| Nr. | Nombre de la Parte | Descripción | Fabricante |
| 882081 | MJE702T | ENERGÍA TRANSISTORS(4.0A, 60-80v, 40w) | MOSPEC Semiconductor |
| 882082 | MJE702T | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882083 | MJE703 | Transistor Epitaxial De Darlington Del Silicio de PNP | Fairchild Semiconductor |
| 882084 | MJE703 | SILICIO COMPLEMENTARIO DE 4,0 DEL AMPERIO DARLINGTON TRANSISTORES DE ENERGÍA 40 VATIOS 50 VATIOS | Motorola |
| 882085 | MJE703 | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882086 | MJE703 | -60 V, -4 A, epitaxial de silicio NPN Darlington transistor | Samsung Electronic |
| 882087 | MJE703STU | Transistor Epitaxial De Darlington Del Silicio de PNP | Fairchild Semiconductor |
| 882088 | MJE703T | ENERGÍA TRANSISTORS(4.0A, 60-80v, 40w) | MOSPEC Semiconductor |
| 882089 | MJE703T | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882090 | MJE710 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882091 | MJE710 | TRANSISTORES DE ENERGÍA PLÁSTICOS DEL SILICIO COMPLEMENTARIO | Central Semiconductor |
| 882092 | MJE711 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882093 | MJE711 | TRANSISTORES DE ENERGÍA PLÁSTICOS DEL SILICIO COMPLEMENTARIO | Central Semiconductor |
| 882094 | MJE712 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882095 | MJE712 | TRANSISTORES DE ENERGÍA PLÁSTICOS DEL SILICIO COMPLEMENTARIO | Central Semiconductor |
| 882096 | MJE720 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882097 | MJE720 | TRANSISTORES DE ENERGÍA PLÁSTICOS DEL SILICIO COMPLEMENTARIO | Central Semiconductor |
| 882098 | MJE721 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882099 | MJE721 | TRANSISTORES DE ENERGÍA PLÁSTICOS DEL SILICIO COMPLEMENTARIO | Central Semiconductor |
| 882100 | MJE722 | Fines generales Plomados Del Transistor De Energía | Central Semiconductor |
| 882101 | MJE800 | Transistor Epitaxial De Darlington Del Silicio de NPN | Fairchild Semiconductor |
| 882102 | MJE800 | SILICIO COMPLEMENTARIO DE 4,0 DEL AMPERIO DARLINGTON TRANSISTORES DE ENERGÍA 40 VATIOS 50 VATIOS | Motorola |
| 882103 | MJE800 | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882104 | MJE800 | Energía  60V NPND | ON Semiconductor |
| 882105 | MJE800 | 60 V, 5 A, de silicio epitaxial transistor NPN Darlington | Samsung Electronic |
| 882106 | MJE800STU | Transistor Epitaxial De Darlington Del Silicio de NPN | Fairchild Semiconductor |
| 882107 | MJE800T | ENERGÍA TRANSISTORS(4.0A, 60-80v, 40w) | MOSPEC Semiconductor |
| 882108 | MJE800T | SILICIO COMPLEMENTARIO DE 4,0 DEL AMPERIO DARLINGTON TRANSISTORES DE ENERGÍA 40 VATIOS 50 VATIOS | Motorola |
| 882109 | MJE800T | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882110 | MJE801 | Transistor Epitaxial De Darlington Del Silicio de NPN | Fairchild Semiconductor |
| 882111 | MJE801 | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882112 | MJE801 | 60 V, 5 A, de silicio epitaxial transistor NPN Darlington | Samsung Electronic |
| 882113 | MJE801STU | Transistor Epitaxial De Darlington Del Silicio de NPN | Fairchild Semiconductor |
| 882114 | MJE801T | ENERGÍA TRANSISTORS(4.0A, 60-80v, 40w) | MOSPEC Semiconductor |
| 882115 | MJE801T | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882116 | MJE802 | TRANSISTOR DE LA ENERGÍA DARLINGTON DEL SILICIO NPN | ST Microelectronics |
| 882117 | MJE802 | TRANSISTORES DE LA ENERGÍA DARLINGTON DEL SILICIO NPN | SGS Thomson Microelectronics |
| 882118 | MJE802 | SILICIO COMPLEMENTARIO DE 4,0 DEL AMPERIO DARLINGTON TRANSISTORES DE ENERGÍA 40 VATIOS 50 VATIOS | Motorola |
| 882119 | MJE802 | Transistor De Energía Plomado Darlington | Central Semiconductor |
| 882120 | MJE802 | Transistor Epitaxial De Darlington Del Silicio de NPN | Fairchild Semiconductor |
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