| Nr. | Teilname | Beschreibung | Hersteller |
| 255921 | BD138-6 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255922 | BD138-6 | 12.500W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40-100 hFE. Ergänzende BD137-6 | Continental Device India Limited |
| 255923 | BD13810S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255924 | BD13810STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255925 | BD13816S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255926 | BD13816STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255927 | BD1386S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255928 | BD1386STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255929 | BD139 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255930 | BD139 | NPN SILIKON-TRANSISTOREN | ST Microelectronics |
| 255931 | BD139 | Tranzystor ma.ej cz?otliwo.ci du.ej mocy | Ultra CEMI |
| 255932 | BD139 | NPN SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
| 255933 | BD139 | NPN SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
| 255934 | BD139 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255935 | BD139 | NPN Energie Transistoren | Philips |
| 255936 | BD139 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
| 255937 | BD139 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 255938 | BD139 | Energie 1.5A 80V NPN | ON Semiconductor |
| 255939 | BD139 | 12.500W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40-250 hFE. Ergänzende BD140 | Continental Device India Limited |
| 255940 | BD139-10 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255941 | BD139-10 | NPN Energie Transistoren | Philips |
| 255942 | BD139-10 | NPN SILIKON-TRANSISTOREN | ST Microelectronics |
| 255943 | BD139-10 | 12.500W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 63-160 hFE. Ergänzende BD140-10 | Continental Device India Limited |
| 255944 | BD139-16 | NPN Energie Transistoren | Philips |
| 255945 | BD139-16 | NPN SILIKON-TRANSISTOREN | ST Microelectronics |
| 255946 | BD139-16 | 12.500W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 100-250 hFE. Ergänzende BD140-16 | Continental Device India Limited |
| 255947 | BD139-25 | 12.500W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 160-400 hFE. Ergänzende BD140-25 | Continental Device India Limited |
| 255948 | BD139-6 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255949 | BD139-6 | 12.500W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40-100 hFE. Ergänzende BD140-6 | Continental Device India Limited |
| 255950 | BD13910S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255951 | BD13910STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255952 | BD13916S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255953 | BD13916STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255954 | BD1396S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255955 | BD1396STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255956 | BD140 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255957 | BD140 | PNP SILIKON-TRANSISTOREN | ST Microelectronics |
| 255958 | BD140 | Tranzystor ma.ej cz?otliwo.ci du.ej mocy | Ultra CEMI |
| 255959 | BD140 | PNP SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
| 255960 | BD140 | PNP SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
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