| Nr. | Teilname | Beschreibung | Hersteller |
| 255881 | BD137 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255882 | BD137 | Tranzystor ma.ej cz?otliwo.ci du.ej mocy | Ultra CEMI |
| 255883 | BD137 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255884 | BD137 | NPN Energie Transistoren | Philips |
| 255885 | BD137 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
| 255886 | BD137 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 255887 | BD137 | Energie 1.5A 60V NPN | ON Semiconductor |
| 255888 | BD137 | 12.500W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40-250 hFE. Ergänzende BD138 | Continental Device India Limited |
| 255889 | BD137 | hfe Min 40 Transistorpolung NPN Aktuelle Ic dauernd max 1 A Spannungs Vceo 60 V Gleichstrom Ic (HFE) 0,15 A Leistung Ptot 12,5 W Temperaturleistung 25? C Transistoren Zahl von 1 | SGS Thomson Microelectronics |
| 255890 | BD137-10 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255891 | BD137-10 | NPN Energie Transistoren | Philips |
| 255892 | BD137-10 | 12.500W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63-160 hFE. Ergänzende BD138-10 | Continental Device India Limited |
| 255893 | BD137-16 | NPN Energie Transistoren | Philips |
| 255894 | BD137-16 | 12.500W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100-250 hFE. Ergänzende BD138-16 | Continental Device India Limited |
| 255895 | BD137-25 | 12.500W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160-400 hFE. Ergänzende BD138-25 | Continental Device India Limited |
| 255896 | BD137-6 | NPN SILIKON-TRANSISTOREN | Siemens |
| 255897 | BD137-6 | 12.500W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40-100 hFE. Ergänzende BD138-6 | Continental Device India Limited |
| 255898 | BD13710S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255899 | BD13710STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255900 | BD13716S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255901 | BD13716STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255902 | BD1376S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255903 | BD1376STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255904 | BD138 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255905 | BD138 | PNP SILIKON-TRANSISTOREN | ST Microelectronics |
| 255906 | BD138 | Tranzystor ma.ej cz?otliwo.ci du.ej mocy | Ultra CEMI |
| 255907 | BD138 | PNP SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
| 255908 | BD138 | PNP SILIKON-TRANSISTOREN | SGS Thomson Microelectronics |
| 255909 | BD138 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255910 | BD138 | PNP Energie Transistoren | Philips |
| 255911 | BD138 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
| 255912 | BD138 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 255913 | BD138 | Energie 1.5A 60V PNP | ON Semiconductor |
| 255914 | BD138 | 12.500W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40-250 hFE. Ergänzende BD137 | Continental Device India Limited |
| 255915 | BD138-10 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255916 | BD138-10 | PNP Energie Transistoren | Philips |
| 255917 | BD138-10 | 12.500W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63-160 hFE. Ergänzende BD137-10 | Continental Device India Limited |
| 255918 | BD138-16 | PNP Energie Transistoren | Philips |
| 255919 | BD138-16 | 12.500W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100-250 hFE. Ergänzende BD137-16 | Continental Device India Limited |
| 255920 | BD138-25 | 12.500W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 160-400 hFE. Ergänzende BD137-25 | Continental Device India Limited |
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