| Nr. | Teilname | Beschreibung | Hersteller |
| 882041 | MJE5731A | 1.0 SILIKON DER AMPERE-ENERGIE TRANSISTOR-PNP 300-350-400 VOLT 40 WATT | Motorola |
| 882042 | MJE5731A | Energie 1A 400V Getrenntes PNP | ON Semiconductor |
| 882043 | MJE5740 | ENERGIE DARLINGTON TRANSISTOREN 8 AMPERE 300- 350- 400 VOLT 80 WATT | Motorola |
| 882044 | MJE5740 | Energie 8A 300V Darlington NPN | ON Semiconductor |
| 882045 | MJE5740 | Energie 8A 300V Darlington NPN | ON Semiconductor |
| 882046 | MJE5740-D | NPN Silikon-Energie Darlington Transistoren | ON Semiconductor |
| 882047 | MJE5741 | ENERGIE DARLINGTON TRANSISTOREN 8 AMPERE 300- 350- 400 VOLT 80 WATT | Motorola |
| 882048 | MJE5742 | ENERGIE DARLINGTON TRANSISTOREN 8 AMPERE 300- 350- 400 VOLT 80 WATT | Motorola |
| 882049 | MJE5742 | Energie 8A 400V Darlington NPN | ON Semiconductor |
| 882050 | MJE5850 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE-PNP 300- 350- 400 VOLT 80 WATT | Motorola |
| 882051 | MJE5850 | Energie 8A 300V Getrenntes PNP | ON Semiconductor |
| 882052 | MJE5850-D | SWITCHMODE Reihe PNP Silikon-Energie Transistoren | ON Semiconductor |
| 882053 | MJE5851 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE-PNP 300- 350- 400 VOLT 80 WATT | Motorola |
| 882054 | MJE5851 | Energie 8A 350V Getrenntes PNP | ON Semiconductor |
| 882055 | MJE5852 | HOCHSPANNUNGSPNP ENERGIE TRANSISTOR | ST Microelectronics |
| 882056 | MJE5852 | HOCHSPANNUNGSPNP ENERGIE TRANSISTOR | SGS Thomson Microelectronics |
| 882057 | MJE5852 | SILIKON-ENERGIE TRANSISTOREN 8 AMPERE-PNP 300- 350- 400 VOLT 80 WATT | Motorola |
| 882058 | MJE5852 | Energie 8A 400V Getrenntes PNP | ON Semiconductor |
| 882059 | MJE700 | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882060 | MJE700 | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882061 | MJE700 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882062 | MJE700 | Energie 4A 60V PNPD | ON Semiconductor |
| 882063 | MJE700 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
| 882064 | MJE700-D | Plastikdarlington Ergänzende Silikon-Energie Transistoren | ON Semiconductor |
| 882065 | MJE700STU | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882066 | MJE700T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882067 | MJE700T | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882068 | MJE700T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882069 | MJE701 | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882070 | MJE701 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882071 | MJE701 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
| 882072 | MJE701STU | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882073 | MJE701T | ENERGIE TRANSISTORS(4.0A, 60-80V, 40w) | MOSPEC Semiconductor |
| 882074 | MJE701T | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882075 | MJE702 | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
| 882076 | MJE702 | 4.0 ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON DES AMPERE-DARLINGTON 40 WATT 50 WATT | Motorola |
| 882077 | MJE702 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 882078 | MJE702 | Energie 4A 80V PNPD | ON Semiconductor |
| 882079 | MJE702 | -60 V, -4 A, NPN Siliziumepitaxieschicht Darlington-Transistor | Samsung Electronic |
| 882080 | MJE702STU | PNP Epitaxial- Silikon Darlington Transistor | Fairchild Semiconductor |
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