| Nr. | Teilname | Beschreibung | Hersteller |
| 256081 | BD202 | Silikon-Ergänzende Transistoren Universeller Verstärker, Schalter | NTE Electronics |
| 256082 | BD202 | EPITAXIAL- NIEDRIGES SILIKON NPN UND PNP VERSAWATT TRANSISTOREN | General Semiconductor |
| 256083 | BD202 | 60.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Ergänzende BD201 | Continental Device India Limited |
| 256084 | BD202 | Epitaxial-Basis Silizium PNP VERSAWATT Transistor. -60V, 60W. | General Electric Solid State |
| 256085 | BD203 | EPITAXIAL- NIEDRIGES SILIKON NPN UND PNP VERSAWATT TRANSISTOREN | General Semiconductor |
| 256086 | BD203 | 60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Ergänzende BD204 | Continental Device India Limited |
| 256087 | BD203 | Epitaxial-Basis Silizium NPN VERSAWATT Transistor. 80V, 60W. | General Electric Solid State |
| 256088 | BD204 | EPITAXIAL- NIEDRIGES SILIKON NPN UND PNP VERSAWATT TRANSISTOREN | General Semiconductor |
| 256089 | BD204 | 60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Ergänzende BD203 | Continental Device India Limited |
| 256090 | BD204 | Epitaxial-Basis Silizium PNP VERSAWATT Transistor. -80 V, 60W. | General Electric Solid State |
| 256091 | BD205 | 10 SILIKON DES AMPERE-ENERGIE TRANSISTOR-NPN | Motorola |
| 256092 | BD206 | 10 SILIKON DES AMPERE-ENERGIE TRANSISTOR-PNP | Motorola |
| 256093 | BD207 | 10 SILIKON DES AMPERE-ENERGIE TRANSISTOR-NPN | Motorola |
| 256094 | BD208 | 10 SILIKON DES AMPERE-ENERGIE TRANSISTOR-PNP | Motorola |
| 256095 | BD230 | NPN Energie Transistor | Philips |
| 256096 | BD231 | PNP Energie Transistor | Philips |
| 256097 | BD233 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256098 | BD233 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256099 | BD233 | 25.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. | Continental Device India Limited |
| 256100 | BD233 | NPN Silizium-Leistungstransistor. 2 A, 45 V, 25 W. | Motorola |
| 256101 | BD233STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256102 | BD234 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256103 | BD234 | TRANSISTOR DES SILIKON-PNP | ST Microelectronics |
| 256104 | BD234 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256105 | BD234 | 25.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 25 hFE. | Continental Device India Limited |
| 256106 | BD234 | Plastic mittlerer Leistung Silizium PNP-Transistor. 2 A, 45 V, 25 W. | Motorola |
| 256107 | BD234 | SILICON PNP-Transistor | SGS Thomson Microelectronics |
| 256108 | BD234STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256109 | BD235 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256110 | BD235 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256111 | BD235 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256112 | BD235 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256113 | BD235 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256114 | BD235 | 25.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. | Continental Device India Limited |
| 256115 | BD235STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256116 | BD236 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256117 | BD236 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256118 | BD236 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256119 | BD236 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256120 | BD236 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
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