| Nr. | Teilname | Beschreibung | Hersteller |
| 255961 | BD140 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255962 | BD140 | PNP Energie Transistoren | Philips |
| 255963 | BD140 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
| 255964 | BD140 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 255965 | BD140 | Energie 1.5A 80V PNP | ON Semiconductor |
| 255966 | BD140 | 12.500W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40-250 hFE. Ergänzende BD139 | Continental Device India Limited |
| 255967 | BD140 | 60V NPN Silizium-Transistor | Comset Semiconductors |
| 255968 | BD140-10 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255969 | BD140-10 | PNP Energie Transistoren | Philips |
| 255970 | BD140-10 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
| 255971 | BD140-10 | PNP SILIKON-TRANSISTOREN | ST Microelectronics |
| 255972 | BD140-10 | SILIKON DER ENERGIE TRANSISTOR-PNP | ON Semiconductor |
| 255973 | BD140-10 | 12.500W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 63-160 hFE. Ergänzende BD139-10 | Continental Device India Limited |
| 255974 | BD140-16 | PNP Energie Transistoren | Philips |
| 255975 | BD140-16 | PNP SILIKON-TRANSISTOREN | ST Microelectronics |
| 255976 | BD140-16 | 12.500W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 100-250 hFE. Ergänzende BD139-16 | Continental Device India Limited |
| 255977 | BD140-25 | 12.500W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 160-400 hFE. Ergänzende BD139-25 | Continental Device India Limited |
| 255978 | BD140-6 | PNP SILIKON-TRANSISTOREN | Siemens |
| 255979 | BD140-6 | 12.500W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40-100 hFE. Ergänzende BD139-6 | Continental Device India Limited |
| 255980 | BD14010S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255981 | BD14010STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255982 | BD14016S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255983 | BD14016STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255984 | BD1406S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255985 | BD1406STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255986 | BD142 | NPN Silikon-Transistor-Energie Linerar und Schaltung Anwendungen | Comset Semiconductors |
| 255987 | BD142 | NPN Silikon-Transistor-Energie Linerar und Schaltung Anwendungen | Comset Semiconductors |
| 255988 | BD142 | Silikon-NPN Hochleistungstransistor. 50V, 117W. | General Electric Solid State |
| 255989 | BD157 | NPN Epitxial Silikon-Transistor | Fairchild Semiconductor |
| 255990 | BD157 | Mittlerer Energie NPN Silikon-Plastiktransistor | Motorola |
| 255991 | BD157 | 20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0,500A Ic, 30-240 hFE. | Continental Device India Limited |
| 255992 | BD157STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255993 | BD158 | NPN Epitxial Silikon-Transistor | Fairchild Semiconductor |
| 255994 | BD158 | Mittlerer Energie NPN Silikon-Plastiktransistor | Motorola |
| 255995 | BD158 | 20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0,500A Ic, 30-240 hFE. | Continental Device India Limited |
| 255996 | BD158STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 255997 | BD159 | NPN Epitxial Silikon-Transistor | Fairchild Semiconductor |
| 255998 | BD159 | Mittlerer Energie NPN Silikon-Plastiktransistor | Motorola |
| 255999 | BD159 | Transistor-Silikon-Energie NPN | ON Semiconductor |
| 256000 | BD159 | 20.000W Leistung NPN Plastic Leaded Transistor. 350V Vceo, 0,500A Ic, 30-240 hFE. | Continental Device India Limited |
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