Nr. | Teilname | Beschreibung | Hersteller |
315281 | CM100BU-12H | Vier IGBTMOD 100 Volt Amperes/600 | Powerex Power Semiconductors |
315282 | CM100DU-12F | IGBT Module: 600V | Mitsubishi Electric Corporation |
315283 | CM100DU-12F | Doppel-IGBTMOD.?00 Amperes/600 Volt Des Graben-Gatter-Design- | Powerex Power Semiconductors |
315284 | CM100DU-12H | IGBT Module: 600V | Mitsubishi Electric Corporation |
315285 | CM100DU-12H | IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315286 | CM100DU-12H | Doppel-IGBTMOD 100 Volt Amperes/600 | Powerex Power Semiconductors |
315287 | CM100DU-24F | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315288 | CM100DU-24F | Doppel-IGBTMOD.?00 Amperes/1200 Volt Des Graben-Gatter-Design- | Powerex Power Semiconductors |
315289 | CM100DU-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315290 | CM100DU-24H | IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315291 | CM100DU-24H | Doppel-IGBTMOD 100 Volt Amperes/1200 | Powerex Power Semiconductors |
315292 | CM100DU-24NFH | MITSUBISHI IGBT MODULE | Mitsubishi Electric Corporation |
315293 | CM100DU-34KA | IGBT Modules:1700V | Mitsubishi Electric Corporation |
315294 | CM100DU-34KA | Doppel-IGBTMOD 100 Volt Amperes/1700 | Powerex Power Semiconductors |
315295 | CM100DUS-12F | HOHE ENERGIE SCHALTUNG GEBRAUCH | Mitsubishi Electric Corporation |
315296 | CM100DY | HOHE ENERGIE SCHALTUNG GEBRAUCH | Mitsubishi Electric Corporation |
315297 | CM100DY-12H | IGBT Module: 600V | Mitsubishi Electric Corporation |
315298 | CM100DY-12H | HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART IGBT MODULE | Mitsubishi Electric Corporation |
315299 | CM100DY-12H | Doppel-IGBTMOD 100 Volt Amperes/600 | Powerex Power Semiconductors |
315300 | CM100DY-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315301 | CM100DY-24H | HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART IGBT MODULE | Mitsubishi Electric Corporation |
315302 | CM100DY-24H | Doppel-IGBTMOD 100 Volt Amperes/1200 | Powerex Power Semiconductors |
315303 | CM100DY-24NF | HOHE ENERGIE SCHALTUNG GEBRAUCH | Mitsubishi Electric Corporation |
315304 | CM100DY-28H | Doppel-IGBTMOD 100 Volt Amperes/1400 | Powerex Power Semiconductors |
315305 | CM100E3U-12F | IGBT Module: 600V | Mitsubishi Electric Corporation |
315306 | CM100E3U-12H | IGBT Module: 600V | Mitsubishi Electric Corporation |
315307 | CM100E3U-12H | IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315308 | CM100E3U-12H | Volt Amperes/600 Des Zerhacker-IGBTMOD 100 | Powerex Power Semiconductors |
315309 | CM100E3U-24F | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315310 | CM100E3U-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315311 | CM100E3U-24H | IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315312 | CM100E3U-24H | Volt Amperes/1200 Des Zerhacker-IGBTMOD 100 | Powerex Power Semiconductors |
315313 | CM100HA-28H | Hochspannung IsolierModule Des GATTER-Zweipolige Transistor-(HVIGBT) | Mitsubishi Electric Corporation |
315314 | CM100TF-12H | IGBT Module: 600V | Mitsubishi Electric Corporation |
315315 | CM100TF-12H | MITSUBISHI IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315316 | CM100TF-12H | Six-IGBT IGBTMOD 100 Volt Amperes/600 | Powerex Power Semiconductors |
315317 | CM100TF-24 | HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315318 | CM100TF-24H | IGBT Modules:1200V | Mitsubishi Electric Corporation |
315319 | CM100TF-24H | MITSUBISHI IGBT MODUL-HOHE ENERGIE SCHALTUNG GEBRAUCH ISOLIERART | Mitsubishi Electric Corporation |
315320 | CM100TF-24H | Six-IGBT IGBTMOD 100 Volt Amperes/1200 | Powerex Power Semiconductors |
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