Nr. | Teilname | Beschreibung | Hersteller |
881281 | MJ4035 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | ST Microelectronics |
881282 | MJ4035 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
881283 | MJ4035 | ERGÄNZENDE SILIKON-ENERGIE DARLINGTON TRANSISTOREN | SGS Thomson Microelectronics |
881284 | MJ4035 | ENERGIE TRANSISTORS(16A, 60-100V, 150w) | MOSPEC Semiconductor |
881285 | MJ4035 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
881286 | MJ4035 | 100V Darlington mittlerer Leistung komplementären Silizium-Transistor | Comset Semiconductors |
881287 | MJ4035 | Darlington NPN Silizium-Leistungstransistor. 100 V, 16 A, 150 W. | Motorola |
881288 | MJ410 | 5 SILIKON DES AMPERE-ENERGIE TRANSISTOR-NPN | Motorola |
881289 | MJ411 | Zweipolige NPN Vorrichtung | SemeLAB |
881290 | MJ413 | 10 Ampere NPN Silikon-Energie Transistoren 125W | Micro Commercial Components |
881291 | MJ413 | 10 SILIKON DER AMPERE-ENERGIE TRANSISTOR-NPN | Motorola |
881292 | MJ413 | Ic = 10A, VCE = 5,0V Transistor | MCC |
881293 | MJ420 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
881294 | MJ420S | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
881295 | MJ421 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
881296 | MJ421S | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
881297 | MJ423 | 10 Ampere NPN Silikon-Energie Transistoren 125W | Micro Commercial Components |
881298 | MJ423 | Ic = 10A, VCE = 5,0V Transistor | MCC |
881299 | MJ423 | Hochspannungs-NPN Silizium-Transistor | Motorola |
881300 | MJ423 | Hochspannungs-NPN Silikon-Transistor | ON Semiconductor |
881301 | MJ423-D | Hoch-Spannung NPN Silikon-Transistor | ON Semiconductor |
881302 | MJ431 | 10 Ampere NPN Silikon-Energie Transistoren 125W | Micro Commercial Components |
881303 | MJ431 | Ic = 10A, VCE = 5,0V Transistor | MCC |
881304 | MJ4502 | ENERGIE TRANSISTORS(30A, 100v, 200w) | MOSPEC Semiconductor |
881305 | MJ4502 | 30 SILIKON DES AMPERE-ENERGIE TRANSISTOR-PNP 100 VOLT 200 WATT | Motorola |
881306 | MJ4502 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
881307 | MJ4502 | Energie 30A 100V Getrenntes PNP | ON Semiconductor |
881308 | MJ4502 | Energie 30A 100V Getrenntes PNP | ON Semiconductor |
881309 | MJ4502 | ERGÄNZENDE HOHE ENERGIE TRANSISTOREN | ST Microelectronics |
881310 | MJ4502 | ZUSÄTZLICHE HOCHLeistungsTransistoren | SGS Thomson Microelectronics |
881311 | MJ4502 | PNP. Planar Siliziumtransistor. Audio-Leistungsverstärker DC-DC Wandler. | Wing Shing Computer Components |
881312 | MJ4502-D | Hoch-Energie PNP Silikon-Transistor | ON Semiconductor |
881313 | MJ4646 | Zweipolige PNP Vorrichtung | SemeLAB |
881314 | MJ490 | Zweipolige PNP Vorrichtung | SemeLAB |
881315 | MJ491 | Zweipolige PNP Vorrichtung | SemeLAB |
881316 | MJ802 | ENERGIE TRANSISTORS(30A, 100v, 200w) | MOSPEC Semiconductor |
881317 | MJ802 | NPN PLANARES ENDVERSTÄRKER-DC DES SILIKON-TRANSISTOR(AUDIO ZUM DC KONVERTER) | Wing Shing Computer Components |
881318 | MJ802 | 30 SILIKON DES AMPERE-ENERGIE TRANSISTOR-NPN 100 VOLT 200 WATT | Motorola |
881319 | MJ802 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
881320 | MJ802 | Energie 30A 90V Getrenntes NPN | ON Semiconductor |
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