Nr. | Teilname | Beschreibung | Hersteller |
1163961 | STD17NF03 | N-CHANNEL 30V - 0.038OHM - 17A - DPAK/IPAK STRIPFET¢Â ENERGIE MOSFET | ST Microelectronics |
1163962 | STD17NF03 | N-CHANNEL 30V - 0.038OHM - 17A - DPAK/IPAK STRIPFET¢Â ENERGIE MOSFET | ST Microelectronics |
1163963 | STD17NF03L | N-CHANNEL 30V 0.038 ENERGIE MOSFET DES OHM-17A DPAK/IPAK STRIFET | ST Microelectronics |
1163964 | STD17NF03L | N-CHANNEL 30V 0.038 ENERGIE MOSFET DES OHM-17A DPAK/IPAK STRIFET | SGS Thomson Microelectronics |
1163965 | STD17NF03L-1 | N-CHANNEL 30V 0.038 ENERGIE MOSFET DES OHM-17A DPAK/IPAK STRIFET | ST Microelectronics |
1163966 | STD17NF03L-1 | N-CHANNEL 30V 0.038 ENERGIE MOSFET DES OHM-17A DPAK/IPAK STRIFET | SGS Thomson Microelectronics |
1163967 | STD17NF03LT4 | N-CHANNEL 30V 0.038 ENERGIE MOSFET DES OHM-17A DPAK/IPAK STRIFET | ST Microelectronics |
1163968 | STD17NF25 | N-Kanal 250 V, 0,14 Ohm, 17 A, DPAK STripFET (TM) II Power MOSFET | ST Microelectronics |
1163969 | STD1802 | NIEDERSPANNUNG FAST-SWITCHING NPN ENERGIE TRANSISTOR | ST Microelectronics |
1163970 | STD1802T4 | NIEDERSPANNUNG FAST-SWITCHING NPN ENERGIE TRANSISTOR | ST Microelectronics |
1163971 | STD1802T4-A | LOW VOLTAGE schnell schalt NPN-Leistungstransistors | ST Microelectronics |
1163972 | STD1805 | NIEDERSPANNUNG FAST-SWITCHING NPN ENERGIE TRANSISTOR | ST Microelectronics |
1163973 | STD1805T4 | NIEDERSPANNUNG FAST-SWITCHING NPN ENERGIE TRANSISTOR | ST Microelectronics |
1163974 | STD1862 | NPN Silikon-Transistor | AUK Corp |
1163975 | STD1862L | NPN Silikon-Transistor | AUK Corp |
1163976 | STD18N55M5 | N-Kanal 550 V, 0.150 Ohm typ., 16 A, MDmesh (TM) V-Leistungs-MOSFETs im DPAK-Gehäuse | ST Microelectronics |
1163977 | STD18N65M5 | N-Kanal 650 V, 0.198 Ohm typ. 15 A MDmesh (TM) V-Leistungs-MOSFETs im DPAK-Gehäuse | ST Microelectronics |
1163978 | STD18NF03L | N-Kanal-30 V, 0,038 Ohm typ., 17A STripFET (TM) II Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
1163979 | STD18NF25 | N-Kanal 250 V, 0,14 Ohm, 17 Eine niedrige Gate-Ladung STripFET (TM) II Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
1163980 | STD19NE06 | N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
1163981 | STD19NE06 | N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
1163982 | STD19NE06L | N-CHANNEL 60V - 0.038 OHM - 19A IPAK/DPAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
1163983 | STD19NE06L | N-CHANNEL 60V - 0.038 OHM - 19A - TO-251/TO-252 STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
1163984 | STD19NE06L | N - FÜHRUNG 60V - 0.038 Ohm - 19A - TO-251/TO-252 STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
1163985 | STD1HN60K3 | N-Kanal 600 V, 6,4 Ohm typ. 1,2 A, SuperMESH3 (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
1163986 | STD1HNC60 | N-CHANNEL 600V 4 OHM2A DPAK/IPAK POWERMESH II MOSFET | ST Microelectronics |
1163987 | STD1HNC60 | N-CHANNEL 600V 4 OHM2A DPAK/IPAK POWERMESH II MOSFET | SGS Thomson Microelectronics |
1163988 | STD1HNC60-1 | N-CHANNEL 600V 4 OHM2A DPAK/IPAK POWERMESH II MOSFET | ST Microelectronics |
1163989 | STD1HNC60-1 | N-CHANNEL 600V 4 OHM2A DPAK/IPAK POWERMESH II MOSFET | SGS Thomson Microelectronics |
1163990 | STD1HNC60T4 | N-CHANNEL 600V 4 OHM2A DPAK/IPAK POWERMESH II MOSFET | ST Microelectronics |
1163991 | STD1LNC60 | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET | ST Microelectronics |
1163992 | STD1LNC60 | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET | SGS Thomson Microelectronics |
1163993 | STD1LNC60-1 | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET | ST Microelectronics |
1163994 | STD1LNC60-1 | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET | SGS Thomson Microelectronics |
1163995 | STD1LNK60Z | N-CHANNEL 600V - 13 OHM - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET | ST Microelectronics |
1163996 | STD1LNK60Z-1 | N-CHANNEL 600V - 13 OHM - 0.8A TO-92/IPAK/SOT-223 ZENER-PROTECTED SUPERMESH MOSFET | ST Microelectronics |
1163997 | STD1NA60 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
1163998 | STD1NA60 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
1163999 | STD1NA60 | N - FÜHRUNG VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
1164000 | STD1NB50 | N-CHANNEL 500V -7.5 OHM-1.4A IPAK POWERMESH MOSFET | ST Microelectronics |
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