| Nr. | Teilname | Beschreibung | Hersteller |
| 331401 | CSB649AC | 20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100-200 hFE. | Continental Device India Limited |
| 331402 | CSB649B | 20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60-120 hFE. | Continental Device India Limited |
| 331403 | CSB649C | 20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100-200 hFE. | Continental Device India Limited |
| 331404 | CSB649D | 20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160-320 hFE. | Continental Device India Limited |
| 331405 | CSB772 | 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60-400 hFE. Ergänzende CSD882 | Continental Device India Limited |
| 331406 | CSB772E | 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200-400 hFE. Ergänzende CSD882E | Continental Device India Limited |
| 331407 | CSB772P | 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160-320 hFE. Ergänzende CSD882P | Continental Device India Limited |
| 331408 | CSB772Q | 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100-200 hFE. Ergänzende CSD882Q | Continental Device India Limited |
| 331409 | CSB772R | 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60-120 hFE. Ergänzende CSD882R | Continental Device India Limited |
| 331410 | CSB810 | 2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1.000-20.000 hFE. | Continental Device India Limited |
| 331411 | CSB817F | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331412 | CSB817F | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331413 | CSB817OF | 90.000W Leistung PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60-120 hFE. | Continental Device India Limited |
| 331414 | CSB817QF | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331415 | CSB817QF | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331416 | CSB817YF | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331417 | CSB817YF | TO-3P Völlig Lokalisierter Plastikpaket-Transistor CDIL | Continental Device India Limited |
| 331418 | CSB834 | 30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60-200 hFE. Ergänzende CSD880 | Continental Device India Limited |
| 331419 | CSB834O | 30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60-120 hFE. Ergänzende CSD880O | Continental Device India Limited |
| 331420 | CSB834Y | 30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100-200 hFE. Ergänzende CSD880Y | Continental Device India Limited |
| 331421 | CSB856 | 25.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 35-200 hFE. | Continental Device India Limited |
| 331422 | CSB856A | 25.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 35 - 70 hFE. | Continental Device India Limited |
| 331423 | CSB856B | 25.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60-120 hFE. | Continental Device India Limited |
| 331424 | CSB856C | 25.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 100-200 hFE. | Continental Device India Limited |
| 331425 | CSB857 | 40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 60-320 hFE. | Continental Device India Limited |
| 331426 | CSB857B | 40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 60-120 hFE. | Continental Device India Limited |
| 331427 | CSB857C | 40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 100-200 hFE. | Continental Device India Limited |
| 331428 | CSB857D | 40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 160-320 hFE. | Continental Device India Limited |
| 331429 | CSB858 | 40.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 60-320 hFE. | Continental Device India Limited |
| 331430 | CSB858B | 40.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 60-120 hFE. | Continental Device India Limited |
| 331431 | CSB858C | 40.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 100-200 hFE. | Continental Device India Limited |
| 331432 | CSB858D | 40.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 160-320 hFE. | Continental Device India Limited |
| 331433 | CSBFB1M00J58 | Single-Chip Mikrocontroller 8-Bit | NEC |
| 331434 | CSBFB1M00J58 | Single-Chip Mikrocontroller 8-Bit | NEC |
| 331435 | CSBLA1M | Technische Daten des keramischen Resonators | etc |
| 331436 | CSBLA1M | Technische Daten des keramischen Resonators | etc |
| 331437 | CSBLA1M00J58 | Single-Chip Mikrocontroller 8-Bit | NEC |
| 331438 | CSBLA1M00J58 | Single-Chip Mikrocontroller 8-Bit | NEC |
| 331439 | CSC | Dickfilm-Widerstand-Netze, einzeln in der Linie, überzogener SIP, Widerstand-Elemente geschützt durch Tough Epoxy die konforme Schicht, vorhanden im Beutel oder im Schlauch-Satz | Vishay |
| 331440 | CSC1008 | NPN/PNP EPITAXIAL- PLANARE SILIKON-TRANSISTOREN | Continental Device India Limited |
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