| Nr. | Teilname | Beschreibung | Hersteller |
| 47801 | 2N5633 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto3 | SemeLAB |
| 47802 | 2N5633 | SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 47803 | 2N5634 | Zweipolige NPN Vorrichtung | SemeLAB |
| 47804 | 2N5634 | SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 47805 | 2N5634 | Zweipolige NPN Vorrichtung | SemeLAB |
| 47806 | 2N5634 | SILIKON-ENERGIE TRANSISTOR | Central Semiconductor |
| 47807 | 2N5638 | N-Führung Schalter | Fairchild Semiconductor |
| 47808 | 2N5638 | JFET Zerhacker-Transistoren | ON Semiconductor |
| 47809 | 2N5638 | N-Kanal-JFET-Schalter | Intersil |
| 47810 | 2N5638-D | JFET Zerhacker-Transistoren N-Führung - Entleerung | ON Semiconductor |
| 47811 | 2N5638RLRA | JFET Zerhacker-Transistoren | ON Semiconductor |
| 47812 | 2N5638_D26Z | N-Führung Schalter | Fairchild Semiconductor |
| 47813 | 2N5639 | N-Führung Schalter | Fairchild Semiconductor |
| 47814 | 2N5639 | JFET Zerhacker-Transistoren | ON Semiconductor |
| 47815 | 2N5639 | N-Kanal-JFET-Schalter | Intersil |
| 47816 | 2N5639RLRA | JFET Zerhacker-Transistoren | ON Semiconductor |
| 47817 | 2N5639_D26Z | N-Führung Schalter | Fairchild Semiconductor |
| 47818 | 2N5639_D75Z | N-Führung Schalter | Fairchild Semiconductor |
| 47819 | 2N5640 | N-Führung JFETs | Taitron Components |
| 47820 | 2N5640 | N-Führung JFETs | Taitron Components |
| 47821 | 2N5640 | N-Kanal-JFET-Schalter | Intersil |
| 47822 | 2N5641 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47823 | 2N5641 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47824 | 2N5641 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 15W; VHF-Leistungstransistor | SGS Thomson Microelectronics |
| 47825 | 2N5642 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47826 | 2N5642 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47827 | 2N5642 | V (CEO): 35V; V (cb): 65V; V (eb): 4V; 3A; 30W; NPN Silizium RF-Leistungstransistor | Motorola |
| 47828 | 2N5642 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 30W; VHF-Leistungstransistor | SGS Thomson Microelectronics |
| 47829 | 2N5643 | NPN SILIKON-RF ENERGIE TRANSISTOR | Advanced Semiconductor |
| 47830 | 2N5643 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47831 | 2N5643 | NPN SILIKON-RF ENERGIE TRANSISTOR | Advanced Semiconductor |
| 47832 | 2N5643 | 7W/20W/40W, 28V, VHF ENERGIE TRANSISTOR | ST Microelectronics |
| 47833 | 2N5643 | V (CBO): 65V; V (CEO): 35V; V (EBO): 4V; 60W; VHF-Leistungstransistor | SGS Thomson Microelectronics |
| 47834 | 2N5655 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47835 | 2N5655 | Plastik-NPN Silikon Hoch-Spannung Energie Transistor | ON Semiconductor |
| 47836 | 2N5655-D | Plastik-NPN Silikon Hoch-Spannung Energie Transistor | ON Semiconductor |
| 47837 | 2N5656 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47838 | 2N5656 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 47839 | 2N5657 | TRANSISTOR DES SILIKON-NPN | ST Microelectronics |
| 47840 | 2N5657 | TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
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