Nr. | Teilname | Beschreibung | Hersteller |
510201 | HY51V18163HGLJ-6 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 60ns, geringer Strom | Hynix Semiconductor |
510202 | HY51V18163HGLJ-7 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 70ns, geringer Strom | Hynix Semiconductor |
510203 | HY51V18163HGLT-5 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 50ns, geringer Strom | Hynix Semiconductor |
510204 | HY51V18163HGLT-6 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 60ns, geringer Strom | Hynix Semiconductor |
510205 | HY51V18163HGLT-7 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, 70ns, geringer Strom | Hynix Semiconductor |
510206 | HY51V18163HGT | 1M x EDO16Bit DRAM | Hynix Semiconductor |
510207 | HY51V18163HGT-5 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
510208 | HY51V18163HGT-6 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
510209 | HY51V18163HGT-7 | 1M x EDO16Bit DRAM | Hynix Semiconductor |
510210 | HY51V65163HG | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510211 | HY51V65163HGJ-45 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510212 | HY51V65163HGJ-5 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510213 | HY51V65163HGJ-6 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510214 | HY51V65163HGLJ-45 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 45ns, geringer Strom | Hynix Semiconductor |
510215 | HY51V65163HGLJ-5 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 50ns, geringer Strom | Hynix Semiconductor |
510216 | HY51V65163HGLJ-6 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 60ns, geringer Strom | Hynix Semiconductor |
510217 | HY51V65163HGLT-45 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 45ns, geringer Strom | Hynix Semiconductor |
510218 | HY51V65163HGLT-5 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 50ns, geringer Strom | Hynix Semiconductor |
510219 | HY51V65163HGLT-6 | 4m x 16Bit EDO DRAM, 3,3V, LVTTL-Schnittstelle, 60ns, geringer Strom | Hynix Semiconductor |
510220 | HY51V65163HGT-45 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510221 | HY51V65163HGT-5 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510222 | HY51V65163HGT-6 | 4M x 16Bit EDODRAM | Hynix Semiconductor |
510223 | HY51V7403HG | 4M x 4Bit EDODRAM | Hynix Semiconductor |
510224 | HY51VS17403HG | 4M x 4Bit EDODRAM | Hynix Semiconductor |
510225 | HY51VS17403HGJ-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns | Hynix Semiconductor |
510226 | HY51VS17403HGJ-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns | Hynix Semiconductor |
510227 | HY51VS17403HGJ-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns | Hynix Semiconductor |
510228 | HY51VS17403HGLJ-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns, geringer Strom | Hynix Semiconductor |
510229 | HY51VS17403HGLJ-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns, geringer Strom | Hynix Semiconductor |
510230 | HY51VS17403HGLJ-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns, geringer Strom | Hynix Semiconductor |
510231 | HY51VS17403HGLT-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns, geringer Strom | Hynix Semiconductor |
510232 | HY51VS17403HGLT-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns, geringer Strom | Hynix Semiconductor |
510233 | HY51VS17403HGLT-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns, geringer Strom | Hynix Semiconductor |
510234 | HY51VS17403HGT-5 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 50ns | Hynix Semiconductor |
510235 | HY51VS17403HGT-6 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 60ns | Hynix Semiconductor |
510236 | HY51VS17403HGT-7 | 4.194.304 Wörter x 4 bit EDO-RAM, 3,3 V, 70 ns | Hynix Semiconductor |
510237 | HY51VS18163HG | 1M x EDO16Bit DRAM | Hynix Semiconductor |
510238 | HY51VS18163HGJ-5 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, Eigenauffrischmodus, 50ns | Hynix Semiconductor |
510239 | HY51VS18163HGJ-6 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, Eigenauffrischmodus, 60ns | Hynix Semiconductor |
510240 | HY51VS18163HGJ-7 | Dynamic RAM organisiert 1.048.576 Wörter x 16bit, Eigenauffrischmodus, 70ns | Hynix Semiconductor |
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