Nr. | Teilname | Beschreibung | Hersteller |
1214561 | TIP106 | -80 V, -8 A, PNP Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
1214562 | TIP106 | 80 V, 8 A, PNP Silicon Power Darlington | TRANSYS Electronics Limited |
1214563 | TIP106 | -80 V, -8 A, 80 W, PNP Darlington-Silizium-Leistungstransistor | Texas Instruments |
1214564 | TIP107 | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
1214565 | TIP107 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | ST Microelectronics |
1214566 | TIP107 | PNP SILIKON-ENERGIE DARLINGTONS | Power Innovations |
1214567 | TIP107 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
1214568 | TIP107 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
1214569 | TIP107 | ENERGIE TRANSISTORS(8A, 60-100V, 80w) | MOSPEC Semiconductor |
1214570 | TIP107 | Energie Darlingtons für die lineare und Schaltung Anwendungen | Boca Semiconductor Corporation |
1214571 | TIP107 | DARLINGTON 8 AMPERE-ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Motorola |
1214572 | TIP107 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
1214573 | TIP107 | Energie 8A 100V PNP | ON Semiconductor |
1214574 | TIP107 | PNP SILIKON-ENERGIE DARLINGTONS | TRSYS |
1214575 | TIP107 | 80.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. | Continental Device India Limited |
1214576 | TIP107 | -100 V, -8 A, PNP Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
1214577 | TIP107 | 100 V, 8 A, PNP Silicon Power Darlington | TRANSYS Electronics Limited |
1214578 | TIP107 | -100 V, -8 A, 80 W, PNP Darlington-Silizium-Leistungstransistor | Texas Instruments |
1214579 | TIP107TU | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
1214580 | TIP110 | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
1214581 | TIP110 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | ST Microelectronics |
1214582 | TIP110 | NPN SILIKON-ENERGIE DARLINGTONS | Power Innovations |
1214583 | TIP110 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
1214584 | TIP110 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
1214585 | TIP110 | ENERGIE TRANSISTORS(2.0A, 60-100V, 50w) | MOSPEC Semiconductor |
1214586 | TIP110 | ERGÄNZENDE SILIKON-TRANSISTOREN DES PLASTIKMEDIUM-POWER | Boca Semiconductor Corporation |
1214587 | TIP110 | DARLINGTON 2 AMPERE-ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Motorola |
1214588 | TIP110 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
1214589 | TIP110 | PlastikMittel-energie Ergänzende Silikon-Transistoren | ON Semiconductor |
1214590 | TIP110 | 50.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 500 hFE. | Continental Device India Limited |
1214591 | TIP110 | 2A NPN Darlington-Leistungstransistor. 60V, 50W, Verstärkung von 1000 bei 1A. | General Electric Solid State |
1214592 | TIP110 | Darlington Silizium NPN-Leistungstransistor, 60V, 2A | Panasonic |
1214593 | TIP110 | 60 V, 2 A, epitaktischen Silizium NPN Darlington-Transistor | Samsung Electronic |
1214594 | TIP110 | 60 V, 4 A, 50 W, NPN Darlington-Silizium-Leistungstransistor | Texas Instruments |
1214595 | TIP110-D | PlastikMittel-energie Ergänzende Silikon-Transistoren | ON Semiconductor |
1214596 | TIP110TU | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
1214597 | TIP111 | NPN Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
1214598 | TIP111 | NPN SILIKON-ENERGIE DARLINGTONS | Power Innovations |
1214599 | TIP111 | ENERGIE TRANSISTORS(2.0A, 60-100V, 50w) | MOSPEC Semiconductor |
1214600 | TIP111 | ERGÄNZENDE SILIKON-TRANSISTOREN DES PLASTIKMEDIUM-POWER | Boca Semiconductor Corporation |
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