| Nr. | Teilname | Beschreibung | Hersteller |
| 1164401 | STD70N10F4 | N-Kanal 100 V, 0.015 Ohm, 60 A, STripFET (TM) DeepGATE (TM) Power MOSFET in DPAK | ST Microelectronics |
| 1164402 | STD70N6F3 | N-Kanal-60 V, 8,0 mOhm, 70 A DPAK | ST Microelectronics |
| 1164403 | STD70NH02L | N-CHANNEL 24V - 0.0062OHM - 60A - DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1164404 | STD70NH02L-1 | N-CHANNEL 24V - 0.0062OHM - 60A - DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1164405 | STD70NH02LT4 | N-CHANNEL 24V - 0.0062OHM - 60A - DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1164406 | STD70NS04ZL | N-Kanal-40V DPAK, Leistungs-MOSFETs | ST Microelectronics |
| 1164407 | STD75N3LLH6 | N-Kanal-30 V, 0,0042 Ohm, 75 A, DPAK STripFET (TM) VI DeepGATE (TM) Power MOSFET | ST Microelectronics |
| 1164408 | STD790A | MITTLERER GEGENWÄRTIGER HOHE LEISTUNG NIEDERSPANNUNG PNP TRANSISTOR | ST Microelectronics |
| 1164409 | STD790AT4 | MITTLERER GEGENWÄRTIGER HOHE LEISTUNG NIEDERSPANNUNG PNP TRANSISTOR | ST Microelectronics |
| 1164410 | STD7ANM60N | N-Kanal 600 V, 5 A, 0,84 Ohm typ., MDmesh (TM) II Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164411 | STD7N52DK3 | N-Kanal 525 V, 0,95 Ohm typ., 6 A SuperFREDmesh (TM) 3 Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164412 | STD7N52K3 | N-Kanal 525 V, 0,72 Ohm, 6 A, DPAK SuperMESH3 (TM) Power MOSFET | ST Microelectronics |
| 1164413 | STD7N60M2 | N-Kanal 600 V, 0,86 Ohm typ., 5 A MDmesh II Plus (TM) niedriger Qg Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164414 | STD7N65M2 | N-Kanal 650 V, 0,96 Ohm typ., 5 A MDmesh M2 Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
| 1164415 | STD7N80K5 | N-Kanal 800 V, 0,95 Ohm typ., 6 A Zener-geschützt SuperMESH (TM) 5 Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164416 | STD7NB20 | N-CHANNEL 200V 0.3 OHM7A DPAK/IPAK POWERMESH MOSFET | ST Microelectronics |
| 1164417 | STD7NB20 | N - FÜHRUNG VERBESSERUNG MODUS PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1164418 | STD7NB20-1 | N-CHANNEL 200V 0.3 OHM7A DPAK/IPAK POWERMESH MOSFET | ST Microelectronics |
| 1164419 | STD7NB20T4 | N-CHANNEL 200V 0.3 OHM7A DPAK/IPAK POWERMESH MOSFET | ST Microelectronics |
| 1164420 | STD7NK40 | N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Geschützter SuperMESH¢âPower Mosfet | ST Microelectronics |
| 1164421 | STD7NK40 | N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Geschützter SuperMESH¢âPower Mosfet | ST Microelectronics |
| 1164422 | STD7NK40 | N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Geschützter SuperMESH¢âPower Mosfet | ST Microelectronics |
| 1164423 | STD7NK40Z | N-CHANNEL 400V - 0.85 OHM - 5.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1164424 | STD7NK40Z-1 | N-CHANNEL 400V - 0.85 OHM - 5.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1164425 | STD7NK40ZT4 | N-CHANNEL 400V - 0.85 OHM - 5.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH ENERGIE MOSFET | ST Microelectronics |
| 1164426 | STD7NM60N | N-Kanal 600 V, 5 A, 0,84 Ohm MDmesh (TM) II Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164427 | STD7NM64N | N-Kanal-640 V, 5 A, 0,88 Ohm typ. MDmesh (TM) II Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
| 1164428 | STD7NM80 | N-Kanal 800 V, 0,95 Ohm, 6,5 A MDmesh (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164429 | STD7NM80-1 | N-Kanal 800 V, 0,95 Ohm, 6,5 A MDmesh (TM) Power MOSFET in IPAK Paket | ST Microelectronics |
| 1164430 | STD7NS20 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164431 | STD7NS20 | N - FÜHRUNG 200V - 0.35 Ohm - 7A - DPAK INEINANDERGREIFEN-TESTBLATTMOSFET | SGS Thomson Microelectronics |
| 1164432 | STD7NS20-1 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164433 | STD7NS20T4 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK/IPAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1164434 | STD80 | Zellenbibliothek-Einleitung 0.5 Mikron-STD80 | Samsung Electronic |
| 1164435 | STD80 | Zellenbibliothek-Inhalt 0.5 Mikron-STD80 | Samsung Electronic |
| 1164436 | STD80 | Zellenbibliothek-Eigenschaften 0.5 Mikron-STD80 | Samsung Electronic |
| 1164437 | STD80N10F7 | N-Kanal 100 V, 0,0085 Ohm typ. 70 A STripFET (TM) VII DeepGATE (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164438 | STD80N4F6 | Automotive-N-Kanal-40 V, 5,5 mOhm typ. 80 A, STripFET (TM) VI DeepGATE (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1164439 | STD80N6F6 | Automotive-N-Kanal-60 V, 4,4 mOhm typ. 80 A STripFET (TM) VI DeepGATE (TM) Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
| 1164440 | STD815CP40 | Komplementäre Transistorpaar in einem Paket | ST Microelectronics |
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