| Nr. | Teilname | Beschreibung | Hersteller |
| 256121 | BD236 | 25.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. | Continental Device India Limited |
| 256122 | BD236 | NPN Silizium-Leistungstransistor. 2 A, 60 V, 25 W. | Motorola |
| 256123 | BD236STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256124 | BD237 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256125 | BD237 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256126 | BD237 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256127 | BD237 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256128 | BD237 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
| 256129 | BD237 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256130 | BD237 | Energie 2A 80V NPN 25W | ON Semiconductor |
| 256131 | BD237 | 25.000W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. | Continental Device India Limited |
| 256132 | BD237-D | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
| 256133 | BD237STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256134 | BD238 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256135 | BD238 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256136 | BD238 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256137 | BD238 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256138 | BD238 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 256139 | BD238 | Energie 2A 80V PNP 25W | ON Semiconductor |
| 256140 | BD238 | 25.000W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. | Continental Device India Limited |
| 256141 | BD238 | Plastic mittlerer Leistung Silizium PNP-Transistor. 2 A, 80 V, 25 W. | Motorola |
| 256142 | BD238S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256143 | BD238STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256144 | BD239 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256145 | BD239 | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256146 | BD239 | 30.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. | Continental Device India Limited |
| 256147 | BD239 | Pro Elektronenleistungstransistor | General Electric Solid State |
| 256148 | BD239A | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256149 | BD239A | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256150 | BD239A | 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. | Continental Device India Limited |
| 256151 | BD239A | Pro Elektronenleistungstransistor | General Electric Solid State |
| 256152 | BD239ATU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256153 | BD239B | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256154 | BD239B | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256155 | BD239B | 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. | Continental Device India Limited |
| 256156 | BD239B | Pro Elektronenleistungstransistor | General Electric Solid State |
| 256157 | BD239BTU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256158 | BD239C | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256159 | BD239C | NPN SILIKON-ENERGIE TRANSISTOR | ST Microelectronics |
| 256160 | BD239C | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
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