| Nr. | Teilname | Beschreibung | Hersteller |
| 256281 | BD242B | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256282 | BD242B | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256283 | BD242B | ENERGIE TRANSISTORS(3A, 40w) | MOSPEC Semiconductor |
| 256284 | BD242B | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTORSS | Boca Semiconductor Corporation |
| 256285 | BD242B | Ergänzendes Silikon-Plastikenergie Transistoren | Motorola |
| 256286 | BD242B | Energie 3A 80V PNP | ON Semiconductor |
| 256287 | BD242B | PNP SILIKON-ENERGIE TRANSISTOR | TRSYS |
| 256288 | BD242B | Epitaxial-Basis Silizium PNP VERSAWATT Transistor. Vcer -90V, 40W. | General Electric Solid State |
| 256289 | BD242B | 90 V PNP Silicon Power Transistor | TRANSYS Electronics Limited |
| 256290 | BD242B | PNP Silikon Kunststoff-Leistungstransistor. Konzipiert für den Einsatz in Mehrzweck-Schalt- und Verstärkeranwendungen. Vceo = 80VDC, Vces = 90Vdc VEB = 5VDC Ic = 3Adc, PD = 40W. | USHA India LTD |
| 256291 | BD242BFP | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256292 | BD242BFP | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256293 | BD242BFP | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256294 | BD242C | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256295 | BD242C | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 256296 | BD242C | PNP SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256297 | BD242C | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256298 | BD242C | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 256299 | BD242C | ENERGIE TRANSISTORS(3A, 40w) | MOSPEC Semiconductor |
| 256300 | BD242C | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTORSS | Boca Semiconductor Corporation |
| 256301 | BD242C | Ergänzendes Silikon-Plastikenergie Transistoren | Motorola |
| 256302 | BD242C | Energie 3A 100V PNP | ON Semiconductor |
| 256303 | BD242C | PNP SILIKON-ENERGIE TRANSISTOR | TRSYS |
| 256304 | BD242C | Epitaxial-Basis Silizium PNP VERSAWATT Transistor. Vcer -115V, 40W. | General Electric Solid State |
| 256305 | BD242C | 115 V, PNP Silizium-Leistungstransistor | TRANSYS Electronics Limited |
| 256306 | BD242C | PNP Silikon Kunststoff-Leistungstransistor. Konzipiert für den Einsatz in Mehrzweck-Schalt- und Verstärkeranwendungen. Vceo = 100VDC, Vces = 115Vdc VEB = 5VDC Ic = 3Adc, PD = 40W. | USHA India LTD |
| 256307 | BD242CTU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256308 | BD242TU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256309 | BD243 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256310 | BD243 | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256311 | BD243 | ENERGIE TRANSISTORS(6A, 65w) | MOSPEC Semiconductor |
| 256312 | BD243 | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 256313 | BD243 | 65.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 6.000A Ic, 30 hFE. | Continental Device India Limited |
| 256314 | BD243 | Epitaxial-Basis Silizium NPN VERSAWATT Transistor. Vcer 55V, 65W. | General Electric Solid State |
| 256315 | BD243A | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 256316 | BD243A | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 256317 | BD243A | ERGÄNZENDES SILIKON-PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 256318 | BD243A | ENERGIE TRANSISTOREN: UNIVERSELLE VERSTÄRKER-UND LOW-FREQUENCY SCHALTUNG ANWENDUNG | MOSPEC Semiconductor |
| 256319 | BD243A | 65.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 6.000A Ic, 30 hFE. | Continental Device India Limited |
| 256320 | BD243A | Epitaxial-Basis Silizium NPN VERSAWATT Transistor. Vcer 70V, 65W. | General Electric Solid State |
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