| Nr. | Teilname | Beschreibung | Hersteller |
| 881921 | MJE253 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881922 | MJE253 | Energie 4A 100V PNP | ON Semiconductor |
| 881923 | MJE254 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Central Semiconductor |
| 881924 | MJE254 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | Central Semiconductor |
| 881925 | MJE270 | 2.0 AMPERE-ERGÄNZENDE ENERGIE DARLINGTON TRANSISTOREN 100 VOLT 15 WATT | Motorola |
| 881926 | MJE270 | Energie 2A 100V NPN Ergänzend | ON Semiconductor |
| 881927 | MJE270 | Energie 2A 100V NPN Ergänzend | ON Semiconductor |
| 881928 | MJE270 | 15.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 500 hFE. | Continental Device India Limited |
| 881929 | MJE270-D | Ergänzende Silikon-Energie Transistoren NPN | ON Semiconductor |
| 881930 | MJE271 | 2.0 AMPERE-ERGÄNZENDE ENERGIE DARLINGTON TRANSISTOREN 100 VOLT 15 WATT | Motorola |
| 881931 | MJE271 | Energie 2A 100V PNP | ON Semiconductor |
| 881932 | MJE271 | Energie 2A 100V PNP | ON Semiconductor |
| 881933 | MJE2801 | ENERGIE TRANSISTORS(10A /60V /75W) | MOSPEC Semiconductor |
| 881934 | MJE2801T | ENERGIE TRANSISTORS(10A, 60v, 75w) | MOSPEC Semiconductor |
| 881935 | MJE2801T | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881936 | MJE2901T | ENERGIE TRANSISTORS(10A, 60v, 75w) | MOSPEC Semiconductor |
| 881937 | MJE2901T | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881938 | MJE2955 | ENERGIE TRANSISTORS(10A, 60v, 75w) | MOSPEC Semiconductor |
| 881939 | MJE2955-G | Universal Transistor, V CBO = -70V, V CEO = -60V, V EBO = -5 V, I C = -10A | Comchip Technology |
| 881940 | MJE2955T | PNP Silikon-Transistor | Fairchild Semiconductor |
| 881941 | MJE2955T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881942 | MJE2955T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881943 | MJE2955T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881944 | MJE2955T | ENERGIE TRANSISTORS(10A, 60v, 75w) | MOSPEC Semiconductor |
| 881945 | MJE2955T | PNP PLANARES ENDVERSTÄRKER-DC DES SILIKON-TRANSISTOR(AUDIO ZUM DC KONVERTER) | Wing Shing Computer Components |
| 881946 | MJE2955T | SILIKON-EPITAXIAL- PLANARER TRANSISTOR | Wing Shing Computer Components |
| 881947 | MJE2955T | 10 AMPERE-ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN 60 VOLT 75 WATT | Motorola |
| 881948 | MJE2955T | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881949 | MJE2955T | Energie 10A 60V Getrenntes PNP | ON Semiconductor |
| 881950 | MJE2955T | 75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 10.000A Ic, 5 hFE. | Continental Device India Limited |
| 881951 | MJE2955T | -70 V, -10 A, PNP Silikon-Transistor | Samsung Electronic |
| 881952 | MJE2955T | PNP, Silizium Kunststoff-Leistungstransistor. Konzipiert für allgemeine Zwecke Schalt- und Verstärkeranwendung. Vceo = 60Vdc, Vcb = 70Vdc VEB = 5VDC Ic = 10Adc, PD = 75W. | USHA India LTD |
| 881953 | MJE2955T-D | Ergänzendes Silikon-Plastikenergie Transistoren | ON Semiconductor |
| 881954 | MJE2955TTU | PNP Silikon-Transistor | Fairchild Semiconductor |
| 881955 | MJE3055 | SILIKON-EPITAXIAL- PLANARER TRANSISTOR | Wing Shing Computer Components |
| 881956 | MJE3055 | 10 AMPERE-ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN 60 VOLT 75 WATT | Motorola |
| 881957 | MJE3055 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881958 | MJE3055T | NPN Silikon-Transistor | Fairchild Semiconductor |
| 881959 | MJE3055T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881960 | MJE3055T | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
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