Nr. | Nombre de la Parte | Descripción | Fabricante |
1198161 | TC58V64BFT | PEDACITOS de 64-mbit (los 8M x 8) Cmos NAND E2PROM | TOSHIBA |
1198162 | TC59 | The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply current | Microchip |
1198163 | TC593002ECB | Salida Baja, Regulador De Voltaje Negativo De la Salida | Microchip |
1198164 | TC593002ECB | Salida Baja, Regulador De Voltaje Negativo De la Salida | Microchip |
1198165 | TC593002ECBTR | Baja deserción, regulador negativo de voltaje de salida, 3.0V voltaje de salida | Microchip |
1198166 | TC595002ECB | Salida Baja, Regulador De Voltaje Negativo De la Salida | Microchip |
1198167 | TC595002ECB | Salida Baja, Regulador De Voltaje Negativo De la Salida | Microchip |
1198168 | TC595002ECBTR | Baja deserción, regulador negativo de voltaje de salida, 5.0V voltaje de salida | Microchip |
1198169 | TC59LM806CFT | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198170 | TC59LM806CFT-50 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198171 | TC59LM806CFT-55 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198172 | TC59LM806CFT-60 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198173 | TC59LM806CFTI | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198174 | TC59LM814CFT | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198175 | TC59LM814CFT-50 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198176 | TC59LM814CFT-55 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198177 | TC59LM814CFT-60 | red FCRAM o 8,388,608-WORDSx4BANKSx8-BITS red FCRAM de 4,194,304-WORDSx4 BANKSx16-BITS | TOSHIBA |
1198178 | TC59LM814CFTI | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198179 | TC59LM818DMB | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198180 | TC59LM818DMBI | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198181 | TC59LM836DKB | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198182 | TC59LM905AMB | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198183 | TC59LM906AMG | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198184 | TC59LM913AMB | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198185 | TC59LM914AMG | Red FCRAM<SUP>TM</SUP > | TOSHIBA |
1198186 | TC59S6404 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198187 | TC59S6404 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198188 | TC59S6404BFT | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198189 | TC59S6404BFT | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198190 | TC59S6404BFT-10 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198191 | TC59S6404BFT-10 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198192 | TC59S6404BFT-80 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198193 | TC59S6404BFT-80 | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198194 | TC59S6404BFT/BFTL-80 | ESPOLÓN DINÁMICO SÍNCRONO De 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S | TOSHIBA |
1198195 | TC59S6404BFT/BFTL-80 | ESPOLÓN DINÁMICO SÍNCRONO De 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S | TOSHIBA |
1198196 | TC59S6404BFT/BFTL10 | ESPOLÓN DINÁMICO SÍNCRONO De 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S | TOSHIBA |
1198197 | TC59S6404BFT/BFTL10 | ESPOLÓN DINÁMICO SÍNCRONO De 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S | TOSHIBA |
1198198 | TC59S6404BFTL | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198199 | TC59S6404BFTL | SILICIO DEL CIRCUITO INTEGRADO DEL MOS DIGITAL MONOLÍTICO | TOSHIBA |
1198200 | TC59S6404BFTL-10 | 4.194.304-palabras x 4BANKS x 4 bits de RAM dinámica sincrónica | TOSHIBA |
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