM51S4800CJI-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499356 | HM51S4800CLJ-6 | 60ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499357 | HM51S4800CLJ-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499358 | HM51S4800CLJ-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499359 | HM51S4800CLJI-7 | 70ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
| 499360 | HM51S4800CLJI-8 | 80ns; V (cc): -1 bis + 7 V; 50mA; 1W; 524.288-Wort x 8-Bit dynamischen Direktzugriffsspeicher | Hitachi Semiconductor |
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